Electronic module including a semiconductor package disposed on an interposer layer

Patent metadata

Field	Value
Publication number	US-12438063-B2
Application number	US-202418583955-A
Country	US
Kind code	B2
Filing date	Feb 22, 2024
Priority date	Jan 20, 2020
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

An electronic module includes a semiconductor package including a die carrier, a semiconductor transistor die disposed on the die carrier, an electrical conductor connected to the semiconductor die, and an encapsulant covering the die carrier, the semiconductor die, and the electrical conductor so that a portion of the electrical conductor extends to the outside of the encapsulant. The electronic module further includes an interposer layer on which the semiconductor package is disposed, and a heat sink through which a cooling medium can flow. The interposer layer is disposed on the heatsink.

First claim

What is claimed is:

1. An electronic module, comprising:
a semiconductor package comprising a die carrier, a semiconductor die disposed on the die carrier, an electrical conductor connected to the semiconductor die, and an encapsulant covering the die carrier, the semiconductor die, and the electrical conductor so that a portion of the electrical conductor extends to the outside of the encapsulant;
an interposer layer, wherein the semiconductor package is disposed on the interposer layer; and
a heat sink,
wherein the interposer layer is disposed on the heatsink,
wherein the semiconductor package is soldered, diffusion soldered, or sintered onto the interposer layer, or connected to the interposer layer by a conductive glue or a silver conductive glue.

2. The electronic module of claim 1 , wherein the die carrier is one of a portion of a leadframe, an isolated metal substrate, a direct copper bond substrate, or an active metal braze substrate.

3. The electronic module of claim 1 , wherein the interposer layer is one of an isolated metal substrate, a direct copper bond substrate, or an active metal braze substrate.

4. The electronic module of claim 1 , wherein the interposer layer is embedded in an upper main face of the heatsink.

5. The electronic module of claim 1 , wherein the interposer layer is soldered, diffusion soldered, or sintered onto the heatsink, or connected to the heatsink by a glue, a conductive glue or a silver glue.

6. The electronic module of claim 1 , wherein the semiconductor die is one or more of a wide band gap semiconductor die, a SiC die, or a GaN die.

7. The electronic module of claim 1 , wherein the semiconductor die is one or more of a wide band gap semiconductor die, a SiC die, or a GaN die.

8. The electronic module of claim 1 , further comprising two or more semiconductor packages.

9. The electronic module of claim 8 , wherein the two of more semiconductor packages are connected with each other to form one or more of a DC/DC circuit, a DC/AC circuit, an AC/DC circuit, a half-bridge circuit, a full-bridge circuit, or a Vienna rectifier circuit.

10. The electronic module of claim 1 , further comprising:
two or more interposer layers,
wherein at least one interposer layer carries only one semiconductor package, and
wherein at least one interposer layer carries two or more semiconductor packages.

11. The electronic module of claim 10 , wherein the two or more semiconductor packages are connected with each other to form one or more of a DC/DC circuit, a DC/AC circuit, an AC/DC circuit, a half-bridge circuit, a full-bridge circuit, or a Vienna rectifier circuit.

12. The electronic module of claim 1 , wherein the semiconductor package is one or more of a discrete or standardized package, a discrete or standardized power package, a TO package, a TO220 package, a TO247 package, a TO263 package, or a D2PAK package.

13. The electronic module of claim 1 , wherein the heatsink comprises a first main face and a second main face opposite to the first main face, wherein the semiconductor package is disposed on the first main face of the heatsink, and wherein an additional semiconductor package is disposed on the second main face of the heatsink.

14. The electronic module of claim 1 , wherein the cooling medium is nonconductive.

15. The electronic module of claim 1 , wherein the heatsink is one or more of conductive, nonconductive, organic, or inorganic.

16. The electronic module of claim 1 , wherein an inner volume of the electronic module is filled with a further encapsulant.

17. The electronic module of claim 1 , further comprising a control board including one or more controller chips which control an electronic circuit which includes the semiconductor die of the semiconductor package.

18. The electronic module of claim 1 , further comprising connectivity devices configured to connect the electronic module to external entities.

19. An electronic module, comprising:
a semiconductor package comprising a die carrier, a semiconductor die disposed on the die carrier, an electrical conductor connected to the semiconductor die, and an encapsulant covering the die carrier, the semiconductor die, and the electrical conductor so that a portion of the electrical conductor extends to the outside of the encapsulant;
an interposer layer, wherein the semiconductor package is disposed on the interposer layer; and
a heat sink,
wherein the interposer layer is disposed on the heatsink,
wherein the interposer layer is one of an isolated metal substrate (IMS), a direct copper bond (DCB) substrate or an active metal braze (AMB) substrate having a first side attached to the die carrier and a second side attached to or embedded in the heat sink.

20. An electronic module, comprising:
a semiconductor package comprising a die carrier, a semiconductor die disposed on the die carrier, an electrical conductor connected to the semiconductor die, and an encapsulant covering the die carrier, the semiconductor die, and the electrical conductor so that a portion of the electrical conductor extends to the outside of the encapsulant;
an interposer layer, wherein the semiconductor package is disposed on the interposer layer; and
a heat sink,
wherein the interposer layer is disposed on the heatsink,
wherein the semiconductor package is soldered, diffusion soldered, or sintered onto the interposer layer, or connected to the interposer layer by a conductive glue or a silver conductive glue,
wherein the die carrier is thicker than the interposer layer.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Fuergut Edward
• Chiola Davide
• Gruber Martin
• Hable Wolfram

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W90/288

  characterised by arrangements for thermal management of the stacked chips · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W70/40

  Leadframes · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title