U-LED, U-LED device, display and method for the same

Patent metadata

Field	Value
Publication number	US-12484361-B2
Application number	US-202217815866-A
Country	US
Kind code	B2
Filing date	Jul 28, 2022
Priority date	Apr 23, 2019
Publication date	Nov 25, 2025
Grant date	Nov 25, 2025

Abstract

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

First claim

The invention claimed is:

1 . A μ-LED comprising:
a functional layer stack having an active layer having a first main surface side facing away from a growth substrate and a second main surface side facing the growth substrate;
a first electrically conductive contact layer arranged on the first main surface side;
a second electrically conductive contact layer applied to the second main surface side; and
a holding structure anchored on or partially in the growth substrate and supporting the functional layer stack with the first electrically conductive contact layer and the second electrically conductive contact layer, wherein the holding structure extends from the growth substrate along a side portion of the functional layer stack to a side portion of the first electrically conductive contact layer, wherein the holding structure is configured to be breakable for separating the μ-LED from the holding structure during a lift-off procedure,
wherein the active layer has an increased band gap in edge regions of the μ-LED or in regions which are at least adjacent to the holding structure or adjacent to a break-off edge.

2 . The μ-LED according to claim 1 , further comprising quantum well intermixing in edge regions of the active layer or in regions of the active layer adjacent to the holding structure or adjacent to a break-off edge.

3 . The μ-LED according to claim 1 , wherein the holding structure comprises InGaAlP or AlGaAs or BCB or an oxide or a nitride or a combination of such materials and is electrically non-conductive.

4 . The μ-LED according to claim 1 , wherein the holding structure further comprises a layer of InGaAlP or a layer of AlGaAs, wherein the layer of InGaAlP or the layer of AlGaAs is attached to the functional layer stack on the first main surface side.

5 . The μ-LED according to claim 1 , wherein the holding structure further comprises a layer of InGaAlP or a layer of AlGaAs, and wherein the layer of InGaAlP or the layer of AlGaAs is attached to the functional layer stack on the second main surface side and comprises InGaAlP or AlGaAs.

6 . The μ-LED according to claim 1 , wherein the first electrically conductive contact layer or the second electrically conductive contact layer comprises ITO or ZnO or a metal.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Behringer Martin
• Biebersdorf Andreas
• Boss Ruth
• Lang Erwin
• Meyer Tobias
• Pfeuffer Alexander
• Philippens Marc
• Stolz Julia
• Varghese Tansen
• Wittmann Sebastian
• Herrmann Siegfried
• Hahn Berthold
• Jentzsch Bruno
• Perzlmaier Korbinian
• Stauss Peter
• Sundgren Petrus
• Mueller Jens
• Neveling Kerstin
• Singer Frank
• Mueller Christian

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/814

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H20/01

  Manufacture or treatment · CPC title