Semiconductor device

Patent metadata

Field	Value
Publication number	US-12512418-B2
Application number	US-202017780362-A
Country	US
Kind code	B2
Filing date	Dec 4, 2020
Priority date	Dec 10, 2019
Publication date	Dec 30, 2025
Grant date	Dec 30, 2025

Abstract

A semiconductor device includes a semiconductor chip that has a main surface, a device region that is demarcated at the main surface, a differential amplifier that is formed in the device region and that amplifies and outputs a differential signal input to the differential amplifier, an insulation layer that covers the device region on the main surface, and a shield electrode that is incorporated in the insulation layer such as to conceal the device region in a plan view and that is fixed to a ground potential.

First claim

The invention claimed is:

1 . A semiconductor device comprising:
a semiconductor chip that has a main surface; a device region that is demarcated at the main surface; an amplifier that is formed in the device region and that amplifies and outputs a differential signal input into the amplifier; a multilayer wiring layer in which interlayer insulation layers and wiring layers are alternately laminated, wherein
the multilayer wiring layer covers the device region on the main surface,
the multilayer wiring layer includes an uppermost wiring layer of the wiring layers that is arranged on an uppermost insulation layer of the interlayer insulation layers, and
the multilayer wiring layer has a ground terminal to be fixed to a ground potential;
a shield electrode that is incorporated in the multilayer wiring layer as a part of the uppermost wiring layer so as to be integrally formed with the ground terminal and conceal the device region in a plan view; and a protective layer that covers the shield electrode and that has a pad opening that exposes a part of the ground terminal.

2 . The semiconductor device according to claim 1 , wherein the protective layer includes at least either one of an inorganic insulation film and an organic insulation film.

3 . The semiconductor device according to claim 1 , wherein the shield electrode includes a plurality of through-holes.

4 . The semiconductor device according to claim 3 , wherein each of the through-holes has a size smaller than a wavelength of an electromagnetic wave that is to be intercepted.

5 . The semiconductor device according to claim 3 , wherein the through-holes are arranged in a staggered pattern in a plan view, or in a matrix pattern in a plan view, or in a concentric circle pattern in a plan view.

6 . The semiconductor device according to claim 1 , wherein the shield electrode includes an Al-based metal film.

7 . The semiconductor device according to claim 1 , wherein
the amplifier is a differential amplifier, and the signal input into the differential amplifier is a differential signal.

8 . The semiconductor device according to claim 7 , wherein
the device region includes an input region, an amplification region, and an output region, the differential amplifier includes an input circuit that is formed in the input region and that transforms the differential signal into a differential current, an amplifier circuit that is formed in the amplification region and that amplifies the differential current and generates an amplification current, and an output circuit that is formed in the output region and that generates an output current according to the amplification current, and the shield electrode conceals the input region.

9 . The semiconductor device according to claim 8 , wherein the shield electrode conceals the input region, the amplification region, and the output region.

10 . The semiconductor device according to claim 8 , wherein
the input circuit includes a differential circuit including a pair of differential transistors forming a differential connection, the amplifier circuit includes a current return circuit that forms a cascode connection with the differential circuit and that includes a pair of bias transistors forming a folded cascode circuit with the differential circuit, and the output circuit includes a push-pull circuit including a pair of output transistors forming a push-pull connection.

11 . The semiconductor device according to claim 10 , wherein
the amplifier circuit includes a class-AB control circuit that is connected to the current return circuit and that generates a class-AB control signal according to the amplification current generated by the current return circuit, and the push-pull circuit is connected to the class-AB control circuit, and generates the output current according to the amplification current in response to the class-AB control signal.

12 . The semiconductor device according to claim 10 , wherein
the device region includes a constant current region, the differential amplifier includes a constant current circuit that is formed in the constant current region and that generates a constant current, the differential circuit of the input circuit is connected to the constant current circuit, and the shield electrode covers the constant current region.

13 . The semiconductor device according to claim 12 , wherein the constant current circuit includes a current mirror circuit.

14 . A semiconductor device comprising:
a semiconductor chip that has a main surface; a constant current region that is demarcated at the main surface; an input region that is demarcated at the main surface; a constant current circuit that is formed in the constant current region and that generates a constant current; a differential circuit that is formed in the input region, that is electrically connected to the constant current circuit, and that transforms a differential signal input to the differential circuit into a differential current; and a shield electrode that is arranged on the main surface such as to conceal at least either one of the input region and the constant current region in a plan view and that is fixed to a ground potential.

15 . The semiconductor device according to claim 14 , wherein
the constant current circuit includes a current mirror circuit, and the differential circuit includes a pair of differential transistors forming a differential connection.

16 . The semiconductor device according to claim 14 , further comprising:
an insulation layer that covers the input region and the constant current region on the main surface; wherein the shield electrode is incorporated in the insulation layer.

17 . A semiconductor device comprising:
a semiconductor chip that has a main surface; a device region that is demarcated at the main surface, the device region including an input region, an amplification region, and an output region; a differential amplifier that is formed in the device region and that amplifies and outputs a differential signal input into the differential amplifier, the differential amplifier including an input circuit that is formed in the input region and that transforms the differential signal into a differential current, an amplifier circuit that is formed in the amplification region and that amplifies the differential current and generates an amplification current, and an output circuit that is formed in the output region and that generates an output current according to the amplification current; and a shield electrode that is arranged on the main surface such as to conceal the input region of the device region in a plan view and that is fixed to a ground potential; wherein the input circuit includes a differential circuit including a pair of differential transistors forming a differential connection, the amplifier circuit includes a current return circuit that forms a cascode connection with the differential circuit and that includes a pair of bias transistors forming a folded cascode circuit with the differential circuit, and the output circuit includes a push-pull circuit including a pair of output transistors forming a push-pull connection.

18 . The semiconductor device according to claim 17 , wherein
the amplifier circuit includes a class-AB control circuit that is connected to the current return circuit and that generates a class-AB control signal according to the amplification current generated by the current return circuit, and the push-pull circuit is connected t

Assignees

• Rohm Co Ltd

Inventors

• Yoshii Yusuke
• Inoue Yuki
• Makimoto Hiroyuki

Classifications

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W70/465

  Bumps or wires · CPC title

• H10W70/417

  Bonding materials between chips and die pads · CPC title

• H10W20/423

  Shielding layers · CPC title

• H10W42/20 Primary

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title