Composition, film, method of forming film, method of forming pattern, method of forming organic-underlayer-film reverse pattern, and method of producing composition

US12516074B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12516074-B2
Application numberUS-202217696982-A
CountryUS
Kind codeB2
Filing dateMar 17, 2022
Priority dateSep 27, 2019
Publication dateJan 6, 2026
Grant dateJan 6, 2026

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R2 and R3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R2 and R3 bond, or R1 and either R2 or R3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R1 and either R2 or R3 bond.

First claim

Opening claim text (preview).

What is claimed is: 1 . A composition comprising: a metal compound comprising a ligand; and a solvent, wherein the ligand is derived from a compound represented by formula (1): wherein, in the formula (1), L represents a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R 2 and R 3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R 2 and R 3 bond, or R 1 and either R 2 or R 3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R 1 and either R 2 or R 3 bond. 2 . The composition according to claim 1 , wherein a metal atom in the metal compound belongs to period 3 to period 7 of group 2 to group 14 in periodic table. 3 . The composition according to claim 2 , wherein the metal atom belongs to group 4, group 9, or group 10 in the periodic table. 4 . The composition according to claim 1 , wherein R 1 represents a substituted or unsubstituted monovalent chain hydrocarbon group having 1 to 10 carbon atoms. 5 . The composition according to claim 1 , wherein R 2 and R 3 each represent a hydrogen atom. 6 . A film formed from the composition according to claim 1 . 7 . A method of forming a film, the method comprising applying the composition according to claim 1 directly or indirectly on a substrate. 8 . A method of forming a pattern, the method comprising: applying the composition according to claim 1 directly or indirectly on a substrate to form a resist underlayer film; applying an organic-resist-film-forming composition directly or indirectly on the resist underlayer film to form an organic resist film; exposing the organic resist film to a radioactive ray; and developing the organic resist film exposed. 9 . A method of forming an organic-underlayer-film reverse pattern, the method comprising: forming an organic underlayer film directly or indirectly on a substrate; forming a resist pattern directly or indirectly on the organic underlayer film; forming an organic-underlayer-film pattern by etching the organic underlayer using the resist pattern as a mask; forming an organic-underlayer-film-reverse-pattern-forming film on the organic-underlayer-film pattern by applying the composition according to claim 1 ; and removing the organic-underlayer-film pattern to form an organic-underlayer-film reverse pattern. 10 . A method of producing the composition according to claim 1 , the method comprising: mixing a metal alkoxide and a compound represented by formula (1) to obtain a mixture; adding water to the mixture to cause a hydrolytic condensation reaction of the metal alkoxide; and adding a solvent to the mixture to which the water is added: wherein, in the formula (1), L represents a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R 2 and R 3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R 2 and R 3 bond, or R 1 and either R 2 or R 3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R 1 and either R 2 or R 3 bond. 11 . A composition comprising: a metal compound comprising a ligand; and a solvent, wherein the ligand is derived from a compound represented by formula (1): wherein, in the formula (1), L represents an oxygen atom or a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each represent a hydrogen atom. 12 . The composition according to claim 11 , wherein a metal atom in the metal compound belongs to period 3 to period 7 of group 2 to group 14 in periodic table. 13 . The composition according to claim 12 , wherein the metal atom belongs to group 4, group 9, or group 10 in the periodic table. 14 . The composition according to claim 11 , wherein R 1 represents a substituted or unsubstituted monovalent chain hydrocarbon group having 1 to 10 carbon atoms. 15 . A film formed from the composition according to claim 11 . 16 . A method of forming a film, the method comprising applying the composition according to claim 11 directly or indirectly on a substrate. 17 . A method of forming a pattern, the method comprising: applying the composition according to claim 11 directly or indirectly on a substrate to form a resist underlayer film; applying an organic-resist-film-forming composition directly or indirectly on the resist underlayer film to form an organic resist film; exposing the organic resist film to a radioactive ray; and developing the organic resist film exposed. 18 . A method of forming an organic-underlayer-film reverse pattern, the method comprising: forming an organic underlayer film directly or indirectly on a substrate; forming a resist pattern directly or indirectly on the organic underlayer film; forming an organic-underlayer-film pattern by etching the organic underlayer using the resist pattern as a mask; forming an organic-underlayer-film-reverse-pattern-forming film on the organic-underlayer-film pattern by applying the composition according to claim 11 ; and removing the organic-underlayer-film pattern to form an organic-underlayer-film reverse pattern. 19 . A method of producing the composition according to claim 11 , the method comprising: mixing a metal alkoxide and a compound represented by formula (1) to obtain a mixture; adding water to the mixture to cause a hydrolytic condensation reaction of the metal alkoxide; and adding a solvent to the mixture to which the water is added: wherein, in the formula (1), L represents an oxygen atom or a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom.

Assignees

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Classifications

  • Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

  • having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

  • Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

  • Treatment after imagewise removal, e.g. baking · CPC title

  • characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

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Frequently asked questions

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What does patent US12516074B2 cover?
A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydroc…
Who is the assignee on this patent?
Jsr Corp
What technology area does this patent fall under?
Primary CPC classification G03F7/094. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 06 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).