Cleaning composition
US-2022336210-A1 · Oct 20, 2022 · US
US12486473B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12486473-B2 |
| Application number | US-202318124355-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 21, 2023 |
| Priority date | Mar 23, 2022 |
| Publication date | Dec 2, 2025 |
| Grant date | Dec 2, 2025 |
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The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C6-C12 alkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly silicon (poly Si) substrates. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in one or more containers, selected components of the compositions.
Opening claim text (preview).
What is claimed is: 1 . A method for removing residues on a microelectronic device substrate, the method comprising: contacting the surface of a microelectronic device substrate with a composition comprising: a. a reducing agent; b. a chelating agent; c. an amino (C 6 -C 12 alkyl)alcohol; and d. water; wherein the composition has a pH of less than about 8, and wherein the composition further comprises 4-(2-hydroxyethyl)-1-piperazineethanesulfonic acid, or a salt thereof, and at least partially removing the residues from the substrate. 2 . The method of claim 1 , wherein the reducing agent is selected from the group consisting of hypophosphorous acid, diethylhydroxylamine, sulfurous acid, and L-ascorbic acid. 3 . The method of claim 1 , wherein the chelating agent is selected from the group consisting of aspartic acid, glutamic acid, citric acid, phosphoric acid, nitrile-tris (methylene phosphonic acid), and 1-hydroxyethylidene-1,1-diphosphonic acid. 4 . The method of claim 1 , wherein the composition further comprises a fluoride source. 5 . The method of claim 1 , wherein the composition further comprises a nonionic surfactant. 6 . The method of claim 1 , wherein the composition further comprises a water-miscible solvent. 7 . The method of claim 1 , wherein the composition further comprises a water-soluble or water-dispersible polymer. 8 . The method of claim 1 , wherein the composition further comprises at least one of poly(styrenesulfonic acid); polyoxyethylene(23) lauryl ether; glutamic acid, and aspartic acid. 9 . The method of claim 1 , wherein the composition is devoid of corrosion inhibitors.
the processing being a planarisation of insulating layers · CPC title
during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title
Acids · CPC title
Phosphonates, phosphinates or phosphonites · CPC title
Carboxylic acids-salts thereof · CPC title
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