Non-intrusive method for 2D/3D mapping plasma parameters

Patent metadata

Field	Value
Publication number	US-12487182-B2
Application number	US-202318313958-A
Country	US
Kind code	B2
Filing date	May 8, 2023
Priority date	May 8, 2023
Publication date	Dec 2, 2025
Grant date	Dec 2, 2025

Abstract

A method of characterizing a plasma in a plasma processing chamber that includes: sustaining a plasma generated from a process gas in a plasma processing chamber; flowing a probe gas through the plasma processing chamber; obtaining spatially-resolved OES signals at a wavelength of an optical emission line of the probe gas within the plasma processing chamber, signal intensities of the spatially-resolved OES signals being correlated to a plasma parameter of the plasma, the plasma parameter having a spatial distribution within the plasma processing chamber; and based on the spatially-resolved OES signals, constructing a 3D map of OES signals by data fitting of the spatially-resolved OES signals with a computation model; and converting the 3D map of OES signals into a 3D map of the plasma parameter, the 3D map of the plasma parameter including information about the spatial distribution.

First claim

What is claimed is:

1 . A method of characterizing plasma in a plasma processing chamber, the method comprising:
sustaining a plasma generated from a process gas in the plasma processing chamber of a plasma processing system, the plasma processing system comprising a plasma optical emission spectroscopy (OES) system configured to measure optical emissions from the plasma, the plasma processing chamber configured to hold and plasma process a substrate; flowing a probe gas through the plasma processing chamber, the probe gas being different from the process gas; obtaining spatially-resolved OES signals at a wavelength of an optical emission line of the probe gas within the plasma processing chamber, signal intensities of the spatially-resolved OES signals being correlated to a plasma parameter of the plasma, the plasma parameter having a three-dimensional (3D) spatial distribution within the plasma processing chamber; based on the spatially-resolved OES signals, constructing 3D map of OES signals by data fitting of the spatially-resolved OES signals with a computation model; and converting the 3D map of OES signals into a 3D map of the plasma parameter, the 3D map of the plasma parameter comprising information about the 3D spatial distribution of the plasma parameter.

2 . The method of claim 1 , wherein the probe gas comprises neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe), and wherein the probe gas is flowed to the plasma processing chamber at a flow rate between 0.01% and 1% of a total gas flow rate of the process gas.

3 . The method of claim 1 , further comprising temporally monitoring the 3D map of the plasma parameter by repeating the steps of obtaining spatially-resolved OES signals, constructing the 3D map of OES signals, and converting the 3D map of OES signals into the 3D map of the plasma parameter.

4 . A method of characterizing plasma in a plasma processing chamber, the method comprising:
sustaining a plasma generated from a process gas in the plasma processing chamber, the plasma processing chamber being connected to a plasma optical emission spectroscopy (OES) system, the plasma processing chamber being configured to hold and plasma process a substrate; flowing a probe gas to the plasma processing chamber, the probe gas being different from the process gas; obtaining a set of three-dimensional (3D) spatially-resolved OES data from the plasma using the plasma OES system, each OES data comprising an OES spectrum of the probe gas, the OES spectrum being correlated to a plasma parameter of the plasma; and obtaining a set of 3D spatially-resolved values of the plasma parameter that correspond to the set of 3D spatially-resolved OES data, the obtaining of the set of 3D spatially-resolved values of the plasma parameter comprising correlating the OES spectrum in each OES data with a model OES spectrum.

5 . The method of claim 4 , wherein the probe gas is flowed at a flow rate between 0.01% and 1% of a total gas flow rate of the process gas.

6 . The method of claim 4 , wherein the plasma parameter is process gas temperature.

7 . The method of claim 4 , wherein the probe gas comprises a noble gas, and wherein the plasma parameter is electron temperature.

8 . The method of claim 4 , wherein the probe gas comprises dinitrogen (N 2 ), and wherein the plasma parameter is process gas temperature obtained by data fitting using the OES data of the probe gas.

9 . The method of claim 4 , wherein the probe gas comprises dihydrogen (H 2 ), wherein the OES spectrum comprises hydrogen Balmer lines, wherein the probe gas is flowed at a flow rate between 1% and 2% of a total gas flow rate of the process gas, and wherein the plasma parameter is electrical field or fast neutral energy distribution in a plasma sheath region of the plasma.

10 . The method of claim 4 , wherein the probe gas comprises dihydrogen (H 2 ), and wherein the model OES spectrum accounts for Stark splitting effect or Doppler broaden effect of hydrogen Balmer lines.

11 . The method of claim 4 , further comprising based on the set of spatially-resolved values of the plasma parameter, constructing a three-dimensional (3D) map of the plasma parameter by data fitting of the set of spatially-resolved values of the plasma parameter with another computation model.

12 . The method of claim 4 , further comprising temporally monitoring the set of spatially-resolved values of the plasma parameter by repeating the steps of obtaining the set of spatially-resolved OES data, performing the data fitting, and obtaining the set of spatially-resolved values of the plasma parameter.

13 . The method of claim 4 , wherein obtaining the set of spatially-resolved values of the plasma parameter comprises deriving the model OES spectrum from a theoretical spectrum by adding a synthetic noise spectrum and a Gaussian function that accounts for peak broadening to the theoretical spectrum.

14 . The method of claim 4 , wherein the plasma parameter is electron temperature.

15 . The method of claim 4 , wherein the plasma parameter is electrical field energy distribution.

16 . The method of claim 4 , wherein the plasma parameter is fast neutral energy distribution.

17 . A method of processing a substrate, the method comprising:
plasma processing the substrate in a plasma processing chamber by exposing the substrate to a plasma generated from a process gas, the plasma processing chamber being mechanically connected to a plasma optical emission spectroscope (OES); during the plasma processing, flowing a probe gas through the plasma processing chamber, the probe gas being different from the process gas; performing a first scan across the plasma processing chamber in a first plane having a constant first vertical parameter to obtain a first series of OES spectra from a first series of rays that concentrically share a first pivot point; performing a second scan across the plasma processing chamber in the first plane to obtain a second series of OES spectra from a second series of rays that concentrically share a second pivot point; repeating the first scan and the second scan in one or more second planes having respective constant second vertical parameters to obtain one or more additional pairs of first and second series of OES spectra; based on the first and second series of OES spectra including the additional pairs of first and second series of OES spectra, obtaining a set of three-dimensional (3D) spatially-resolved OES intensity data from an optical emission line of the probe gas in the plasma, the OES intensity data correlated to a plasma parameter of the plasma; and based on the set of 3D spatially-resolved OES intensity data, calculating a 3D spatial distribution of the plasma parameter within the plasma processing chamber.

18 . The method of claim 17 , further comprising, based on the 3D spatial distribution of the plasma parameter, changing a process parameter for the plasma processing during the plasma processing.

19 . The method of claim 17 , wherein the constant first vertical parameter is a constant z-axis value, the first plane being a plane parallel to a major surface of the substrate, wherein the constant second vertical parameters are different constant z-axis values defining additional planes, each of the additional planes being a respective second distance from the major surface.

20 . The method of claim 17 , further comprising, performing an endpoint detection of the plasma processing by monitoring the 3D spatial distribution of

Assignees

• Tokyo Electron Ltd

Inventors

• Wang Qiang
• Chen Zhiying
• Ventzek Peter Lowell George

Classifications

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H01J37/32954

  Electron temperature measurement · CPC title

• H01J2237/3341

  Reactive etching · CPC title

• H01J37/32963

  End-point detection · CPC title

• H01J37/32981 Primary

  Gas analysis · CPC title