Molybdenum (0) precursors for deposition of molybdenum films

Patent metadata

Field	Value
Publication number	US-12473316-B2
Application number	US-202418743333-A
Country	US
Kind code	B2
Filing date	Jun 14, 2024
Priority date	Jan 12, 2021
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

First claim

What is claimed is:

1 . A method of depositing a film, the method comprising:
exposing a substrate to a metal coordination complex consisting of a molybdenum(0) precursor having a general formula of Mo(L) z , wherein z is 2, and L is selected from the group consisting of

 wherein each R is independently selected from Me-, Et-, iPr-, and tBu-, and wherein the metal coordination complex is substantially free of halogens and carbonyl groups; and
exposing the substrate to a reactant to react with the molybdenum(0) precursor to form a molybdenum film on the substrate.

2 . The method of claim 1 , wherein the molybdenum film comprises one or more of a molybdenum metal (elemental Mo) film, a molybdenum oxide film, a molybdenum carbide film, a molybdenum silicide film, and a molybdenum nitride film.

3 . The method of claim 1 , wherein the substrate is exposed to the molybdenum(0) precursor and the reactant sequentially.

4 . The method of claim 1 , wherein the substrate is exposed to the molybdenum(0) precursor and the reactant simultaneously.

5 . The method of claim 1 , further comprising purging the substrate of the molybdenum(0) precursor prior to exposing the substrate to the reactant.

6 . The method of claim 5 , further comprising purging the substrate of the reactant and repeating the method to provide a molybdenum film having a thickness in a range of from about 0.3 nm to about 100 nm.

Assignees

• Applied Materials Inc
• Nat Univ Singapore

Inventors

• Leoncini Andrea
• Mehlmann Paul
• Dordevic Nemanja
• Huynh Han Vinh
• Yong Doreen Wei Ying
• Saly Mark
• Bhuyan Bhaskar Jyoti

Classifications

• C23C16/0209

  by heating · CPC title

• C23C16/0254

  Physical treatment to alter the texture of the surface, e.g. scratching or polishing · CPC title

• C23C16/0227

  by cleaning or etching · CPC title

• C23C16/56

  After-treatment · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title