Etch back and film profile shaping of selective dielectric deposition

Patent metadata

Field	Value
Publication number	US-12476144-B2
Application number	US-202117544337-A
Country	US
Kind code	B2
Filing date	Dec 7, 2021
Priority date	Dec 7, 2021
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

Self-aligned semiconductor device structures and techniques for fabrication thereof are provided. In one aspect, a self-aligned semiconductor device structure includes: at least one first conductive element embedded in a first dielectric; a second dielectric disposed selectively on the first dielectric relative to the at least one first conductive element; and at least one second conductive element present in the second dielectric that is fully aligned with the at least one first conductive element. A liner can be disposed on the second dielectric and which separates the second dielectric from the at least one second conductive element. A method of forming a self-aligned semiconductor device structure is also provided.

First claim

What is claimed is:

1 . A structure, comprising:
at least one first conductive element embedded in a first dielectric; a second dielectric disposed selectively on the first dielectric relative to the at least one first conductive element; at least one second conductive element present in the second dielectric that is fully aligned with the at least one first conductive element; and a liner disposed on the second dielectric, wherein the liner is present along a top surface of the second dielectric and along only an upper portion of sidewalls of the at least one second conductive element such that the liner separates the upper portion of the at least one second conductive element from the second dielectric.

2 . The structure of claim 1 , wherein, at a juncture of the at least one first conductive element and the at least one second conductive element, sidewalls of the at least one first conductive element are aligned with sidewalls of the at least one second conductive element.

3 . The structure of claim 1 , wherein the liner comprises a material selected from the group consisting of: aluminum oxide (Al 2 O 3 ), zinc oxide (ZnO), titanium oxide (TiO 2 ), and combinations thereof.

4 . The structure of claim 1 , wherein the sidewalls of the at least one second conductive element are tapered such that a top of the at least one second conductive element has a width W 1 and a bottom of the at least one second conductive element has a width W 2 , and wherein W 1 >W 2 .

5 . The structure of claim 1 , wherein the sidewalls of the at least one second conductive element are bowed such that a top of the at least one second conductive element has a width W 1 , a bottom of the at least one second conductive element has a width W 2 , and a middle of the at least one second conductive element has a width W 3 , wherein W 3 >W 1 , and wherein W 3 >W 2 .

6 . The structure of claim 1 , wherein the first dielectric and the second dielectric each comprises a material selected from the group consisting of: silicon oxide (SiOx), organosilicate glass (SiCOH), carbon-rich SiCN, SiCNO, porous organosilicate glass (pSiCOH), pSiCN, pSiCNO and combinations thereof.

7 . The structure of claim 1 , wherein the at least one first conductive element and the at least one second conductive element comprise a metal selected from the group consisting of: copper (Cu), tungsten (W), cobalt (Co), ruthenium (Ru), copper manganese (CuMn), copper aluminum (CuAl), and combinations thereof.

8 . The structure of claim 1 , wherein the at least one first conductive element directly contacts the at least one second conductive element.

Assignees

• IBM

Inventors

• Wojtecki Rudy J
• Nguyen Son
• Pranatharthiharan Balasubramanian S
• Peethala Cornelius Brown

Classifications

• H10W20/0696

  by using sacrificial placeholders, e.g. using sacrificial plugs · CPC title

• H10W20/076

  in via holes or trenches · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title

• H10W20/0765

  the thin functional dielectric layers being temporary, e.g. sacrificial layers · CPC title