Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method

Patent metadata

Field	Value
Publication number	US-11243468-B2
Application number	US-201916564499-A
Country	US
Kind code	B2
Filing date	Sep 9, 2019
Priority date	Mar 10, 2017
Publication date	Feb 8, 2022
Grant date	Feb 8, 2022

Abstract

A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R1 and R2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R1 and R2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R1 and R2 bond.

First claim

The invention claimed is:

1. A patterned substrate production method comprising:
applying a composition for resist underlayer film formation directly or indirectly on an upper face side of a substrate to obtain a coating film;
heating the coating film to form a resist underlayer film;
forming a resist pattern on an upper face side of the resist underlayer film; and
carrying out etching using the resist pattern as a mask,
wherein
the composition for resist underlayer film formation, comprising:
a compound represented by formula (2-1); and
a solvent:
R B Z) m   (2-1)

wherein in the formula (2-1):
Z represents a partial structure represented by formula (1);
R B represents a group obtained by removing m hydrogen atoms from a substituted or unsubstituted arene having 6 to 20 carbon atoms, the arene being benzene, naphthalene, anthracene, phenanthrene, tetracene, pyrene, triphenylene, or perylene, or a group obtained by removing m hydrogen atoms from a substituted or unsubstituted heteroarene having 5 to 20 ring atoms, the heteroarene being pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, isoquinoline, quinazoline, cinnoline, phthalazine, quinoxaline, pyrrole, indole, furan, benzofuran, thiophene, benzothiophene, pyrazole, imidazole, benzimidazole, triazole, oxazole, benzoxazole, thiazole, benzothiazole, isothiazole, benzisothiazole, thiadiazole, isoxazole, or benzisoxazole; and
m is an integer of 2 to 20,
wherein in a case in which m is no less than 2, a plurality of Zs are identical or different,

wherein, in the formula (1):
X represents a group represented by formula (i), (ii), (iii) or (iv);
n1 and n2 are each independently an integer of 0 to 2;
Y and Y′ each independently represent a monovalent organic group having 1 to 20 carbon atoms;
n3 and n4 are each independently an integer of 0 to 8;
* and ** each denote a bonding site to R B in the formula (2-1); and
n5 is 1 and n6 is 0, or n5 is 0 and n6 is 1,
wherein in a case in which n3 is no less than 2, a plurality of Ys are identical or different, and in a case in which n4 is no less than 2, a plurality of Y's are identical or different,
and wherein n3+n5 is no greater than 8, and n4+n6 is no greater than 8,

wherein, in the formula (i): R 1 and R 2 each independently represent a hydrogen atom, a hydroxy group, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R 1 and R 2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R 1 and R 2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R 1 and R 2 bond,
in the formula (ii): R 3 and R 4 each independently represent a hydrogen atom, a hydroxy group or a monovalent organic group having 1 to 20 carbon atoms; or R 3 and R 4 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R 3 and R 4 bond,
in the formula (iii), R 5 represents a hydrogen atom, a hydroxy group or a monovalent organic group having 1 to 20 carbon atoms, and
in the formula (iv), R 6 represents a substituted or unsubstituted monovalent aliphatic hydrocarbon group, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms.

2. The patterned substrate production method according to claim 1 , wherein, in the formula (i): R 1 and R 2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R 1 and R 2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R 1 and R 2 bond.

3. The patterned substrate production method according to claim 1 , wherein the composition for resist underlayer film formation further comprises a crosslinkable compound other than the compound represented by the formula (2-1).

4. The patterned substrate production method according to claim 1 , wherein in the formula (2-1), m is an integer of 3 to 6.

5. The patterned substrate production method according to claim 1 , wherein in the formula (2-1), m is an integer of 3.

6. The patterned substrate production method according to claim 1 , wherein in the formula (1), n1 is 0, and n2 is 0.

7. The patterned substrate production method according to claim 1 , wherein R B represents a group obtained by removing m hydrogen atoms from a substituted or unsubstituted arene having 6 to 20 carbon atoms, and the arene is benzene or naphthalene.

8. The patterned substrate production method according to claim 1 , wherein R B represents a group obtained by removing m hydrogen atoms from a substituted or unsubstituted arene having 6 to 20 carbon atoms, and the arene is benzene.

9. The patterned substrate production method according to claim 1 , wherein R B represents a group obtained by removing m hydrogen atoms from a substituted or unsubstituted heteroarene having 5 to 20 ring atoms, and the heteroarene is triazine.

10. The patterned substrate production method according to claim 1 , wherein a content of the compound represented by the formula (2-1) with respect to a total solid content in the composition for resist underlayer film formation is from 70% to 100% by mass.

11. The patterned substrate production method according to claim 1 , wherein a content of the compound represented by the formula (2-1) with respect to a total solid content in the composition for resist underlayer film formation is from 85% to 100% by mass.

12. The patterned substrate production method according to claim 1 , wherein a content of the compound represented by the formula (2-1) in the composition for resist underlayer film formation is from 1% to 50% by mass.

13. The patterned substrate production method according to claim 1 , wherein a content of the compound represented by the formula (2-1) in the composition for resist underlayer film formation is from 3% to 30% by mass.

14. The patterned substrate production method according to claim 1 , wherein a content of the compound represented by the formula (2-1) in the composition for resist underlayer film formation is from 5% to 15% by mass.

15. The patterned substrate production method according to claim 1 , wherein the solvent is at least one selected from the group consisting of an alcohol solvent, a ketone solvent, an ether solvent, an ester solvent, and a nitrogen-containing solvent.

16. The patterned substrate production method according to claim 1 , wherein the composition for resist underlayer film formation further comprises an acid generating agent.

17. The patterned substrate production method according to claim 16 , an amount of the acid generating agent in the composition for resist underlayer film formation is 3 to 10 parts by mass with respect to 100 parts by mass of the compound represented by the formula (2-1).

Assignees

• Jsr Corp

Inventors

• Nosaka Naoya
• Wakamatsu Goji
• Abe Tsubasa
• Miura Ichihiro
• EHARA Kengo
• Nakatsu Hiroki
• Nakagawa Hiroki

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• C08G2261/3424

  non-conjugated, e.g. paracyclophanes or xylenes · CPC title

• G03F7/094 Primary

  Multilayer resist systems, e.g. planarising layers · CPC title

• G03F7/0395 Primary

  the macromolecular compound having a backbone with alicyclic moieties · CPC title

• C08G61/12 Primary

  Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule · CPC title