Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-12456632-B2
Application number	US-202217814267-A
Country	US
Kind code	B2
Filing date	Jul 22, 2022
Priority date	Jul 26, 2021
Publication date	Oct 28, 2025
Grant date	Oct 28, 2025

Abstract

A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substrate processing method includes: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along a surface of the substrate. The flowing of the processing fluid includes flowing the processing fluid in a first flow mode and flowing the processing fluid in a second flow mode. Between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid is different, and a switchover between the first flow mode and the second flow mode is performed by the flow control device.

First claim

We claim:

1. A substrate processing method of drying a substrate, which has a liquid adhering to a surface thereof, by using a processing fluid in a supercritical state,
wherein the substrate processing method is performed by using a substrate processing apparatus,
the substrate processing apparatus comprises:
a processing vessel;
a substrate holder configured to hold the substrate horizontally within the processing vessel such that the surface of the substrate faces upwards;
a fluid discharge unit configured to discharge the processing fluid into the processing vessel;
a fluid drain unit configured to drain the processing fluid from the processing vessel;
a supply line, connected to the fluid discharge unit, through which the processing fluid is supplied to the fluid discharge unit from a fluid source configured to supply the processing fluid in the supercritical state;
a drain line connected to the fluid drain unit; and
a flow control device provided in at least one of the supply line or the drain line, and configured to control a flow of the processing fluid flowing within the processing vessel from the fluid discharge unit toward the fluid drain unit, and
wherein the fluid drain unit comprises a manifold having, between a first end and a second end thereof, multiple outlet openings arranged at a distance therebetween in a horizontal direction; the drain line comprises a first sub-drain line and a second sub-drain line connected to the first end and the second end of the manifold, respectively; each of the first sub-drain line and the second sub-drain line is provided with a drain flow control device; and the drain flow control device constitutes at least a part of the flow control device,
wherein the substrate processing method comprises: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along the surface of the substrate held by the substrate holder,
the flowing of the processing fluid comprises flowing the processing fluid in a first flow mode in the processing vessel and flowing the processing fluid in a second flow mode in the processing vessel,
between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid flowing along the surface of the substrate in the processing vessel is different when viewed from a direction normal to the surface of the substrate, and
a switchover between the first flow mode and the second flow mode is performed by the flow control device,
by using the drain flow control device, in the first flow mode, a drain flow rate of the processing fluid into the first sub-drain line through the manifold is set to be smaller than a drain flow rate of the processing fluid into the second sub-drain line through the manifold, and
by using the drain flow control device, in the second flow mode, a drain flow rate of the processing fluid into the first sub-drain line through the manifold is set to be larger than a drain flow rate of the processing fluid into the second sub-drain line through the manifold.

2. The substrate processing method of claim 1 ,
wherein the flowing of the processing fluid in the first flow mode and the flowing of the processing fluid in the second flow mode are repeated alternately.

3. The substrate processing method of claim 1 ,
wherein when viewed from the direction normal to the surface of the substrate, a flow of the processing fluid in the first flow mode and a flow of the processing fluid in the second flow mode intersect with each other.

4. The substrate processing method of claim 3 ,
wherein when viewed from the direction normal to the surface of the substrate, the flow direction distribution in the first flow mode and the flow direction distribution in the second flow mode are mirror-symmetrical with respect to a straight line passing through a center of the substrate.

5. The substrate processing method of claim 1 ,
wherein the fluid discharge unit comprises a nozzle body having, between a first end and a second end thereof, multiple discharge openings arranged at a distance therebetween in a horizontal direction; the supply line comprises a first sub-supply line and a second sub-supply line connected to the first end and the second end of the nozzle body, respectively; each of the first sub-supply line and the second sub-supply line is provided with a supply flow control device; and the supply flow control device constitutes at least a part of the flow control device,
by using the supply flow control device, in the first flow mode, a supply flow rate of the processing fluid from the first sub-supply line to the nozzle body is set to be larger than a supply flow rate of the processing fluid from the second sub-supply line to the nozzle body, and
by using the supply flow control device, in the second flow mode, a supply flow rate of the processing fluid from the first sub-supply line to the nozzle body is set to be smaller than a supply flow rate of the processing fluid from the second sub-supply line to the nozzle body.

6. The substrate processing method of claim 5 ,
wherein the supply flow control device provided in each of the first sub-supply line and the second sub-supply line is an opening/closing valve; in the first flow mode, the opening/closing valve of the first sub-supply line is opened whereas the opening/closing valve of the second sub-supply line is closed; and in the second flow mode, the opening/closing valve of the first sub-supply line is closed whereas the opening/closing valve of the second sub-supply line is opened.

7. The substrate processing method of claim 5 ,
wherein the supply flow control device provided in each of the first sub-supply line and the second sub-supply line is a valve with a variable opening degree; in the first flow mode, the opening degree of the valve of the first sub-supply line is set to be larger than the opening degree of the valve of the second sub-supply line; and in the second flow mode, the opening degree of the valve of the first sub-supply line is set to be smaller than the opening degree of the valve of the second sub-supply line.

8. The substrate processing method of claim 5 ,
wherein when viewed from the direction normal to the surface of the substrate, the nozzle body and the manifold are disposed to be opposite to each other with the substrate therebetween and in parallel to each other.

9. The substrate processing method of claim 1 ,
wherein the drain flow control device provided in each of the first sub-drain line and the second sub-drain line is an opening/closing valve; in the first flow mode, the opening/closing valve of the first sub-drain line is closed whereas the opening/closing valve of the second sub-drain line is opened; and in the second flow mode, the opening/closing valve of the first sub-drain line is opened whereas the opening/closing valve of the second sub-drain line is closed.

10. The substrate processing method of claim 1 ,
wherein the drain flow control device provided in each of the first sub-drain line and the second sub-drain line is a valve with a variable opening degree; in the first flow mode, the opening degree of the valve of the first sub-drain line is set to be smaller than the opening degree of the valve of the second sub-drain line; and in the second flow mode, the opening degree of the valve of the first sub-drain line is set to be larger than the opening degree of the valve of the second sub-drain line.

11. The substrate processing method of claim 1 ,
wherein the fluid discharge unit comprises a first discharging element and a second discharging element that are separately provided,
the supply line comprises a f

Assignees

• Tokyo Electron Ltd

Inventors

• Inoue Saya
• Tanaka Satoru
• Shimomura Shinichiro
• Ihara Toru
• Biwa Satoshi

Classifications

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P72/0408 Primary

  for drying · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H01L21/02052

  Electricity · mapped topic

• H01L21/67034 Primary

  Electricity · mapped topic