Selective passivation and selective deposition

Patent metadata

Field	Value
Publication number	US-12482648-B2
Application number	US-202117390608-A
Country	US
Kind code	B2
Filing date	Jul 30, 2021
Priority date	Oct 2, 2018
Publication date	Nov 25, 2025
Grant date	Nov 25, 2025

Abstract

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

First claim

What is claimed is:

1 . A method of selectively depositing a metal oxide on a second surface of a substrate relative to a first surface of the substrate, where the first and second surfaces have different compositions, the method comprising, in order:
selectively forming an organic passivation layer from vapor phase reactants on the first surface relative to the second surface; and selectively depositing metal oxide comprising aluminum oxide from vapor phase reactants on the second surface relative to the organic passivation layer, wherein the aluminum oxide is deposited using an aluminum precursor comprising one or more of: an aluminum precursor comprising one or more acetate ligands, AlMe(OMe) 2 , AlMe(OEt) 2 , AlMe(OiPr) 2 , AlMe(OtBu) 2 , AlEt(OMe) 2 , AlEt(OEt) 2 , AlEt(OiPr) 2 , and AlEt(OtBu) 2 .

2 . The method of claim 1 , wherein the first surface comprises a metal or metallic material and the second surface comprises a dielectric material.

3 . The method of claim 1 , wherein the aluminum oxide is deposited using an aluminum precursor comprising one or more of AlMe(OMe) 2 , AlMe(OEt) 2 , AlMe(OtBu) 2 , AlEt(OMe) 2 , AlEt(OEt) 2 , and AlEt(OtBu) 2 .

4 . The method of claim 1 , wherein the aluminum oxide is deposited using an aluminum precursor comprising one or more acetate ligands.

5 . The method of claim 4 , wherein the aluminum precursor comprises aluminum triacetate.

6 . The method of claim 1 , wherein the metal oxide is selectively deposited by an atomic layer deposition process.

7 . The method of claim 1 , additionally comprising treating the first and second surfaces prior to selectively forming the organic passivation layer.

8 . The method of claim 7 , wherein treating comprises exposing the substrate to a plasma or a silane.

9 . The method of claim 7 , wherein treating comprises exposing the substrate to N-(trimethylsilyl) dimethylamine (TMSDMA), trimethylchlorosilane or an alkylaminosilane.

10 . The method of claim 1 , wherein selectively forming an organic passivation layer comprises selectively depositing a polyimide layer on the first surface relative to the second surface.

11 . The method of claim 10 , additionally comprising treating the deposited polyimide layer by UV treatment or annealing to form a polymer layer.

12 . The method of claim 1 , wherein the aluminum oxide is deposited using at least one aluminum precursor selected from the group consisting of AlMe(OMe) 2 , AlMe(OEt) 2 , AlMe(OiPr) 2 , AlMe(OtBu) 2 , AlEt(OMe) 2 , AlEt(OEt) 2 , AlEt(OiPr) 2 , and AlEt(OtBu) 2 .

13 . The method of claim 1 , wherein the aluminum oxide is deposited using at least one aluminum precursor selected from the group consisting of an aluminum precursor comprising one or more acetate ligands.

Assignees

• Asm Ip Holding Bv

Inventors

• Maes Jan Willem
• Givens Michael Eugene
• Haukka Suvi P
• Paruchuri Vamsi
• Raaijmakers Ivo Johannes
• Deng Shaoren
• Illiberi Andrea
• Tois Eva E
• Longrie Delphine
• Dezelah Charles
• Tuominen Marko

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/683 Primary

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title