Method of making mems microphone with an anchor

Patent metadata

Field	Value
Publication number	US-12495260-B2
Application number	US-202318156155-A
Country	US
Kind code	B2
Filing date	Jan 18, 2023
Priority date	Jan 25, 2022
Publication date	Dec 9, 2025
Grant date	Dec 9, 2025

Abstract

A method for manufacturing a microelectromechanical systems (MEMS) microphone comprises depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate, etching the substrate to define a cavity, releasing the membrane by removing at least the first sacrificial layer, and forming at least one anchor at the edge of the membrane.

First claim

What is claimed is:

1 . A method for manufacturing a microelectromechanical systems (MEMS) microphone, comprising:
depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate; etching the substrate to define a cavity; releasing the membrane by removing at least the first sacrificial layer; and forming at least one anchor at an edge of the membrane; depositing a second sacrificial layer on top of the deposited membrane, the first and second sacrificial layers forming a single sacrificial layer; dry etching the single sacrificial layer at the edge of the membrane; depositing a layer of polysilicon on the single sacrificial layer; and etching areas of the polysilicon layer such that there is at least one section of polysilicon layer remaining and at least one section of the single sacrificial layer is exposed.

2 . The method of claim 1 further comprising:
depositing a photoresist layer on the remaining polysilicon layer and exposed single sacrificial layer;
etching the photoresist layer to provide one or more etched areas and expose the single sacrificial layer;
removing the single sacrificial layer via the one or more etched areas to release the membrane; and
placing at least one anchor through the one or more etched areas such that the at least one anchor is in contact with the membrane.

3 . The method of claim 1 wherein removing the sacrificial layer comprises etching by vapor Hydrofluoric acid.

4 . The method of claim 1 wherein depositing the membrane on a sacrificial layer comprises:
depositing at least one layer of metal; and
depositing at least one layer of piezoelectric material, such that the layers of metal and piezoelectric material are alternated.

5 . A microelectromechanical systems (MEMS) microphone, comprising:
a substrate including at least one wall defining a cavity; a membrane supported by the at least one wall; and at least one anchor in contact with the membrane and the at least one wall, such that the membrane is only fixed to the at least one wall by the at least one anchor, wherein the anchor is formed from metal.

6 . The microelectromechanical systems microphone of claim 5 wherein the anchor is formed after the membrane has been released.

7 . The microelectromechanical systems microphone of claim 5 wherein the anchor is formed from at least one stopper.

8 . The microelectromechanical systems microphone of claim 7 wherein the microphone further comprises a cap wafer attached to the at least one stopper.

9 . The microelectromechanical systems microphone of claim 5 wherein the microphone comprises an additional one or more anchors.

10 . The microelectromechanical systems microphone of claim 5 wherein the anchor is formed by a material deposited after the membrane.

11 . The microelectromechanical systems microphone of claim 5 wherein the anchor comprises a photoresist layer.

12 . The microelectromechanical systems microphone of claim 5 wherein the anchor is formed at a low temperature.

13 . The microelectromechanical systems microphone of claim 5 wherein the anchor forms a ring around an edge of the membrane.

14 . The microelectromechanical systems microphone of claim 5 wherein the membrane has been released such that it has substantially no intrinsic stress.

15 . The microelectromechanical systems microphone of claim 5 , wherein the MEMS microphone is a piezoelectric MEMS microphone.

16 . The microelectromechanical systems microphone of claim 15 wherein the membrane comprises three electrodes, and two piezoelectric film layers.

17 . The microelectromechanical systems microphone of claim 5 wherein the MEMS microphone is a capacitive MEMS microphone.

18 . A method for manufacturing a microelectromechanical systems (MEMS) microphone, comprising:
depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate; etching the substrate to define a cavity; forming at least one anchor at an edge of the membrane; depositing a second layer of sacrificial layer on top of the deposited membrane, where the first and second sacrificial layers form a single sacrificial layer; dry etching the single sacrificial layer at the edge of the membrane to expose at least one section of the membrane; depositing a layer of polysilicon on the remaining single sacrificial layer; etching areas of the polysilicon layer such that there is at least one section of polysilicon layer remaining and at least one section of single sacrificial layer exposed; and removing the single sacrificial layer to release the membrane.

19 . The method of claim 2 wherein the method of forming at least one anchor further comprises depositing a material at least within the etched areas of the photoresist layer such that the material forms the at least one anchor at the edge of the membrane.

20 . The method of claim 18 further comprising:
bonding a cap wafer onto the at least one remaining section of polysilicon layer;
depositing a layer of material at least within the etched areas of the polysilicon layer such that the material forms the at least one anchor at the edge of the membrane; and
removing the cap wafer.

21 . The method of claim 18 further comprising bonding a wafer onto the at least one remaining section of polysilicon layer, wherein the wafer comprises a sound port and at least one stopper, where the at least one stopper is in contact with the membrane once the wafer is bonded to the at least one remaining section of polysilicon layer.

Assignees

• Skyworks Solutions Inc

Inventors

• Chen Guofeng
• Hui Yu

Classifications

• B81B3/0072

  For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers · CPC title

• B81C2203/0118

  Bonding a wafer on the substrate, i.e. where the cap consists of another wafer · CPC title

• B81C2201/0132

  Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title

• B81C2201/0105

  Sacrificial layer · CPC title

• B81B2203/0307

  Anchors · CPC title