Semiconductor device sensor unit

Patent metadata

Field	Value
Publication number	US-12444779-B2
Application number	US-201917291021-A
Country	US
Kind code	B2
Filing date	Nov 13, 2019
Priority date	Nov 26, 2018
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

A novel semiconductor device that is highly convenient or reliable is provided.
The semiconductor device includes a sensor unit, a first memory unit, a second memory unit, and a determination unit. The sensor unit supplies a sensor signal, the first memory unit retains the sensor signal, the second memory unit retains standard data and allowable difference information, the determination unit compares the sensor signal with the standard data, and the determination unit supplies a control signal in the case where a difference between the sensor signal and the standard data exceeds the allowable difference information.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a sensor unit;
a first memory unit;
a second memory unit; and
a determination unit,
wherein the sensor unit supplies a sensor signal representing charging current and charging voltage obtained from a secondary battery,
wherein the first memory unit retains the sensor signal as analog data,
wherein the second memory unit retains standard data as analog data and allowable difference information as analog data,
wherein the standard data are average data of an electrically-connected load obtained by sampling charging characteristics performed more than once,
wherein the determination unit compares the sensor signal with the standard data, and
wherein the determination unit supplies a control signal in a case where a difference between the sensor signal and the standard data exceeds the allowable difference information.

2. The semiconductor device according to claim 1 , further comprising a control unit,
wherein the control unit supplies a selection signal,
wherein the first memory unit comprises a group of memory elements and a selection circuit,
wherein the group of memory elements comprises a memory element,
wherein the memory element retains the sensor signal, and
wherein the selection circuit selects the memory element in accordance with the selection signal.

3. The semiconductor device according to claim 2 , wherein the selection circuit comprises a switch.

4. The semiconductor device according to claim 2 , wherein the selection circuit comprises a source follower circuit.

5. The semiconductor device according to claim 2 ,
wherein the memory element comprises a semiconductor layer, and
wherein the semiconductor layer comprises an oxide semiconductor.

6. A semiconductor device comprising:
a first semiconductor device; and
a second semiconductor device,
wherein the second semiconductor device is the semiconductor device according to claim 1 ,
wherein the first semiconductor device is capable of supplying a predetermined current or a predetermined voltage,
wherein the first semiconductor device is electrically connected to the second semiconductor device,
wherein the first semiconductor device is supplied with the control signal, and
wherein the first semiconductor device operates in accordance with the control signal.

7. The semiconductor device according to claim 6 ,
wherein the sensor unit comprises a voltage sensor,
wherein the voltage sensor measures a voltage required when the predetermined current is supplied, and
wherein the second memory unit retains standard data on voltage.

8. The semiconductor device according to claim 6 ,
wherein the sensor unit comprises a current sensor,
wherein the current sensor measures a current required when the predetermined voltage is supplied, and
wherein the second memory unit retains standard data on current.

9. The semiconductor device according to claim 6 ,
wherein the sensor unit comprises a terminal,
wherein the terminal is supplied with a sensor signal related to temperature, and
wherein the second memory unit retains standard data on temperature.

Assignees

• Semiconductor Energy Lab

Inventors

• Matsuzaki Takanori
• Ikeda Takayuki
• Kozuma Munehiro
• Tajima Ryota
• Inoue Hiroki

Classifications

• H02J7/975

  in response to temperature · CPC title

• H02J7/80

  including monitoring or indicating arrangements · CPC title

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H01M10/48

  Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte (constructional details of current conducting connections for detecting conditions inside cells or batteries, e.g. details of voltage sensing terminals, H01M50/569) · CPC title

• H10D88/00

  Three-dimensional [3D] integrated devices · CPC title