Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-12435439-B2
Application number	US-202318188177-A
Country	US
Kind code	B2
Filing date	Mar 22, 2023
Priority date	Apr 28, 2022
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.

First claim

What is claimed is:

1. A substrate processing method comprising:
(a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature;
(b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and
(c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.

2. The method of claim 1 , wherein (b) is performed during a temperature elevation from the first temperature to the second temperature.

3. The method of claim 1 , wherein an insulating film is formed on a surface of the substrate, and a recess whose bottom surface includes the surface of the substrate is provided in the insulating film,
wherein, in (a), the first film is formed on the bottom surface and a side surface of the recess and
wherein, in (c), the Group 14 element contained in the first film is moved toward the bottom surface of the recess.

4. The method of claim 3 , wherein, in (c), the first film is continuously crystallized from the bottom surface of the recess to an upper portion of the side surface of the recess.

5. The method of claim 1 , wherein, in (a), the first film further containing a Group 13 element or a Group 15 element is formed by supplying a first gas containing the Group 14 element and a second gas containing the Group 13 element or the Group 15 element to the substrate.

6. The method of claim 5 , wherein, in (c), the heat treatment is performed by supplying the second gas.

7. The method of claim 1 , further comprising
(d) forming a second film containing the Group 14 element on the substrate before (a).

8. The method of claim 7 , wherein the second film contains the Group 14 element and another Group 14 element different from the Group 14 element.

9. The method of claim 7 , wherein the substrate is provided with a recess on a surface thereof, a first surface whose main constituent is the Group 14 element is provided on a bottom surface of the recess, and a second surface constituted by an insulator is provided on a side surface of the recess.

10. The method of claim 9 , wherein the second film is formed on the first surface.

11. The method of claim 1 , wherein, in (a), the first film is formed on a surface of the substrate whose main constituent is the Group 14 element.

12. The method of claim 1 , wherein, in (a), the first film in an amorphous state, a polycrystalline state or a mixed crystal state of the amorphous state and the polycrystalline state is formed.

13. The method of claim 1 , wherein, in (b), the crystal growth of the first film comprises an epitaxial growth.

14. The method of claim 13 , wherein the epitaxial growth comprises a solid phase epitaxial growth.

15. The method of claim 1 , wherein (a) is performed under conditions that enable a crystal growth of at least part of the first film.

16. The method of claim 1 , wherein, in (a), a crystal growth is enabled in at least part of the first film adjacent or close to the substrate.

17. The method of claim 16 , wherein the substrate comprises a monocrystalline structure, and the first film is formed on the monocrystalline structure,
wherein the substrate is provided with an insulating film, and
wherein, in (a), the crystal growth is enabled in at least part of the first film adjacent or close to a surface of the monocrystalline structure, and at least part of the first film adjacent or close to a surface of the insulating film is in an amorphous state, a polycrystalline state or a mixed crystal state of the amorphous state and the polycrystalline state.

18. A method of manufacturing a semiconductor device on the substrate, comprising the method of claim 1 .

19. A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus, by a computer, to perform:
(a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature;
(b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and
(c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature after (b).

20. A substrate processing apparatus comprising:
a first supplier through which a Group 14 element-containing gas is supplied to a substrate;
a heater configured to heat the substrate; and
a controller configured to control the first supplier and the heater so as to perform:
(a) forming a first film containing a Group 14 element on the substrate at a film-forming temperature,
(b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature, and
(c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.

Assignees

• Kokusai Electric Corp

Inventors

• Miyakura Takahiro
• Moriya Atsushi
• Megawa Yasuhiro
• Koshi Yasunobu
• Hirano Akito

Classifications

• H10P14/3404

  being Group IVA materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3456

  Polycrystalline · CPC title