Semiconductor device

Patent metadata

Field	Value
Publication number	US-2018337139-A1
Application number	US-201815908212-A
Country	US
Kind code	A1
Filing date	Feb 28, 2018
Priority date	May 16, 2017
Publication date	Nov 22, 2018
Grant date	—

Abstract

According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a semiconductor element; and a first member, the first member including
a first nonmagnetic planar region separated from the semiconductor element in a first direction,
a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and
a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction,
the first magnetic planar region including a first end portion extending along a second direction crossing the first direction, a first magnetization direction of the first magnetic planar region being tilted with respect to the second direction.

2 . The device according to claim 1 , wherein an angle between the first magnetization direction and the second direction is greater than 5 degrees but less than 85 degrees.

3 . The device according to claim 1 , wherein the absolute value of an angle between the first magnetization direction and the first direction is not less than 80 degrees and not more than 100 degrees.

4 . The device according to claim 1 , wherein
the first member further includes:
a first nonmagnetic side surface region separated from the semiconductor element in a third direction, the third direction crossing a plane including the first direction and the second direction;
a first magnetic side surface region provided between the first nonmagnetic side surface region and the semiconductor element in the third direction; and
a second nonmagnetic side surface region provided between the first magnetic side surface region and the semiconductor element in the third direction.

5 . The device according to claim 4 , wherein
the first member further includes:
a third nonmagnetic side surface region separated from the semiconductor element in the second direction;
a second magnetic side surface region provided between the first nonmagnetic side surface region and the semiconductor element in the second direction; and
a fourth nonmagnetic side surface region provided between the first magnetic side surface region and the semiconductor element in the second direction.

6 . The device according to claim 5 , wherein
the first member further includes:
a fifth nonmagnetic side surface region;
a third magnetic side surface region; and
a sixth nonmagnetic side surface region,
the semiconductor element is provided between the second nonmagnetic side surface region and the fifth nonmagnetic side surface region in the third direction, the third magnetic side surface region is provided between the fifth nonmagnetic side surface region and the semiconductor element in the third direction, and the sixth nonmagnetic side surface region is provided between the third magnetic side surface region and the semiconductor element in the third direction.

7 . The device according to claim 6 , wherein
the first member further includes:
a seventh nonmagnetic side surface region;
a fourth magnetic side surface region; and
an eighth nonmagnetic side surface region,
the semiconductor element is provided between the third nonmagnetic side surface region and the seventh nonmagnetic side surface region in the second direction, the fourth magnetic side surface region is provided between the seventh nonmagnetic side surface region and the semiconductor element in the second direction, and the eighth nonmagnetic side surface region is provided between the fourth magnetic side surface region and the semiconductor element in the second direction.

8 . The device according to claim 1 , wherein
the first member further includes:
a second magnetic planar region provided between the second nonmagnetic planar region and the semiconductor element in the first direction; and
a third nonmagnetic planar region provided between the second magnetic planar region and the semiconductor element in the first direction,
the second magnetic planar region includes a second end portion extending along the second direction, and a second magnetization direction of the second magnetic planar region is tilted with respect to the second direction and crosses the first magnetization direction.

9 . The device according to claim 8 , wherein the absolute value of an angle between the second magnetization direction and the second direction is greater than 5 degrees but less than 85 degrees.

10 . The device according to claim 8 , wherein the absolute value of an angle between the first magnetization direction and the second magnetization direction is not less than 45 degrees and not more than 135 degrees.

11 . The device according to claim 8 , wherein the second magnetic planar region includes a material different from a material of the first magnetic planar region.

12 . The device according to claim 8 , wherein
the first member further includes:
a first nonmagnetic side surface region separated from the semiconductor element in a third direction, the third direction crossing a plane including the first direction and the second direction;
a first magnetic side surface region provided between the first nonmagnetic side surface region and the semiconductor element in the third direction;
a second nonmagnetic side surface region provided between the first magnetic side surface region and the semiconductor element in the third direction;
a first other magnetic side surface region provided between the second nonmagnetic side surface region and the semiconductor element in the third direction; and
a first other nonmagnetic side surface region provided between the first other magnetic side surface region and the semiconductor element in the third direction.

13 . The device according to claim 12 , wherein
the first member further includes:
a third nonmagnetic side surface region separated from the semiconductor element in the second direction;
a second magnetic side surface region provided between the first nonmagnetic side surface region and the semiconductor element in the second direction;
a fourth nonmagnetic side surface region provided between the first magnetic side surface region and the semiconductor element in the second direction;
a second other magnetic side surface region provided between the fourth nonmagnetic side surface region and the semiconductor element in the second direction; and
a second other nonmagnetic side surface region provided between the second other magnetic side surface region and the semiconductor element in the second direction.

14 . The device according to claim 13 , wherein
the first member further includes:
a fifth nonmagnetic side surface region;
a third magnetic side surface region;
a sixth nonmagnetic side surface region;
a third other magnetic side surface region; and
a third other nonmagnetic side surface region,
the semiconductor element is provided between the second nonmagnetic side surface region and the fifth nonmagnetic side surface region in the third direction, the third magnetic side surface region is provided between the fifth nonmagnetic side surface region and the semiconductor element in the third direction, the sixth nonmagnetic side surface region is provided between the third magnetic side surface region and the semiconductor element in the third direction, the third other magnetic side surface region is provided between the sixth nonmagnetic side surface region and the semiconductor element in the third direction, and the third other nonmagnetic side surface region is provided between the third other magnetic side surface

Assignees

• Toshiba Kk

Inventors

• Kikitsu Akira
• Iwasaki Hitoshi
• Kurosaki Yoshinari

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W74/117

  the substrate having spherical bumps for external connection · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W70/635

  Through-vias · CPC title