Assembly and method for performing in-situ endpoint detection when backside milling silicon based devices

Patent metadata

Field	Value
Publication number	US-12444658-B2
Application number	US-202217708329-A
Country	US
Kind code	B2
Filing date	Mar 30, 2022
Priority date	May 23, 2019
Publication date	Oct 14, 2025
Grant date	Oct 14, 2025

Abstract

An assembly for monitoring a semiconductor device under test comprising a mill configured to mill the device, a sensor configured to measure an electrical characteristic of the device, and a computer configured to determine the amount of strain in the device from the electrical characteristic when the mill is milling the device and detect an endpoint of milling at a circuit within the device. In use the endpoints of the milling process of the semiconductor device are detected measuring an electrical characteristic of the device with a sensor during milling determining the amount of strain in the device from the electrical characteristic and detecting an endpoint of the milling process within the device based on the amount of strain.

First claim

What is claimed is:

1. An assembly for monitoring a semiconductor device during milling comprising:
a micromill, wherein:
the micromill configured to hold a socket,
the socket configured to receive the semiconductor device,
the micromill employing milling fluid,
the semiconductor device including electrical contacts, and
the socket preventing contamination of the electrical contacts by the milling fluid;

a signal generator configured to send a signal to the semiconductor device to produce an electrical characteristic of the semiconductor device;
a sensor configured to sense the electrical characteristic during milling of the semiconductor device in a mill and provide a sensor output representative of the electrical characteristic, the mill including a support for the semiconductor device that moves in X, Y and Z directions of a milling surface, and
a computer configured to stop the milling based on the sensor output.

2. The assembly of claim 1 , wherein the computer is further configured to regulate the mill when the semiconductor device is undergoing milling and determine an amount of silicon left between the milling machine and a circuit located in the semiconductor device based on the electrical characteristic.

3. The assembly of claim 1 , wherein the socket immobilizes the semiconductor device with respect to the micromill and allows access to a backside of the semiconductor device and the semiconductor device is an integrated circuit.

4. The assembly of claim 1 , wherein the signal generator is connected to the socket when the socket is placed in the micromill.

5. The assembly of claim 1 , wherein the signal generator is configured to apply a clock or a power waveform to the semiconductor device.

6. The assembly of claim 1 , wherein the signal generator is connected to the semiconductor device by lead wires.

7. The assembly of claim 1 further comprising a printed circuit board wherein the semiconductor device is soldered to the printed circuit board.

8. The assembly of claim 1 , wherein the sensor is an electrical signal recording device.

9. The assembly of claim 1 , wherein the sensor is a current or a voltage sensor connected to a digital to analog converter.

10. The assembly of claim 1 , wherein the mill is a micromill including the support for the semiconductor device that moves in both X and Y directions of a milling surface, a feed motor which moves the support in a Z direction normal to the milling surface and a sensor for determining an amount of force applied to the semiconductor device.

11. An assembly for monitoring a semiconductor device during milling of the semiconductor device, the assembly comprising:
a sensor configured to sense an electrical characteristic of the semiconductor device during milling in a mill and provide a sensor output representative of the electrical characteristic, wherein the sensor is an RF sensor coupled to the semiconductor device by an antenna; and
a computer configured to:
determine a second order effect on a power draw of the semiconductor device from the sensor output; and
stop the milling before a circuit within the semiconductor device is damaged based on the second order effect on the power draw.

12. A method of milling a semiconductor device, the semiconductor device including a circuit, the method comprising:
determining a second order effect on a power draw of the semiconductor device during milling in a mill from an output of a sensor representative of an electrical characteristic of the semiconductor device and an amount of strain in the semiconductor device, wherein the electrical characteristic is an analog measurement of power versus time and further comprising segmenting the analog measurement of power versus time into a vector;
conducting a machine learning technique to the vector to relate a power measurement to strain in the semiconductor device; and
stopping the milling based on the strain in the semiconductor device.

13. The method according to claim 12 further comprising sending a signal to the semiconductor device to generate the electrical characteristic.

14. The method according to claim 12 further comprising determining a thickness of a remaining silicon being milled based on the strain in the semiconductor device and controlling the milling based on the power measurement to stop milling when the thickness of the remaining silicon becomes too thin and before the circuit is damaged.

Assignees

• Battelle Memorial Institute

Inventors

• Schley Jeremiah J
• Kent Thomas
• Liszewski Katie T
• Goldthwaite Isaac

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title