Substrates for optoelectronic devices and methods of manufacturing same

Patent metadata

Field	Value
Publication number	US-12509798-B2
Application number	US-202118041554-A
Country	US
Kind code	B2
Filing date	Aug 19, 2021
Priority date	Aug 21, 2020
Publication date	Dec 30, 2025
Grant date	Dec 30, 2025

Abstract

There is described a method of manufacturing a substrate for an optoelectronic device. The method has the steps of: supporting a first layer of a first crystalline material on a second layer of a second crystalline material different from said first crystalline material thereby exposing crystalline defects at a surface of said first layer; etching said first layer using first etching conditions, at least some of said crystalline defects expanding into pores running from said surface of the first layer towards said second layer; and heating said first and second layers up to a first temperature for a first period of time within a given environment, said heating transforming said pores into nanovoids attracting at least some of said crystalline defects away from said surface. In some embodiments, the method has a step of reheating the layers or a step of forming a pore containing region within the first layer.

First claim

What is claimed is:

1 . A method of manufacturing a substrate for an optoelectronic device, the method comprising:
supporting a first layer of a first crystalline material on a second layer of a second crystalline material being different from said first crystalline material thereby exposing crystalline defects at a surface of said first layer; etching said first layer using first etching conditions, said etching electrically interacting with at least some of said crystalline defects, said electrically interacting resulting in said crystalline defects expanding into pores running from said surface of the first layer towards said second layer, said pores extending within a volume of said first layer; and heating said first and second layers up to a first temperature for a first period of time within a given environment, said heating transforming said pores into nanovoids attracting at least some of said crystalline defects away from said surface.

2 . The method of claim 1 further comprising cooling down said first and second layers and reheating said first and second layers up to a second temperature for a second period of time.

3 . The method of claim 2 wherein said second temperature is greater than said first temperature.

4 . The method of claim 3 wherein said first temperature is at least 550° C. and said second temperature is at least 700° C.

5 . The method of claim 2 wherein said second period of time is greater than said first period of time.

6 . The method of claim 2 further comprising, prior to said reheating, re-etching said first layer using second etching conditions.

7 . The method of claim 1 wherein said supporting comprises forming a pore containing region within said first layer away from said surface, the pore containing region having, upon said etching, a density of crystalline defects expanding into pores being greater than elsewhere within the first layer thereby concealing, upon said heating, the nanovoids within said pore containing region and defining a nanovoid-free region between said pore containing region and said surface.

8 . The method of claim 7 wherein said pore containing region is made of an alloy comprising both the first and second crystalline materials.

9 . The method of claim 8 wherein said forming comprises growing said alloy upon said second layer thereby forming said pore containing region, and then growing said first crystalline material on said pore containing region.

10 . The method of claim 7 wherein the pore containing region has a doping level being greater than a doping level of elsewhere within the first layer.

11 . The method of claim 10 wherein said forming comprises growing said first crystalline material with a first doping level upon said second layer thereby forming said pore containing region, and then growing said first crystalline material with a second doping level being lower than the first doping level on said pore containing region thereby forming said nanovoid-free region.

12 . The method of claim 10 wherein said forming comprises growing said first crystalline material with a first doping level upon said second layer, and then implanting dopants within a region of said first layer thereby increasing a doping level of said region from the first doping level to the second doping level, said region acting as said pore containing region after said implanting.

13 . The method of claim 7 wherein the pore containing region has one of a n-type dopant and a p-type dopant, the nanovoid-free region having the other one of the n-type dopant and the p-type dopant.

14 . The method of claim 1 wherein said etching comprises a first step of etching the first layer with first etching conditions and then a second step of etching the etched first layer with second etching conditions, the second step of etching forming a pore containing region within said first layer away from said surface, the pore containing region having, upon said steps of etching, a density of crystalline defects expanding into pores being greater than elsewhere within the first layer thereby concealing, upon said heating, the nanovoids within said pore containing region and defining a nanovoid-free region between said pore containing region and said surface.

15 . The method of claim 14 wherein the first etching conditions involve a first electrolyte solution and wherein the second etching conditions involve a second electrolyte solution being more chemically active than the first electrolyte solution.

16 . The method of claim 1 further comprising, prior to said etching, implanting dopants uniformly within the first layer, said implanted dopants being attracted proximate to said crystalline defects, activating the implanted dopants thereby transforming at least some of the crystalline defects into nanochannels running from the surface of the first layer down to the second layer, wherein said step of etching is performed through said first layer via said nanochannels, at least some of the crystalline defects expanding into pores running within the second layer and away from the first layer, said heating transforming said pores of said second layer into nanovoids attracting at least some of said crystalline defects within said second layer and away from said first layer, thereby defining a nanovoid-free region within first second layer.

17 . The method of claim 1 wherein said pores reach a volume of said second layer.

18 . The method of claim 1 wherein said pores extend within a volume of said second layer.

Assignees

• Socpra Sciences Et Genie Sec

Inventors

• Bioud Youcef Ataellah
• Boucherif Abderraouf
• Arès Richard

Classifications

• H10P14/3256

  Microstructure · CPC title

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• C30B33/02

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title

• C30B31/22

  by ion-implantation · CPC title