Lamination apparatus and method

Patent metadata

Field	Value
Publication number	US-12485664-B2
Application number	US-202318165933-A
Country	US
Kind code	B2
Filing date	Feb 8, 2023
Priority date	Feb 8, 2023
Publication date	Dec 2, 2025
Grant date	Dec 2, 2025

Abstract

A method for laminating a film to a wafer and apparatus for performing the lamination process are disclosed. The method includes providing the wafer and the film in a process chamber where the wafer and the film are separated from each other, achieving a vacuum state and a process temperature in the process chamber, and laminating the film to contact a surface of the wafer.

First claim

What is claimed is:

1 . A method for laminating a film to a wafer, comprising:
providing the wafer at a first side of a process chamber and the film at a second side of the chamber, the wafer and the film being separated from each other, wherein a plate and a jig around the plate are positioned at the second side of the chamber, and the film is positioned below the jig and the plate; achieving a vacuum state and a process temperature in the process chamber; and by moving the plate and the jig toward the first side, laminating the film to a surface of the wafer.

2 . The method of claim 1 , wherein a contact interface between the film and the wafer is bubble-free.

3 . The method of claim 1 , wherein the film is free from generating wrinkles after being laminated to the wafer.

4 . The method of claim 1 , wherein the film includes a dielectric material or a molding material.

5 . The method of claim 1 , wherein the process temperature is in a range of about 100° C. to about 150° C., wherein the distance the jig moves toward the first side is greater than the distance the plate moves toward the first side.

6 . A method for performing a lamination process, comprising:
positioning a substrate at a first side of a chamber and positioning a process film at a second side of the chamber opposite to the first side, wherein the process film is positioned through a surface adhesion between the process film and a silicone rubber located at the second side of the chamber; obtaining an enclosed space in the chamber that is heated and vacuumed; and applying a pressure to the silicone rubber and the process film to press the process film against the substrate, wherein applying the pressure to the silicone rubber and the process film includes actuating connecting rods located at the second side of the chamber to push down the process film.

7 . The method of claim 6 , wherein a surface of the silicone rubber in contact with the process film has a surface roughness in a range of about 1 μm to about 10 μm.

8 . The method of claim 6 , wherein the silicone rubber includes an anti-electrostatic-type rubber, a room-temperature-vulcanizing rubber, or a fluororubber.

9 . The method of claim 6 , wherein the silicone rubber has a thickness of about 0.1 mm to about 5 mm.

10 . The method of claim 6 , wherein sidewalls of the process film are laterally offset inward from sidewalls of the substrate after the lamination process.

11 . The method of claim 6 , wherein the connecting rods include pneumatic-driven rods, hydraulic-driven rods, or electromechanical-driven rods.

12 . The method of claim 6 , further comprising pumping an air into the enclosed space of the chamber after the process film is pressed against the substrate.

13 . A method for performing a lamination process, comprising:
providing a process chamber comprising an upper chamber, a lower chamber, and an inner space between the upper chamber and the lower chamber, the lower chamber operable to support a substrate and the upper chamber operable to carry a process film to be laminated on the substrate, wherein a silicone rubber is configured to the upper chamber of the process chamber, and the process film is adhered to a flat and smooth surface of the silicone rubber, wherein the silicone rubber includes an anti-electrostatic-type rubber, a room-temperature-vulcanizing rubber, or a fluororubber; and pressing the process film against the substrate.

14 . The method of claim 13 , wherein the process film comprises a material film and a cover film on top of the material film, and the cover film is between the silicone rubber and the material film when the process film is carried by the upper chamber.

15 . The method of claim 13 , wherein the process film is pressed against the substrate by a presser mechanical coupled to the process chamber.

16 . The method of claim 15 , further comprising:
raising a temperature of the inner space of the process chamber by a heater thermally coupled to the process chamber.

17 . The method of claim 16 , further comprising:
generating a vacuum state within the inner space of the process chamber by a vacuum pump fluidly coupled to the process chamber.

18 . The method of claim 17 , wherein the lower chamber comprises a substrate pedestal to support the substrate, and a surface area of the substrate is smaller than that of the substrate pedestal.

19 . The method of claim 13 , wherein the upper chamber comprises a jig in contact with the silicone rubber, and the jig is vertically moved in the process chamber during the lamination process.

20 . The method of claim 19 , wherein the upper chamber further comprises a metal plate in contact with the silicone rubber and surrounded by the jig, and in a plan view, the metal plate has a circular shape and the jig has a ring shape.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiu Yu-Ting
• Huang Ying-Jui
• Hwang Chien-Ling
• Hsieh Ching-Hua

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W74/019

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W72/07337

  using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title

• H10W70/093

  Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps · CPC title

• H10W70/09

  extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs · CPC title