Reduction of cracks in redistribution structure

Patent metadata

Field	Value
Publication number	US-12476178-B2
Application number	US-202217889122-A
Country	US
Kind code	B2
Filing date	Aug 16, 2022
Priority date	Aug 16, 2022
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

The present disclosure provides methods and structures to prevent cracks in redistribution layers. A redistribution structure according to the present disclosure includes a first polymer layer disposed over a silicon substrate, a first contact via disposed in the first polymer layer, a second polymer layer disposed over the first contact via, a first redistribution layer including a first conductive pad disposed on the second polymer layer and a second contact via extending through the second polymer layer to physical contact the first contact via, a third polymer layer disposed over the first redistribution layer, a second redistribution layer including a second conductive pad disposed on the third polymer layer and a plurality of third contact vias extending through the third polymer layer to physically contact the first conductive pad. The first conductive pad has at least one opening and the second conductive pad has at least one opening.

First claim

What is claimed is:

1 . A redistribution structure, comprising:
a first polymer layer disposed over a silicon substrate; a first contact via disposed in the first polymer layer; a second polymer layer disposed over the first contact via; a first redistribution layer comprising a first conductive pad disposed on the second polymer layer and a second contact via extending through the second polymer layer to physical contact the first contact via; a third polymer layer disposed over the first redistribution layer; and a second redistribution layer comprising a second conductive pad disposed on the third polymer layer and a plurality of third contact vias extending through the third polymer layer to physically contact the first conductive pad, wherein the plurality of third contact vias are adjacent a vertical projection area of the second contact via, wherein the second contact via comprises at least one via-edge opening along a rim of the second contact via, wherein the second conductive pad comprises at least one over-via opening directly over the second contact via.

2 . The redistribution structure of claim 1 , wherein the first polymer layer, the second polymer layer and the third polymer layer comprise polyimide (PI), polybenzoxazole (PBO), benzocyclobuten (BCB), epoxy, silicone, acrylates, nano-filled pheno resin, siloxane, fluorinated polymer, or polynorbornene.

3 . The redistribution structure of claim 1 , wherein the first contact via, the first redistribution layer and the second redistribution layer comprise copper (Cu).

4 . The redistribution structure of claim 1 ,
wherein the plurality of third contact vias comprise four (4) third contact vias, wherein the four (4) third contact vias form a quadrilateral from a top view, wherein a geographic center of the quadrilateral overlaps with the vertical projection area of the second contact via.

5 . The redistribution structure of claim 4 , wherein the quadrilateral comprises a square or an isosceles trapezoid.

6 . The redistribution structure of claim 1 ,
wherein the at least one via-edge opening comprises a first opening that falls within a vertical overlapping area of the first contact via and one of the plurality of third contact vias.

7 . The redistribution structure of claim 1 ,
wherein the at least one over-via opening comprises a second opening, wherein the second opening is substantially circular.

8 . The redistribution structure of claim 7 ,
wherein the second contact via is substantially circular and comprises a diameter, wherein the second opening comprises the diameter.

9 . A conductive structure, comprising:
a first contact via; a first polymer layer disposed over the first contact via; a first redistribution layer comprising a first conductive pad disposed on the first polymer layer and a second contact via extending through the first polymer layer to physical contact the first contact via; a second polymer layer disposed over the first redistribution layer; and a second redistribution layer comprising a second conductive pad disposed on the second polymer layer and a plurality of third contact vias extending through the second polymer layer to physically contact the first conductive pad, wherein the plurality of third contact vias surround a vertical projection area of the second contact via, wherein the second conductive pad comprises a first opening directly over the second contact via, wherein the plurality of third contact vias form a quadrilateral from a top view.

10 . The conductive structure of claim 9 , wherein the first polymer layer and the second polymer layer comprise polyimide (PI), polybenzoxazole (PBO), benzocyclobuten (BCB), epoxy, silicone, acrylates, nano-filled pheno resin, siloxane, fluorinated polymer, or polynorbornene.

11 . The conductive structure of claim 9 , wherein the first contact via, the first redistribution layer and the second redistribution layer comprise copper (Cu).

12 . The conductive structure of claim 9 ,
wherein a geographic center of the quadrilateral overlaps with the vertical projection area of the second contact via.

13 . The conductive structure of claim 9 , wherein the quadrilateral comprises a square or an isosceles trapezoid.

14 . The conductive structure of claim 9 ,
wherein the second contact via is substantially circular and comprises a diameter, wherein the first opening is substantially circular and comprises the diameter.

15 . The conductive structure of claim 9 , wherein the first contact via is disposed over a semiconductor substrate.

16 . A method, comprising:
forming a first redistribution layer (RDL) structure over a carrier substrate; forming a plurality of through vias over the first RDL structure; bonding an IC die to the first RDL structure; forming a molding layer over the first RDL structure, the plurality of through vias and the IC die; planarizing the molding layer to expose the plurality of through vias; and forming a second RDL structure over the planarized molding layer, wherein the forming of the second RDL structure comprises:
forming a first contact via over the IC die,
depositing first polymer layer over the first contact via,
forming a first redistribution layer comprising a first conductive pad disposed on the first polymer layer and a second contact via extending through the first polymer layer to physical contact the first contact via,
depositing a second polymer layer over the first redistribution layer, and
forming a second redistribution layer comprising a second conductive pad disposed on the second polymer layer and a plurality of third contact vias extending through the second polymer layer to physically contact the first conductive pad,
wherein the plurality of third contact vias surround a vertical projection area of the second contact via, wherein the second conductive pad comprises a first opening directly over the second contact via, wherein the plurality of third contact vias form a quadrilateral from a top view, wherein a geographic center of the quadrilateral overlaps with the vertical projection area of the second contact via.

17 . The method of claim 16 , further comprising:
forming under-bump metallization (UBM) features over the second RDL structure; forming solder features on a first subgroup of the UBM features; bonding a second die on a second subgroup of the UBM features; and after the bonding, mounting the solder features on a tape carrier.

18 . The method of claim 17 , further comprising:
depositing a lamination layer over the first RDL structure; forming openings through the lamination layer using laser drilling; and depositing a pre-solder features in the openings.

19 . The method of claim 16 , wherein the first polymer layer and the second polymer layer comprise polyimide (PI), polybenzoxazole (PBO), benzocyclobuten (BCB), epoxy, silicone, acrylates, nano-filled pheno resin, siloxane, fluorinated polymer, or polynorbornene.

20 . The method of claim 16 , wherein the second contact via comprises a plurality of second openings around a rim of the second contact via.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Kuo Ting-Ting
• Huang Li-Hsien
• Yang Tien-Chung
• Chuang Yao-Chun
• Lu Yinlung
• He Jun

Classifications

• H10W74/01

  Manufacture or treatment · CPC title

• H10W70/69

  Insulating materials thereof · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W42/121

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title