Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-12490495-B2
Application number	US-202217589079-A
Country	US
Kind code	B2
Filing date	Jan 31, 2022
Priority date	Jun 11, 2021
Publication date	Dec 2, 2025
Grant date	Dec 2, 2025

Abstract

The present invention relates to a semiconductor device with improved reliability and a method for manufacturing the same. A semiconductor device according to the present invention may comprise: a substrate including a gate trench; a gate insulating layer formed on a surface of the gate trench; and silicon-doped metal nitride on the gate insulating layer, wherein the silicon-doped metal nitride has a silicon concentration of less than 1 at %.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a substrate including a feature; a void-free conductive layer disposed inside the feature; and a low work function material on the void-free conductive layer, wherein the void-free conductive layer includes silicon-doped metal nitride, wherein the low work function material includes an N-type impurity-doped polysilicon.

2 . The semiconductor device of claim 1 , wherein the silicon-doped metal nitride includes silicon-doped titanium nitride.

3 . The semiconductor device of claim 1 , wherein the silicon-doped metal nitride includes silicon at a concentration of less than 1 at % and greater than 0 at %.

4 . The semiconductor device of claim 1 , wherein the silicon-doped metal nitride is chlorine-free and crystalline.

5 . A semiconductor device, comprising:
a substrate including a gate trench; a gate insulating layer on a surface of the gate trench; silicon-doped metal nitride on the gate insulating layer; and a low work function material on the silicon-doped metal nitride, wherein the silicon-doped metal nitride includes silicon at concentration of less than 1 at %, wherein the low work function material includes an N-type impurity-doped polysilicon.

6 . The semiconductor device of claim 5 , wherein the silicon-doped metal nitride includes silicon-doped titanium nitride.

7 . The semiconductor device of claim 5 , wherein the low work function material has a lower work function than the silicon-doped metal nitride.

8 . The semiconductor device of claim 5 , wherein doped metal nitride includes silicon-doped titanium nitride.

9 . The semiconductor device of claim 5 , further including:
a low resistivity material on the silicon-doped metal nitride.

10 . The semiconductor device of claim 9 , wherein the low resistivity material includes tungsten.

11 . The semiconductor device of claim 5 , wherein the silicon-doped metal nitride is chlorine-free and crystalline.

12 . A semiconductor device, comprising:
a substrate including a first doped region, a second doped region, and a gate trench between the first and second doped regions; a gate insulating layer formed on a surface of the gate trench; a buried word line disposed inside the gate trench over the gate insulating layer; a bit line connected to the first doped region; and a capacitor connected to the second doped region, wherein the buried word line includes silicon-doped titanium nitride having silicon concentration of less than 1 at %.

13 . The semiconductor device of claim 12 , wherein the buried word line further includes a low work function material over the silicon-doped titanium nitride.

14 . The semiconductor device of claim 13 , wherein the low work function material has a lower work function than the silicon-doped titanium nitride.

15 . The semiconductor device of claim 13 ,
wherein the silicon-doped titanium nitride includes a first silicon-doped titanium nitride, wherein the low work function material includes a second silicon-doped titanium nitride, and wherein the second silicon-doped titanium nitride has lower work function than the first silicon-doped titanium nitride.

16 . The semiconductor device of claim 13 , wherein the low work function material includes an N-type impurity-doped polysilicon.

17 . The semiconductor device of claim 12 , further including:
a low resistivity material on the silicon-doped titanium nitride; and a low work function material on the low resistivity material.

18 . The semiconductor device of claim 17 , wherein the low resistivity material includes tungsten, and the low work function material includes an N-type impurity-doped polysilicon.

19 . The semiconductor device of claim 12 , wherein the silicon-doped titanium nitride is chlorine-free and crystalline.

Assignees

• Sk Hynix Inc

Inventors

• Kim Dong Soo
• Seo Jung Ho

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/4446

  Refractory-metal alloys · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10D64/513 Primary

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title