Thin-film transistor and preparation method therefor, and display substrate and display panel

Patent metadata

Field	Value
Publication number	US-12501719-B2
Application number	US-202017905246-A
Country	US
Kind code	B2
Filing date	Mar 19, 2020
Priority date	Mar 19, 2020
Publication date	Dec 16, 2025
Grant date	Dec 16, 2025

Abstract

Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.

First claim

What is claimed is:

1 . A thin-film transistor, comprising:
a base substrate; an active layer arranged on the base substrate; and a source-drain electrode layer, which is arranged on a side, facing away from the base substrate, of the active layer, and comprises an electrode layer, a transition layer arranged between the active layer and the electrode layer, and a protective layer, wherein a material of the electrode layer comprises a first metal element, and a mass percentage of the first metal element in the electrode layer is less than 0.5 wt. %; the protective layer covers a surface of a side, facing away from the base substrate, of the electrode layer, and a side face of the electrode layer; a material of the protective layer is an oxide of the first metal element; an orthographic projection of the transition layer on the base substrate overlaps with an orthographic projection of the electrode layer on the base substrate.

2 . The thin-film transistor according to claim 1 , wherein the protective layer further covers a side face of the transition layer.

3 . The thin-film transistor according to claim 1 , wherein the electrode layer is made of an alloy material; and the alloy material comprises the first metal element.

4 . The thin-film transistor according to claim 3 , wherein the material of the electrode layer comprises a copper alloy.

5 . The thin-film transistor according to claim 4 , wherein the first metal element is an aluminum element; and the material of the protective layer comprises aluminum oxide.

6 . The thin-film transistor according to claim 4 , wherein the first metal element is a chromium element; and the material of the protective layer comprises chromium oxide.

7 . The thin-film transistor according to claim 1 , wherein a ratio of a thickness of the protective layer to a thickness of the electrode layer ranges from 1/20 to 1/200.

8 . The thin-film transistor according to claim 1 , wherein the active layer comprises: an undamaged layer close to the base substrate and a damaged layer far away from the base substrate;
wherein an orthographic projection of the damaged layer on the base substrate does not overlap with an orthographic projection of a channel region of the thin-film transistor on the base substrate.

9 . The thin-film transistor according to claim 8 , wherein the orthographic projection of the damaged layer on the base substrate is on two sides of the orthographic projection of the channel region of the thin-film transistor on the base substrate.

10 . A display substrate, comprising the thin-film transistor according to claim 1 .

11 . A display panel, comprising the display substrate according to claim 10 .

12 . A preparation method for the thin-film transistor according to claim 1 , comprising:
preparing and forming the active layer on the base substrate; sequentially depositing a transition layer and the electrode layer of the source-drain electrode layer on the active layer, wherein the electrode layer comprises the first metal element; patterning the transition layer and the electrode layer by a patterning process to form a pattern of the source-drain electrode layer; and oxidizing the source-drain electrode layer for forming a layer of an oxide film of the first metal element on a surface of the electrode layer.

13 . The preparation method according to claim 12 , wherein the electrode layer is made of a copper alloy, and the first metal element is aluminum or chromium;
wherein the oxidizing the source-drain electrode layer for forming the layer of the oxide film of the first metal element on the surface of the electrode layer specifically comprises: performing thermal annealing treatment on the electrode layer at an annealing temperature of higher than or equal to 300° C. for an annealing time of greater than or equal to 1 h under an atmosphere of air, for forming a layer of aluminum oxide film or chromium oxide film on the surface of the electrode layer.

14 . The preparation method according to claim 12 , wherein the sequentially depositing the transition layer and the electrode layer of the source-drain electrode layer on the active layer specifically comprises:
sequentially depositing the transition layer and the electrode layer by using a plasma sputtering deposition process while forming a damage layer on an upper surface of the active layer; wherein the patterning the transition layer and the electrode layer by the patterning process to form the pattern of the source-drain electrode layer specifically comprises:
etching the transition layer and the electrode layer by an etching solution for an etch time of greater than or equal to (EPD+A/B), wherein EPD is a time required for the transition layer and the electrode layer to be etched exactly, A is a depth of a damaged layer in the active layer, and B is an etching rate of the damaged layer in the active layer by the etching solution.

Assignees

• Fuzhou Boe Optoelectronics Tech Co Ltd
• Boe Technology Group Co Ltd
• Beijing Boe Technology Dev Co Ltd

Inventors

• Xue Dapeng
• Liu Zheng
• Hu hehe
• Wang Lizhong
• Dong Shuilang
• Yao Nianqi

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6314

  of a metallic layer · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title