Inorganic film-forming composition for multilayer resist processes, and pattern-forming method
US-10090163-B2 · Oct 2, 2018 · US
US12516074B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12516074-B2 |
| Application number | US-202217696982-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 17, 2022 |
| Priority date | Sep 27, 2019 |
| Publication date | Jan 6, 2026 |
| Grant date | Jan 6, 2026 |
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A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R2 and R3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R2 and R3 bond, or R1 and either R2 or R3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R1 and either R2 or R3 bond.
Opening claim text (preview).
What is claimed is: 1 . A composition comprising: a metal compound comprising a ligand; and a solvent, wherein the ligand is derived from a compound represented by formula (1): wherein, in the formula (1), L represents a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R 2 and R 3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R 2 and R 3 bond, or R 1 and either R 2 or R 3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R 1 and either R 2 or R 3 bond. 2 . The composition according to claim 1 , wherein a metal atom in the metal compound belongs to period 3 to period 7 of group 2 to group 14 in periodic table. 3 . The composition according to claim 2 , wherein the metal atom belongs to group 4, group 9, or group 10 in the periodic table. 4 . The composition according to claim 1 , wherein R 1 represents a substituted or unsubstituted monovalent chain hydrocarbon group having 1 to 10 carbon atoms. 5 . The composition according to claim 1 , wherein R 2 and R 3 each represent a hydrogen atom. 6 . A film formed from the composition according to claim 1 . 7 . A method of forming a film, the method comprising applying the composition according to claim 1 directly or indirectly on a substrate. 8 . A method of forming a pattern, the method comprising: applying the composition according to claim 1 directly or indirectly on a substrate to form a resist underlayer film; applying an organic-resist-film-forming composition directly or indirectly on the resist underlayer film to form an organic resist film; exposing the organic resist film to a radioactive ray; and developing the organic resist film exposed. 9 . A method of forming an organic-underlayer-film reverse pattern, the method comprising: forming an organic underlayer film directly or indirectly on a substrate; forming a resist pattern directly or indirectly on the organic underlayer film; forming an organic-underlayer-film pattern by etching the organic underlayer using the resist pattern as a mask; forming an organic-underlayer-film-reverse-pattern-forming film on the organic-underlayer-film pattern by applying the composition according to claim 1 ; and removing the organic-underlayer-film pattern to form an organic-underlayer-film reverse pattern. 10 . A method of producing the composition according to claim 1 , the method comprising: mixing a metal alkoxide and a compound represented by formula (1) to obtain a mixture; adding water to the mixture to cause a hydrolytic condensation reaction of the metal alkoxide; and adding a solvent to the mixture to which the water is added: wherein, in the formula (1), L represents a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R 2 and R 3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R 2 and R 3 bond, or R 1 and either R 2 or R 3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R 1 and either R 2 or R 3 bond. 11 . A composition comprising: a metal compound comprising a ligand; and a solvent, wherein the ligand is derived from a compound represented by formula (1): wherein, in the formula (1), L represents an oxygen atom or a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each represent a hydrogen atom. 12 . The composition according to claim 11 , wherein a metal atom in the metal compound belongs to period 3 to period 7 of group 2 to group 14 in periodic table. 13 . The composition according to claim 12 , wherein the metal atom belongs to group 4, group 9, or group 10 in the periodic table. 14 . The composition according to claim 11 , wherein R 1 represents a substituted or unsubstituted monovalent chain hydrocarbon group having 1 to 10 carbon atoms. 15 . A film formed from the composition according to claim 11 . 16 . A method of forming a film, the method comprising applying the composition according to claim 11 directly or indirectly on a substrate. 17 . A method of forming a pattern, the method comprising: applying the composition according to claim 11 directly or indirectly on a substrate to form a resist underlayer film; applying an organic-resist-film-forming composition directly or indirectly on the resist underlayer film to form an organic resist film; exposing the organic resist film to a radioactive ray; and developing the organic resist film exposed. 18 . A method of forming an organic-underlayer-film reverse pattern, the method comprising: forming an organic underlayer film directly or indirectly on a substrate; forming a resist pattern directly or indirectly on the organic underlayer film; forming an organic-underlayer-film pattern by etching the organic underlayer using the resist pattern as a mask; forming an organic-underlayer-film-reverse-pattern-forming film on the organic-underlayer-film pattern by applying the composition according to claim 11 ; and removing the organic-underlayer-film pattern to form an organic-underlayer-film reverse pattern. 19 . A method of producing the composition according to claim 11 , the method comprising: mixing a metal alkoxide and a compound represented by formula (1) to obtain a mixture; adding water to the mixture to cause a hydrolytic condensation reaction of the metal alkoxide; and adding a solvent to the mixture to which the water is added: wherein, in the formula (1), L represents an oxygen atom or a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom.
Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title
having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title
Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title
Treatment after imagewise removal, e.g. baking · CPC title
characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title
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