Physical vapor deposition chamber with target surface morphology monitor

Patent metadata

Field	Value
Publication number	US-12486566-B2
Application number	US-202217866972-A
Country	US
Kind code	B2
Filing date	Jul 18, 2022
Priority date	Jun 3, 2019
Publication date	Dec 2, 2025
Grant date	Dec 2, 2025

Abstract

A sputtering system includes a vacuum chamber, a power source having a pole coupled to a backing plate for holding a sputtering target within the vacuum chamber, a pedestal for holding a substrate within the vacuum chamber, and a time of flight camera positioned to scan a surface of a target held to the backing plate. The time of flight camera may be used to obtain information relating to the topography of the target while the target is at sub-atmospheric pressure. The target information may be used to manage operation of the sputtering system. Managing operation of the sputtering system may include setting an adjustable parameter of a deposition process or deciding when to replace a sputtering target. Machine learning may be used to apply the time of flight camera data in managing the sputtering system operation.

First claim

What is claimed is:

1 . A method of controlling a sputtering system, the method comprising:
monitoring a topography of a surface of a sputtering target using one or more time of flight cameras; progressively modifying a deposition process parameter in relation to changes in the topography, wherein the deposition process parameter is one of a process duration, a pressure, a magnet position, a voltage for a power source, a frequency for a power source, a gas flow rate, a capacitance of a variable capacitor, or a temperature; operating the sputtering system using the modified deposition process parameter; wherein the one or more time of flight cameras comprise a plurality of time of flight cameras, each held at a distinct fixed location within a vacuum chamber of the sputtering system, and the method further comprises: shielding the plurality of time of flight cameras from the sputtering target using a plurality of first substrates, wherein respective ones of the plurality of first substrates shield respective ones of the plurality of time of flight cameras; removing the plurality of first substrates from the sputtering system; placing a plurality of second substrates in the sputtering system; and operating the sputtering system using the deposition process parameter while the plurality of second substrates shield the plurality of time of flight cameras from the sputtering target.

2 . The method of claim 1 , wherein the plurality of time of flight cameras mounted to a pedestal in the vacuum chamber of the sputtering system, and operating the sputtering system using the modified deposition process parameter comprises operating the sputtering system with a substrate held on the pedestal.

3 . The method of claim 1 , wherein modifying the deposition process parameter increases processing time.

4 . The method of claim 1 , wherein modifying the deposition process parameter increases sputtering yield.

5 . The method of claim 1 , wherein the deposition process parameter is one of pressure in the vacuum chamber of the sputtering system, a gas flow rate, or a temperature.

6 . The method of claim 1 , wherein the deposition process parameter is one of a magnet position, a voltage for a power source, a frequency for a power source, or, a capacitance of a variable capacitor.

7 . The method of claim 1 , wherein progressively modifying the deposition process parameter improves uniformity in a series of coatings made using the sputtering system.

8 . The method of claim 1 , wherein progressively modifying the deposition process parameter allows the sputtering target to be used more fully prior to replacement.

9 . A method of controlling a sputtering system, the method comprising:
using a plurality of one or more time of flight cameras held at fixed locations within a pedestal in a vacuum chamber of the sputtering system, scanning a sputtering target to obtain target data; using the target data to select an operating parameter for the sputtering system; and operating the sputtering system with the operating parameter to treat a plurality of substrates while using the plurality of substrates to block lines of sight between respective ones of the plurality of time of flight cameras and the sputtering target.

10 . The method of claim 9 , wherein each of the time of flight cameras includes an array of pixels.

11 . The method of claim 9 , wherein the operating parameter is a target-to-substrate distance.

12 . The method of claim 9 , wherein the operating parameter is a pressure.

13 . The method of claim 9 , wherein using the target data to select an operating parameter for the sputtering system comprises application of a relationship between a target condition and the operating parameter developed using a machine learning process.

14 . The method of claim 13 , wherein the relationship comprises two or more parameters that represent the target condition and are determined from the target data.

15 . The method of claim 9 , wherein each of the time of flight cameras comprises a vertical cavity surface-emitting laser.

16 . A method of controlling a sputtering system, the method comprising:
using one or more time of flight cameras, obtaining target-related training data, which is topographical data relating to a topography of a sputtering target; obtaining coating-related training data, which is associated with the target-related training data and relates to a quality metric for coatings produced using the sputtering target; forming a model that predicts the coating-related training data based on the target-related training data; obtaining current target-related data, which is new topographical data relating to a condition of another sputtering target; and controlling an operation of the sputtering system using the current target-related data in combination with the model; wherein the one or more time of flight cameras comprise a plurality of time of flight cameras, each held at a distinct fixed location within a vacuum chamber of the sputtering system; and a plurality of substrates block lines of sight between respective ones of the plurality of time of flight cameras and the sputtering target while operating the sputtering system.

17 . The method of claim 16 , wherein the quality metric for the coatings produced using the sputtering target relates to density of defects in the coatings, conformity of the coatings to underlying topography, or roughness of the coating surfaces.

18 . The method of claim 16 , wherein the quality metric for the coatings produced using the sputtering target relates to resistivity of the coatings.

19 . The method of claim 16 , wherein the model is sensitive to nodules on the sputtering target.

20 . The method of claim 16 , wherein the target-related training data reports the topography of the sputtering target with an image resolution of 1 mm or less.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Trinh Hai-Dang
• Wu Chii-Ming
• Pan Shing-Chyang

Classifications

• C23C14/35 Primary

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• G06N20/00

  Machine learning · CPC title

• C23C14/52

  Means for observation of the coating process · CPC title

• C23C14/543

  using measurement on the vapor source · CPC title

• C23C14/54 Primary

  Controlling or regulating the coating process · CPC title