Electromagnetic wave attenuator and electronic device

Patent metadata

Field	Value
Publication number	US-12476341-B2
Application number	US-202217876132-A
Country	US
Kind code	B2
Filing date	Jul 28, 2022
Priority date	Nov 9, 2021
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

According to one embodiment, an electromagnetic wave attenuator includes a stacked member including a first planar portion. The first planar portion includes a first stacked body. The first stacked body includes a plurality of non-magnetic layers including Cr and Ti, and a plurality of first magnetic layers. A direction from one of the first magnetic layers to an other one of the first magnetic layers is along a first direction. One of the non-magnetic layers is between the one of the first magnetic layers and the other one of the first magnetic layers. The one of the first non-magnetic layers includes an amorphous region. The one of the first magnetic layers and the other one of the first magnetic layers include a crystal region.

First claim

What is claimed is:

1 . An electromagnetic wave attenuator, comprising:
a stacked member including a first planar portion, the first planar portion including a first stacked body, the first stacked body including a plurality of first non-magnetic layers including Cr and Ti, and a plurality of first magnetic layers, a direction from one of the first magnetic layers to an other one of the first magnetic layers being along a first direction, one of the first non-magnetic layers being between the one of the first magnetic layers and the other one of the first magnetic layers, the one of the first non-magnetic layers including an amorphous region, and the one of the first magnetic layers and the other one of the first magnetic layers including a crystal region, wherein
the first planar portion further includes a second stacked body,
a direction from the first stacked body to the second stacked body is along the first direction,
the second stacked body includes a plurality of second non-magnetic layers including Cu, and a plurality of second magnetic layers,
a direction from one of the second magnetic layers to an other one of the second magnetic layers is along the first direction, and
one of the second non-magnetic layers is between the one of the second magnetic layers and the other one of the second magnetic layers,
the one of the first magnetic layers includes a plurality of first crystal grains,
the one of the second magnetic layers includes a plurality of second crystal grains, and
an average diameter of the second crystal grains is larger than an average diameter of the first crystal grains.

2 . The attenuator according to claim 1 , wherein
the one of the first non-magnetic layers is in contact with the one of the first magnetic layers and the other one of the first magnetic layers.

3 . The attenuator according to claim 1 , wherein
a thickness of the one of the first non-magnetic layers along the first direction is not less than 1 nm and not more than 10 nm.

4 . The attenuator according to claim 1 , wherein
a thickness of the one of the first magnetic layers along the first direction is not less than 10 nm and not more than 500 nm.

5 . The attenuator according to claim 1 , wherein
the first magnetic layers include at least one selected from the group consisting of Fe, Ni and Co.

6 . The attenuator according to claim 1 , wherein the one of the second non-magnetic layers is in contact with the one of the second magnetic layers and the other one of the second magnetic layers.

7 . The attenuator according to claim 1 , wherein a thickness of the one of the second non-magnetic layers along the first direction is not less than 50 nm and not more than 200 nm.

8 . The attenuator according to claim 1 , wherein a thickness of the one of the second magnetic layers along the first direction is not less than 50 nm and not more than 200 nm.

9 . The attenuator according to claim 1 , wherein the second magnetic layers include at least one selected from the group consisting of Fe, Ni and Co.

10 . The attenuator according to claim 1 , wherein
each of the first crystal grains has a first crystal grain width along a vertical direction perpendicular to the first direction, an average of the first crystal grain width is not less than 2 nm and not more than 20 nm in the first crystal grains, each of the second crystal grains has a second crystal grain width along the vertical direction, and an average of the second crystal grain width is not less than 30 nm and not more than 200 nm in the second crystal grains.

11 . The attenuator according to claim 1 , wherein
the first planar portion includes a third stacked body, the third stacked body includes a plurality of third magnetic layers and a plurality of third non-magnetic layers, a direction from one of the third magnetic layers to an other one of the third magnetic layers is along the first direction, one of the third non-magnetic layers is between the one of the third magnetic layers and the other one of the third magnetic layers, and the third non-magnetic layers include at least one selected from the group consisting of Cr, Cu, Ta, Ti, W, Mo, Nb and Hf.

12 . The attenuator according to claim 11 , wherein
the one of the third non-magnetic layers is in contact with the one of the third magnetic layers and the other one of the third magnetic layers.

13 . The attenuator according to claim 11 , wherein
the one of the third non-magnetic layers includes an amorphous region, and the one of the third magnetic layers and the other one of the third magnetic layers include a crystal region.

14 . The attenuator according to claim 1 , wherein
the one of the first magnetic layers includes a first magnetic layer surface facing the one of the first non-magnetic layers, the first magnetic layer surface includes a first top portion, a second top portion, and a first bottom portion, a position of the first bottom portion in a crossing direction crossing the first direction is between a position of the first top portion in the crossing direction and a position of the second top portion in the crossing direction, and at least a part of the one of the first non-magnetic layers is between the first top portion and the second top portion in the crossing direction.

15 . The attenuator according to claim 1 , further comprising:
a base body, a direction from the base body to the first planar portion being along the first direction.

16 . The attenuator according to claim 15 , wherein
the base body includes a resin.

17 . The attenuator according to claim 1 , wherein
the stacked member further includes a first side surface portion, the first side surface portion includes a first side surface stacked body, the first side surface stacked body includes a plurality of first side surface non-magnetic layers including Cr and Ti, and a plurality of first side surface magnetic layers, a direction from one of the first side surface magnetic layers to an other one of the first side surface magnetic layers is along a second direction crossing the first direction, one of the first side surface non-magnetic layers is between the one of the first side surface magnetic layers and the other one of the first side surface magnetic layers, the one of the first side surface non-magnetic layers includes an amorphous region, and the one of the first side surface magnetic layers and the other one of the first side surface magnetic layers include a crystal region.

18 . An electronic device, comprising:
the attenuator according to claim 1 ; and an electronic element.

19 . An electromagnetic wave attenuator, comprising:
a stacked member including a first planar portion, the first planar portion including a first stacked body, the first stacked body including a plurality of first non-magnetic layers including Cr and Ti, and a plurality of first magnetic layers, a direction from one of the first magnetic layers to an other one of the first magnetic layers being along a first direction, one of the first non-magnetic layers being between the one of the first magnetic layers and the other one of the first magnetic layers, the one of the first non-magnetic layers including an amorphous region, and the one of the first magnetic layers and the other one of the first magnetic layers including a crystal region, wherein
the stacked member further includes a first side surface portion,
the first side surface portion includes a first side

Assignees

• Toshiba Kk

Inventors

• Kikitsu Akira
• Kurosaki Yoshinari
• Shirotori Satoshi

Classifications

• H10W42/20

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title

• H01P1/22

  Attenuating devices (dissipative terminating devices H01P1/26) · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10B61/22

  of the field-effect transistor [FET] type · CPC title

• H05K9/0031

  combining different shielding materials · CPC title