Anodized film substrate base, anodized film substrate part having same, anodized film-based interposer having same, and semiconductor package having same

Patent metadata

Field	Value
Publication number	US-12506091-B2
Application number	US-202118015711-A
Country	US
Kind code	B2
Filing date	Jul 27, 2021
Priority date	Jul 29, 2020
Publication date	Dec 23, 2025
Grant date	Dec 23, 2025

Abstract

The present invention relates to an anodized film substrate base made of an anodized oxide film, an anodized film substrate part including a vertical conductive part provided inside the anodized film substrate base, an anodized film-based interposer having same, and a semiconductor package having same.

First claim

What is claimed is:

1 . A semiconductor package, comprising:
a semiconductor chip; and an anodized film-based interposer on which the semiconductor chip is mounted, wherein the anodized film-based interposer comprises: an anodized film substrate made of an anodized film and comprising a vertical conductive part provided therein; and a redistribution part, wherein the anodized film comprises a porous layer having a pore formed therein and a barrier layer sealing one end of the pore, and wherein the redistribution part is provided on an upper surface of the barrier layer.

2 . The semiconductor package of claim 1 , wherein a package substrate is provided under the anodized film-based interposer, and
the anodized film-based interposer is interposed between the semiconductor chip and the package substrate.

3 . An anodized film-based interposer, comprising:
an anodized film substrate, comprising a vertical conductive part provided in an anodized film substrate base made of an anodized film; and a redistribution part, provided on at least one surface of the anodized film substrate, wherein the anodized film comprises a porous layer having a pore formed therein and a barrier layer sealing one end of the pore, and wherein the redistribution part is provided on an upper surface of the barrier layer.

4 . An anodized film substrate, comprising:
an anodized film substrate base, made of an anodized film and having a pore formed therein during an anodizing; a vertical conductive part, provided in the anodized film substrate base; and a barrier layer formed during the anodizing on at least one surface of the anodized film substrate base to seal one end of the pore.

5 . The anodized film substrate of claim 4 , further comprising a support substrate provided on at least one surface of the anodized film substrate base.

6 . The anodized film substrate of claim 4 , wherein the vertical conductive part is provided in a through hole formed by etching the anodized film to have a larger size than a pore formed during anodizing.

7 . The anodized film substrate of claim 4 , wherein the vertical conductive part is provided in a pore formed during anodizing.

8 . The anodized film substrate of claim 6 , further comprising a clearance formed between the through hole and the vertical conductive part.

9 . The anodized film substrate of claim 4 , wherein the vertical conductive part comprises a main conductive part and a buffer part being in contact with the main conductive part.

10 . The anodized film substrate of claim 4 , further comprising a via-connection pad formed on the anodized film substrate base and being in contact with the vertical conductive part,
wherein one of the via-connection pads is connected to a plurality of the vertical conductive parts.

11 . The anodized film substrate of claim 4 , further comprising a depression formed by removing at least a portion of the anodized film.

12 . An anodized film substrate base, made of an anodized film formed by anodizing a base metal and then removing the base metal, the anodized film substrate base comprising a through hole formed by etching the anodized film to have a larger size than a pore formed during the anodizing,
wherein a sealed end of the pore is unsealed by removing a barrier layer formed on at least one surface side of the anodized film substrate base during the anodizing.

13 . The anodized film substrate base of claim 12 , further comprising a depression formed by removing at least a portion of the anodized film.

14 . The anodized film substrate base of claim 12 , wherein the through hole has a polygonal cross-section.

15 . An anodized film substrate base, made of an anodized film formed by anodizing a base metal and then removing the base metal, the anodized film substrate base comprising:
a through hole formed by etching the anodized film to have a larger size than a pore formed during the anodizing; and a barrier layer formed on at least one surface side of the anodized film substrate base during the anodizing to seal one end of the pore.

16 . The anodized film substrate base of claim 12 , further comprising a support substrate provided on at least one surface of the anodized film substrate base.

17 . The anodized film substrate base of claim 15 , further comprising a depression formed by removing at least a portion of the anodized film.

Assignees

• Point Engineering Co Ltd

Inventors

• Ahn Bum Mo
• Park Seung Ho
• Byun Sung Hyun

Classifications

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/28

  the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title