Hybrid backside thermal structures for enhanced ic packages

Patent metadata

Field	Value
Publication number	US-12482779-B2
Application number	US-202418593775-A
Country	US
Kind code	B2
Filing date	Mar 1, 2024
Priority date	Feb 7, 2020
Publication date	Nov 25, 2025
Grant date	Nov 25, 2025

Abstract

An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

First claim

We claim:

1 . An apparatus, comprising:
an integrated circuit (IC) die comprising integrated circuitry over a first side of a material layer comprising silicon, and a second side of the IC die opposite the first side of the material layer; and a composite layer on the second side of the IC die, wherein the composite layer comprises:
a first constituent material having a first linear coefficient of thermal expansion (CTE) and a first thermal conductivity, the first thermal conductivity exceeding that of the material layer; and
a second constituent material having a second CTE, the second CTE lower than the first CTE by at least 5 ppm/K, and a second thermal conductivity exceeding that of the material layer, wherein the composite layer comprises particles of one of the first or second constituent materials embedded within another of the first or second constituent materials.

2 . The apparatus of claim 1 , wherein the first thermal conductivity is at least 200 W/m-K, the second thermal conductivity is at least 200 W/m-K, the first CTE is over 10 ppm/K, and the second CTE is less than 5 ppm/K.

3 . The apparatus of claim 1 , wherein the composite layer comprises a plurality of lamellae, individual ones of the lamellae comprising ones of the particles of the first or second constituent material clad by the other of the first or second constituent materials.

4 . The apparatus of claim 1 , wherein the particles have a diameter greater than 1 μm.

5 . The apparatus of claim 1 , wherein the composite layer has a first thickness over a first region of the material layer and, over a second region of the material layer, the composite layer is absent or has a second thickness significantly less than the first thickness.

6 . The apparatus of claim 1 , wherein the IC die comprises at least one second material layer between the composite layer and the material layer, the at least one second material layer comprising one or more of platinum, palladium, nickel, vanadium, tantalum, titanium, tungsten, chromium, copper, gold, silver, indium, tin, aluminum, nitrogen, or oxygen.

7 . The apparatus of claim 1 , further comprising:
a network interface or a display device coupled to the IC die.

8 . An apparatus, comprising:
an integrated circuit (IC) die comprising integrated circuitry over a first side of a material layer comprising silicon, and a second side of the IC die opposite the first side of the material layer; and a composite layer on the second side of the IC die, wherein the composite layer comprises:
a first constituent material having a first linear coefficient of thermal expansion (CTE) and a first thermal conductivity, the first thermal conductivity exceeding that of the material layer; and
a second constituent material having a second CTE, the second CTE lower than the first CTE by at least 5 ppm/K, and a second thermal conductivity exceeding that of the material layer, wherein the composite layer comprises particles of one of the second constituent material embedded within a matrix of the first constituent material.

9 . The apparatus of claim 8 , wherein the first thermal conductivity is at least 200 W/m-K, the second thermal conductivity is at least 200 W/m-K, the first CTE is over 10 ppm/K, and the second CTE is less than 5 ppm/K.

10 . The apparatus of claim 8 , wherein the first constituent material is a metal and the second constituent material is a non-metal.

11 . The apparatus of claim 8 , wherein the first constituent material comprises at least one of copper, silver, or aluminum, and wherein the second constituent material comprises at least one of aluminum nitride, silicon carbide, boron arsenide, or diamond.

12 . The apparatus of claim 8 , wherein the first constituent material has a higher ductility than the second constituent material.

13 . The apparatus of claim 8 , wherein the IC die comprises at least one second material layer between the composite layer and the material layer, the at least one second material layer comprising one or more of platinum, palladium, nickel, vanadium, tantalum, titanium, tungsten, chromium, copper, gold, silver, indium, tin, aluminum, nitrogen, or oxygen.

14 . The apparatus of claim 8 , further comprising:
a network interface or a display device coupled to the IC die.

15 . An apparatus, comprising:
an integrated circuit (IC) die comprising integrated circuitry over a first side of a material layer comprising silicon, and a second side of the IC die opposite the first side of the material layer; and a composite layer on the second side of the IC die, wherein the composite layer comprises:
a first constituent material having a first linear coefficient of thermal expansion (CTE) and a first thermal conductivity, the first thermal conductivity exceeding that of the material layer; and
a second constituent material having a second CTE, the second CTE lower than the first CTE by at least 5 ppm/K, and a second thermal conductivity exceeding that of the material layer, wherein the composite layer comprises alternating layers of the first constituent material and the second constituent material.

16 . The apparatus of claim 15 , wherein the first thermal conductivity is at least 200 W/m-K, the second thermal conductivity is at least 200 W/m-K, the first CTE is over 10 ppm/K, and the second CTE is less than 5 ppm/K.

17 . The apparatus of claim 15 , wherein the first constituent material is a metal and the second constituent material is a non-metal.

18 . The apparatus of claim 15 , wherein the first constituent material comprises at least one of copper, silver, or aluminum, and wherein the second constituent material comprises at least one of aluminum nitride, silicon carbide, boron arsenide, or diamond.

19 . The apparatus of claim 15 , wherein the IC die comprises at least one second material layer between the composite layer and the material layer, the at least one second material layer comprising one or more of platinum, palladium, nickel, vanadium, tantalum, titanium, tungsten, chromium, copper, gold, silver, indium, tin, aluminum, nitrogen, or oxygen.

20 . The apparatus of claim 15 , further comprising:
a network interface or a display device coupled to the IC die.

Assignees

• Intel Corp

Inventors

• Eid Feras
• Walczyk Joe
• Tang Weihua
• Rallabandi Akhilesh
• Cartas Ayala Marco Aurelio

Classifications

• H10W72/353

  not comprising solid metals or solid metalloids, e.g. ceramics · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W72/325

  Die-attach connectors having a filler embedded in a matrix · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title