Post CMP cleaning composition

US12486473B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12486473-B2
Application numberUS-202318124355-A
CountryUS
Kind codeB2
Filing dateMar 21, 2023
Priority dateMar 23, 2022
Publication dateDec 2, 2025
Grant dateDec 2, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C6-C12 alkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly silicon (poly Si) substrates. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in one or more containers, selected components of the compositions.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method for removing residues on a microelectronic device substrate, the method comprising: contacting the surface of a microelectronic device substrate with a composition comprising: a. a reducing agent; b. a chelating agent; c. an amino (C 6 -C 12 alkyl)alcohol; and d. water; wherein the composition has a pH of less than about 8, and wherein the composition further comprises 4-(2-hydroxyethyl)-1-piperazineethanesulfonic acid, or a salt thereof, and at least partially removing the residues from the substrate. 2 . The method of claim 1 , wherein the reducing agent is selected from the group consisting of hypophosphorous acid, diethylhydroxylamine, sulfurous acid, and L-ascorbic acid. 3 . The method of claim 1 , wherein the chelating agent is selected from the group consisting of aspartic acid, glutamic acid, citric acid, phosphoric acid, nitrile-tris (methylene phosphonic acid), and 1-hydroxyethylidene-1,1-diphosphonic acid. 4 . The method of claim 1 , wherein the composition further comprises a fluoride source. 5 . The method of claim 1 , wherein the composition further comprises a nonionic surfactant. 6 . The method of claim 1 , wherein the composition further comprises a water-miscible solvent. 7 . The method of claim 1 , wherein the composition further comprises a water-soluble or water-dispersible polymer. 8 . The method of claim 1 , wherein the composition further comprises at least one of poly(styrenesulfonic acid); polyoxyethylene(23) lauryl ether; glutamic acid, and aspartic acid. 9 . The method of claim 1 , wherein the composition is devoid of corrosion inhibitors.

Assignees

Inventors

Classifications

  • the processing being a planarisation of insulating layers · CPC title

  • during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

  • Acids · CPC title

  • Phosphonates, phosphinates or phosphonites · CPC title

  • Carboxylic acids-salts thereof · CPC title

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What does patent US12486473B2 cover?
The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C6-C12 alkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly sil…
Who is the assignee on this patent?
Entegris Inc
What technology area does this patent fall under?
Primary CPC classification C11D3/0042. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 02 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).