Assembly and method for performing in-situ endpoint detection when backside milling silicon based devices

Patent metadata

Field	Value
Publication number	US-11315840-B2
Application number	US-202016881848-A
Country	US
Kind code	B2
Filing date	May 22, 2020
Priority date	May 23, 2019
Publication date	Apr 26, 2022
Grant date	Apr 26, 2022

Abstract

An assembly for monitoring a semiconductor device under test comprising a mill configured to mill the device, a sensor configured to measure an electrical characteristic of the device, and a computer configured to determine the amount of strain in the device from the electrical characteristic when the mill is milling the device and detect an endpoint of milling at a circuit within the device. In use the endpoints of the milling process of the semiconductor device are detected measuring an electrical characteristic of the device with a sensor during milling determining the amount of strain in the device from the electrical characteristic and detecting an endpoint of the milling process within the device based on the amount of strain.

First claim

What is claimed is:

1. An assembly for monitoring a semiconductor device during milling comprising:
a socket configured to receive the semiconductor device;
a sensor configured to measure an electrical characteristic of the semiconductor device during milling in a mill, and
a computer configured to determine an amount of strain in the semiconductor device from the electrical characteristic when the mill is milling the semiconductor device and to detect when the milling should stop before a circuit within the semiconductor device is damaged.

2. The assembly of claim 1 , wherein the computer is further configured to regulate the mill when the semiconductor device is undergoing milling and determine an amount of silicon left between the milling machine and a circuit located in the semiconductor device based on the electrical characteristic.

3. The assembly of claim 1 wherein the mill is a micromill configured to hold the socket.

4. The assembly of claim 3 , wherein the socket immobilizes the semiconductor device with respect to the micromill and allows access to a backside of the semiconductor device and the semiconductor device is an integrated circuit.

5. The assembly of claim 3 , wherein the micromill employs milling fluid, the semiconductor device includes electrical contacts and the socket prevents contamination of the electrical contacts by the milling fluid.

6. The assembly of claim 3 further comprising a signal generator configured to send a signal to the semiconductor device and produce the electrical characteristic.

7. The assembly of claim 6 , wherein the signal generator is connected to the socket when the socket is placed in the micromill.

8. The assembly of claim 1 further comprising a signal generator configured to send a signal to the semiconductor device and produce the electrical characteristic which is related to a second order effect of a power draw of the silicon device.

9. The assembly of claim 8 , wherein the signal generator is configured to apply a clock or a power waveform to the semiconductor device.

10. The assembly of claim 8 , wherein the signal generator is connected to the semiconductor device by lead wires.

11. An assembly for monitoring a semiconductor device soldered to a printed circuit board during milling comprising:
a sensor configured to measure an electrical characteristic of the semiconductor device during milling in a mill; and
a computer configured to determine an amount of strain in the semiconductor device from the electrical characteristic when the mill is milling the semiconductor device and to detect when the milling should stop before a circuit within the semiconductor device is damaged.

12. The assembly of claim 1 , wherein the sensor is an electrical signal recording device.

13. The assembly of claim 1 , wherein the sensor is a current or a voltage sensor connected to a digital to analog converter.

14. The assembly of claim 1 , wherein the sensor is an RF sensor.

15. The assembly of claim 1 , wherein the mill is a micromill including a support for the semiconductor device that moves in both X and Y directions of a milling surface, a feed motor which moves the support in a Z direction normal to the milling surface and a sensor for determining an amount of force applied to the semiconductor device.

16. A method of milling a semiconductor device soldered to a printed circuit board, the semiconductor device including a circuit, said method comprising:
measuring an electrical characteristic of the semiconductor device with a sensor during milling in a mill;
detecting an amount of strain in the semiconductor device from the electrical characteristic; and
determining when to stop milling based on the amount of strain.

17. The method according to claim 16 , wherein the electrical characteristic is an analog measurement of power versus time and further comprising segmenting the analog measurement of power versus time into a vector.

18. The method according to claim 17 further comprising conducting a machine learning technique to the vector to relate a power measurement to strain in the semiconductor device.

19. The method according to claim 18 further comprising determining a thickness of the remaining silicon being milled based on the strain in the semiconductor device and controlling the milling based on the power measurement to stop milling when the thickness of the silicon becomes too thin and before the circuit is damaged and wherein the power measurement is a second order effect on a power draw of the semiconductor device.

Assignees

• Battelle Memorial Institute

Inventors

• Schley Jeremiah J
• Kent Thomas
• Liszewski Katie
• Goldthwaite Isaac

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title