Low loss tangent dielectric based on spinel-structured oxide

US12512232B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12512232-B2
Application numberUS-202117646281-A
CountryUS
Kind codeB2
Filing dateDec 28, 2021
Priority dateDec 29, 2020
Publication dateDec 30, 2025
Grant dateDec 30, 2025

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Abstract

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Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O—Al 2 O 3 —TiO 2 system comprising an aluminate comprising one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure. The low loss dielectric material additionally comprises one or more of: a titanate comprising the one of Co or Ni crystallized in a spinel structure, an aluminum oxide and a titanium oxide crystallized in a rutile structure.

First claim

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What is claimed is: 1 . A low loss dielectric material for radio frequency applications, comprising: an aluminate including one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure; and a titanate including one of Co or Ni crystallized in a spinel structure, wherein the low loss dielectric material has a loss tangent less than 0.0001, a dielectric constant of 8-15 and a temperature coefficient of resonant frequency having a magnitude less than 20 ppm/° C. 2 . The low loss dielectric material of claim 1 , wherein the aluminate comprises NiAl 2 O 4 and the titanate comprises Ni 2 TiO 4 . 3 . The low loss dielectric material of claim 2 , wherein the NiAl 2 O 4 and the Ni 2 TiO 4 form a solid solution including Ni 1+x Al 2-2x Ti x O 4 , wherein x is greater than 0 and less than or equal to 0.5. 4 . The low loss dielectric material of claim 1 , further comprising one or both of NiTiO 3 and Ni 5 TiO 7 . 5 . The low loss dielectric material of claim 1 , wherein the aluminate comprises CoAl 2 O 4 and the titanate comprises includes Co 2 TiO 4 . 6 . The low loss dielectric material of claim 5 , wherein the CoAl 2 O 4 and the Co 2 TiO 4 form a solid solution including Co 1+x Al 2-2x Ti x O 4 , where x is greater than 0 and less than or equal to 0.5. 7 . The low loss dielectric material of claim 5 , further comprising CoTi 2 O 5 . 8 . The low loss dielectric material of claim 1 , wherein one or both of the aluminate and the titanate further comprise zinc. 9 . The low loss dielectric material of claim 8 , wherein the aluminate comprises (Zn 1-y Co y )Al 2 O 4 and the titanate comprises (Zn 1-z Co z ) 2 TiO 4 , and each of y and z is greater than zero and less than 1. 10 . The low loss dielectric material of claim 9 , wherein the (Zn 1-y Co y )Al 2 O 4 and the (Zn 1-z Co z ) 2 TiO 4 form a solid solution including (Zn 1-y Co y ) 1+x Al 2-2x Ti x O 4 , and x is greater than 0 and less than 0.5. 11 . The low loss dielectric material of claim 8 , wherein the aluminate comprises (Zn 1-y Ni y )Al 2 O 4 and the titanate comprises (Zn 1-z Ni z ) 2 TiO 4 , and each of y and z is greater than zero and less than 1. 12 . The low loss dielectric material of claim 11 , wherein the (Zn 1-y Ni y )Al 2 O 4 and the (Zn 1-z Ni z ) 2 TiO 4 , form a solid solution including (Zn 1-y Ni y ) 1+x Al 2-2x Ti x O 4 , and x is greater than 0 and less than 0.5. 13 . A radiofrequency component comprising: a ceramic disk formed of a low loss dielectric material, the low loss dielectric material including an aluminate including one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure, and a titanate including one of Co or Ni crystallized in a spinel structure. 14 . The radiofrequency component of claim 13 , wherein the radiofrequency component comprises one or more of a co-axial resonator, a dielectric filter, an isolator and a circulator. 15 . The radiofrequency component of claim 14 , wherein the low loss dielectric material has a loss tangent less than 0.0001, a dielectric constant of 8-15 and a temperature coefficient of resonant frequency having a magnitude less than 20 ppm/° C. 16 . The radiofrequency component of claim 15 , wherein the aluminate includes one of NiAl 2 O 4 and CoAl 2 O 4 , and the titanate includes one of Ni 2 TiO 4 and Co 2 TiO 4 . 17 . The radiofrequency component of claim 15 , wherein the aluminate and the titanate form a solid solution. 18 . A method of manufacturing a component for a radio frequency device, the method comprising: mixing component oxide powders to form a mixed powder; calcining the mixed powder; forming the calcined mixed powder into a ceramic disk; and sintering the ceramic disk, thereby forming the component formed of a low loss dielectric material, the low loss dielectric material including an aluminate including one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure, and a titanate including one of Co or Ni crystallized in a spinel structure. 19 . The method of claim 18 , wherein the component is selected from the group consisting of a filter, an isolator, a circulator and a resonator. 20 . The method of claim 19 , wherein the low loss dielectric material has a loss tangent less than 0.0001, a dielectric constant of 8-15 and a temperature coefficient of resonant frequency having a magnitude less than 20 ppm/° C.

Assignees

Inventors

Classifications

  • Aluminium oxide; Aluminium hydroxide; Aluminates · CPC title

  • Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4 · CPC title

  • Oxides (H01F1/36 and H01F1/38 take precedence) · CPC title

  • Three-dimensional structures · CPC title

  • Isolators · CPC title

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What does patent US12512232B2 cover?
Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O—Al 2 O 3 —TiO 2 system comprising an aluminate comprising one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure. The low loss dielectric material additionally …
Who is the assignee on this patent?
Skyworks Solutions Inc
What technology area does this patent fall under?
Primary CPC classification H01B3/002. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 30 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).