Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-10763084-B2
Application number	US-201815873598-A
Country	US
Kind code	B2
Filing date	Jan 17, 2018
Priority date	Nov 30, 2010
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a reaction vessel having a tubular shape;
a cover installed at a first end of the reaction vessel;
a resonance coil wound on an outer circumference of the reaction vessel;
a first baffle installed between the cover and an upper end of the resonance coil with a first gap between an outer circumference of the first baffle and an inner circumference of the reaction vessel along the outer circumference of the first baffle;
a second baffle installed between the first baffle and the upper end of the resonance coil with a second gap between an outer circumference of the second baffle and the inner circumference of the reaction vessel along the outer circumference of the second baffle, wherein a lower surface of the second baffle is at a height that is higher than that of the upper end of the resonance coil;
a gas introduction port installed at the cover and having a conical shape with a diameter thereof increasing toward a lower surface of the cover; and
a gas exhaust pipe connected to the reaction vessel,
wherein the first baffle and the second baffle are free from a hole allowing a gas to flow therethrough.

2. The substrate processing apparatus according to claim 1 , further comprising a radio frequency power supply configured to supply radio frequency power to the resonance coil to excite a gas introduced from the gas introduction port to the reaction vessel into a plasma state.

3. The substrate processing apparatus according to claim 1 , wherein each of the outer circumference of the first baffle and the outer circumference of the second baffle is disposed without contacting the inner circumference of the reaction vessel.

4. The substrate processing apparatus according to claim 1 , wherein the first baffle and the second baffle have substantially a same shape.

5. The substrate processing apparatus according to claim 1 , wherein each of the first baffle and the second baffle has a shape conforming to the inner circumference of the reaction vessel.

6. The substrate processing apparatus according to claim 1 , wherein a distance between surfaces of the first baffle and the second baffle facing each other ranges from 30 mm to 50 mm.

7. The substrate processing apparatus according to claim 1 , wherein a distance between the outer circumference of the first baffle and the inner circumference of the reaction vessel ranges from 0.1 mm to 10 mm.

8. The substrate processing apparatus according to claim 1 , further comprising a gas supplying system configured to supply a gas containing at least one of argon gas and helium gas to the gas introduction port.

9. The substrate processing apparatus according to claim 1 , wherein a distance between the cover and a surface of the first baffle facing the cover is 5 mm or less.

10. The substrate processing apparatus according to claim 1 , wherein the first baffle and the second baffle are fixed to the cover by a bolt inserted into the cover, a first fixing hole formed in the first baffle and a second fixing hole formed in the second baffle.

Assignees

• Hitachi Int Electric Inc
• Kokusai Electric Corp

Inventors

• Yanai Hidehiro
• Hiyama Shin
• Kakuda Toru
• Shimada Toshiya
• Amano Tomihiro

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• H05H1/46

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title

• H01J37/32458 Primary

  Vessel · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title