Semiconductor device

Patent metadata

Field	Value
Publication number	US-2019081007-A1
Application number	US-201815908590-A
Country	US
Kind code	A1
Filing date	Feb 28, 2018
Priority date	Sep 13, 2017
Publication date	Mar 14, 2019
Grant date	—

Abstract

According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first magnetic planar region separated from the semiconductor element in a first direction, and a first nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. At least a portion of the first magnetic planar region includes Fe 1-x1-x2 α x1 N x2 . α includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al. x1 is not less than 0.5 atomic percent and not more than 10 atomic percent. x2 is not less than 0.5 atomic percent and not more than 8 atomic percent.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a semiconductor element; and a first member, the first member including
a first magnetic planar region separated from the semiconductor element in a first direction, and
a first nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction,
at least a portion of the first magnetic planar region including Fe 1-x1-x2 α x1 N x2 , a including at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al, x1 being not less than 0.5 atomic percent and not more than 10 atomic percent, x2 being not less than 0.5 atomic percent and not more than 8 atomic percent.

2 . The device according to claim 1 , wherein
the first member further includes a second nonmagnetic planar region, and the first magnetic planar region is positioned between the first nonmagnetic planar region and the second nonmagnetic planar region in the first direction.

3 . The device according to claim 2 , wherein the second nonmagnetic planar region includes at least one selected from the group consisting of Cu, Al, and Ag.

4 . The device according to claim 1 , wherein the first nonmagnetic planar region includes at least one selected from the group consisting of Cu, Al, and Ag.

5 . The device according to claim 1 , wherein the first nonmagnetic planar region includes Cu.

6 . The device according to claim 1 , wherein a ratio of a residual magnetization of the first magnetic planar region to a saturation magnetization of the first magnetic planar region is 0.7 or less.

7 . The device according to claim 1 , wherein x1 is higher than x2.

8 . The device according to claim 1 , wherein a thickness along the first direction of the first nonmagnetic planar region is 150 nm or more.

9 . The device according to claim 1 , wherein a thickness along the first direction of the first magnetic planar region is 50 nm or more.

10 . The device according to claim 1 , wherein
the first magnetic planar region includes a plurality of magnetic domains, and a direction of a magnetization of one of the plurality of magnetic domains crosses a direction of a magnetization of another one of the plurality of magnetic domains.

11 . The device according to claim 10 , wherein a direction of a magnetization of yet another one of the plurality of magnetic domains crosses the direction of the magnetization of the one of the plurality of magnetic domains and crosses the direction of the magnetization of the other one of the plurality of magnetic domains.

12 . The device according to claim 10 , wherein a length of the one of the plurality of magnetic domains along a direction crossing the first direction is not less than 0.1 μm and not more than 200 μm.

13 . The device according to claim 10 , wherein the plurality of magnetic domains are arranged in a plane crossing the first direction.

14 . The device according to claim 2 , wherein
the first member further includes a second magnetic planar region, the second nonmagnetic planar region is positioned between the second magnetic planar region and the first magnetic planar region in the first direction, and at least a portion of the second magnetic planar region includes Fe 1-x3-x4 α x3 N x4 , a including at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al, x3 being not less than 0.5 atomic percent and not more than 10 atomic percent, x4 being not less than 0.5 atomic percent and not more than 8 atomic percent.

15 . The device according to claim 1 , wherein
the semiconductor element includes:
a semiconductor chip; and
an insulating portion including a resin and being provided between the first member and at least a portion of the semiconductor chip.

16 . The device according to claim 1 , wherein
the first member further includes:
a first magnetic side surface region separated from the semiconductor element in a second direction crossing the first direction; and
a first nonmagnetic side surface region provided between the first magnetic side surface region and the semiconductor element in the second direction, and
a material of the first magnetic side surface region is the same as a material of the first magnetic planar region.

17 . The device according to claim 16 , wherein
the first member further includes:
a second magnetic side surface region separated from the semiconductor element in a third direction, the third direction crossing a plane including the first direction and the second direction; and
a second nonmagnetic side surface region provided between the second magnetic side surface region and the semiconductor element in the third direction, and
a material of the second magnetic side surface region is the same as the material of the first magnetic planar region.

18 . The device according to claim 16 , wherein
the first member further includes:
a third magnetic side surface region; and
a third nonmagnetic side surface region,
the semiconductor element is positioned between the first magnetic side surface region and the third magnetic side surface region in the second direction, the third nonmagnetic side surface region is positioned between the third magnetic side surface region and the semiconductor element in the second direction, and a material of the third magnetic side surface region is the same as the material of the first magnetic planar region.

19 . The device according to claim 16 , wherein
the first member further includes:
a fourth magnetic side surface region; and
a fourth nonmagnetic side surface region,
the semiconductor element is positioned between the second magnetic side surface region and the fourth magnetic side surface region in the third direction, the fourth nonmagnetic side surface region is positioned between the fourth magnetic side surface region and the semiconductor element in the third direction, and a material of the fourth magnetic side surface region is the same as the material of the first magnetic planar region.

Assignees

• Toshiba Kk

Inventors

• Iwasaki Hitoshi
• Kikitsu Akira
• Kurosaki Yoshinari

Classifications

• H10W42/287

  materials for magnetic shielding, e.g. ferromagnetic materials · CPC title

• H10W42/276

  the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/117

  the substrate having spherical bumps for external connection · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title