High frequency and high power thin-film component
US-12543329-B2 · Feb 3, 2026 · US
US12437904B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12437904-B2 |
| Application number | US-202118022926-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 16, 2021 |
| Priority date | Aug 31, 2020 |
| Publication date | Oct 7, 2025 |
| Grant date | Oct 7, 2025 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ·m.
Opening claim text (preview).
What is claimed is: 1. A resistance alloy for use in a current detection shunt resistor, the resistance alloy being a quaternary alloy consisting of copper, manganese, silicon, and iron, and comprising 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and having a specific resistance of 15 to 25 μΩ·cm, wherein a silicon oxide is formed on a surface of the resistance alloy. 2. The resistance alloy according to claim 1 , having a temperature coefficient of resistance (“TCR”) less than or equal to 100×10 −6 /K. 3. The resistance alloy according to claim 1 , having a thermal electromotive force with respect to copper within ±μV/K. 4. Use of the resistance alloy according to claim 1 , in a resistive body of a shunt resistor for use in a current detection device. 5. A current detection shunt resistor comprising a resistive body and an electrode, wherein the resistive body is a quaternary alloy consisting of copper, manganese, silicon, and iron, and comprising 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and having a specific resistance of 15 to 25 μΩ·cm, and wherein a silicon oxide is formed on a surface of the resistive body.
current-responsive · CPC title
of copper or alloys based thereon · CPC title
in inert or controlled atmosphere or vacuum (adjusting the composition of the atmosphere C21D1/76) · CPC title
with manganese as the next major constituent · CPC title
Apparatus or processes specially adapted for the manufacture {or maintenance} of measuring instruments {, e.g. of probe tips} · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.