Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US-2015316941-A1 · Nov 5, 2015 · US
Temperature control device and substrate processing apparatus
US12512339B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12512339-B2 |
| Application number | US-202217828521-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 31, 2022 |
| Priority date | Jun 2, 2021 |
| Publication date | Dec 30, 2025 |
| Grant date | Dec 30, 2025 |
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Abstract
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A temperature control device includes a first tank that stores a first heat medium; a second tank that stores a second heat medium having a temperature different from a temperature of the first heat medium, and a first communication pipe configured to connect a position where an upper limit level of a height of a liquid level is located in an interior of the first tank and a position where a lower limit level of a height of a liquid level is located in an interior of the second tank.
First claim
Opening claim text (preview).
What is claimed is: 1 . A temperature control device comprising: a first tank that stores a first heat medium; a second tank that stores a second heat medium having a temperature different from a temperature of the first heat medium; and a first communication pipe configured to connect a first position of the first tank and a second position of the second tank which is lower than the first position, and to be a flow path through which the first heat medium flows to the second tank and the second heat medium flows to the first tank according to a level difference between the first heat medium and the second heat medium, wherein each of the interiors of the first tank and the second tank includes a liquid portion and a gas portion, and the temperature control device further comprises: a second communication pipe formed to communicate the gas portion in the interior of the first tank and the gas portion in the interior of the second tank with each other. 2 . The temperature control device of Claim 1 , wherein the second communication pipe is provided at a position higher than an upper limit level of a height of a liquid level in each of the first tank and the second tank. 3 . The temperature control device of claim 2 , wherein the second communication pipe is provided between a ceiling surface side of the first tank and a ceiling surface side of the second tank. 4 . A substrate processing apparatus comprising: a process container; a stage provided inside the process container and configured to place a substrate thereon; a first temperature controller configured to supply a first heat medium from a first tank that stores the first heat medium to a flow path provided inside the stage via a first pipe; a second temperature controller configured to supply a second heat medium having a temperature different from a temperature of the first heat medium from a second tank that stores the second heat medium to the flow path via a second pipe; and a first communication pipe configured to connect a first position of the first tank and a second position of the second tank which is lower than the first position, and to be a flow path through which the first heat medium flows to the second tank and the second heat medium flows to the first tank according to a level difference between the first heat medium and the second heat medium. 5 . The substrate processing apparatus of claim 4 , wherein each of the interiors of the first tank and the second tank includes a liquid portion and a gas portion, and the substrate processing apparatus further comprises: a second communication pipe formed to communicate the gas portion in the interior of the first tank and the gas portion in the interior of the second tank with each other. 6 . The substrate processing apparatus of claim 5 , wherein the second communication pipe is provided at a position higher than an upper limit level of a height of a liquid level in each of the first tank and the second tank. 7 . The substrate processing apparatus of claim 6 , wherein the second communication pipe is provided between a ceiling surface side of the first tank and a ceiling surface side of the second tank.
Assignees
Inventors
Classifications
for drying etching · CPC title
- H10P72/0434Primary
mainly by convection · CPC title
for liquids (G05D23/1393 takes precedence) · CPC title
- H01J37/32724Primary
Temperature · CPC title
Etching · CPC title
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Frequently asked questions
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- What does patent US12512339B2 cover?
- A temperature control device includes a first tank that stores a first heat medium; a second tank that stores a second heat medium having a temperature different from a temperature of the first heat medium, and a first communication pipe configured to connect a position where an upper limit level of a height of a liquid level is located in an interior of the first tank and a position where a lo…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P72/0434. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 30 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).