Substrate processing apparatus, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12505989-B2
Application number	US-202418596135-A
Country	US
Kind code	B2
Filing date	Mar 5, 2024
Priority date	Nov 30, 2010
Publication date	Dec 23, 2025
Grant date	Dec 23, 2025

Abstract

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel; a gas introduction port installed at an upper end of the reaction vessel; an electrode installed along an outer circumference of the reaction vessel; a baffle installed between the upper end of the reaction vessel and an upper end of the electrode with a gap between an outer circumference of the baffle and an inner circumference of the reaction vessel along the outer circumference of the baffle; a fixing part attached to an inner plane of the baffle and disposed inside the outer circumference of the baffle so as to fix the baffle to the upper end of the reaction vessel; and a gas exhaust pipe connected to the reaction vessel.

First claim

What is claimed is:

1 . A processing apparatus comprising:
a reaction vessel; a gas introduction port installed at an upper end of the reaction vessel; an electrode installed along an outer circumference of the reaction vessel; a baffle installed between the upper end of the reaction vessel and an upper end of the electrode with a gap between an outer circumference of the baffle and an inner circumference of the reaction vessel along the outer circumference of the baffle; a fixing part attached to an inner plane of the baffle and disposed inside the outer circumference of the baffle so as to fix the baffle to the upper end of the reaction vessel; and a gas exhaust pipe connected to the reaction vessel, wherein the baffle comprises an upper baffle facing a lower surface of the upper end of the reaction vessel and a lower baffle disposed between the upper baffle and the upper end of the electrode, and wherein the fixing part is attached to an inner plane of the upper baffle and an inner plane of the lower baffle so as to fix the upper baffle and the lower baffle to the upper end of the reaction vessel.

2 . The processing apparatus according to claim 1 , wherein the fixing part is inserted into a fixing hole formed in the baffle.

3 . The processing apparatus according to claim 1 , wherein the fixing part comprises a bolt inserted into a fixing hole formed in the baffle.

4 . The processing apparatus according to claim 3 , wherein the fixing part further comprises a collar of the fixing hole disposed between the baffle and the upper end of the reaction vessel.

5 . The processing apparatus according to claim 1 , further comprising a plurality of fixing parts comprising the fixing part.

6 . The processing apparatus according to claim 5 , wherein the plurality of fixing parts are disposed in a circumferential direction of the baffle at predetermined intervals.

7 . The processing apparatus according to claim 1 , wherein the baffle is free of a hole allowing a gas to flow therethrough.

8 . The processing apparatus according to claim 1 , wherein the baffle has a shape conforming to the inner circumference of the reaction vessel.

9 . The processing apparatus according to claim 1 , further comprising a radio frequency power supply configured to supply radio frequency power to the electrode to excite a gas introduced from the gas introduction port to the reaction vessel into a plasma state.

10 . The processing apparatus according to claim 1 , wherein the baffle is fixed to the upper end of the reaction vessel by only the fixing part.

11 . The processing apparatus according to claim 1 , wherein the outer circumference of the baffle is disposed without contacting the inner circumference of the reaction vessel.

12 . The processing apparatus according to claim 1 , wherein no fixing structure configured to fix the baffle to the upper end of the reaction vessel is attached to the outer circumference of the baffle.

13 . A method of manufacturing a semiconductor device using the processing apparatus of claim 1 , the method comprising:
(a) introducing a gas into the reaction vessel; (b) exciting the gas into a plasma state by the electrode to form a plasma-excited gas; and (c) forming the semiconductor device by supplying the plasma-excited gas to a substrate.

14 . A substrate processing method using the processing apparatus of claim 1 , the method comprising:
(a) introducing a gas into the reaction vessel; (b) exciting the gas into a plasma state by the electrode to form a plasma-excited gas; and (c) processing a substrate by supplying the plasma-excited gas to the substrate.

Assignees

• Kokusai Electric Corp

Inventors

• Yanai Hidehiro
• Hiyama Shin
• Kakuda Toru
• Shimada Toshiya
• Amano Tomihiro

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• G03F7/427

  using plasma means only · CPC title

• H01J37/32633

  Baffles · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title