Method for recording a state of a CVD reactor under production conditions

Patent metadata

Field	Value
Publication number	US-12435422-B2
Application number	US-202017593423-A
Country	US
Kind code	B2
Filing date	Mar 20, 2020
Priority date	Mar 21, 2019
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

During a process involving one or more process steps of a process phase, in which a substrate is located in the process chamber of a CVD reactor, a process temperature and a pressure are each set and a process gas flow is fed into the process chamber by way of control data delivered by a controller in accordance with a formula stored in the controller. Additionally, sensors are used to determine measurement data from which a current fingerprint is calculated and then compared with a historic fingerprint. The fingerprint includes only values or groups of values that are obtained from measured values that are recorded during one or more conditioning steps of a conditioning phase in which a conditioning temperature and a conditioning pressure are each set and a conditioning gas flow is fed into the process chamber in accordance with control data specified by the formula.

First claim

What is claimed is:

1. A method for operating a chemical vapor deposition (CVD) reactor ( 1 ) having a process chamber ( 3 ) and a cooling device ( 22 ), the process chamber ( 3 ) including a process chamber ceiling ( 18 ) that is separated from the cooling device ( 22 ) by a gap ( 20 ), the method comprising:
during each of one or more process steps (R 1 , R 2 , R 3 ) of a process phase (PR), in which a substrate ( 2 ) is located in the process chamber ( 3 ), and in accordance with first control data that is varied by a user and stored in a controller ( 10 ), setting by the controller ( 10 ) at least one process temperature (T) and one process pressure (P), and feeding a process gas flow (Q) into the process chamber ( 3 );
before or after the process phase (PR), and during at least one of one or more conditioning steps (C 1 . 1 , C 1 . 2 , C 1 . 3 ) of a conditioning phase (PC, PC′), setting by the controller ( 10 ) at least one conditioning temperature (T) and one conditioning pressure (P), and controlling by the controller ( 10 ) a flow of conditioning gas flow (Q) into the process chamber ( 3 ) in accordance with second control data that is stored in an invariable manner in the controller ( 10 ), the second control data specifying, for the at least one conditioning step (C 1 . 1 , C 1 . 2 , C 1 . 3 ), a percent of hydrogen in a hydrogen/nitrogen mixture of purge gas fed into the gap ( 20 ) between the cooling device ( 22 ) and the process chamber ceiling ( 18 ), wherein no substrates ( 2 ) are located in the process chamber ( 3 ) during the conditioning phase (PC, PC′);
determining a current fingerprint only from data measured by a plurality of sensors during the at least one conditioning step (C 1 . 1 , C 1 . 2 , C 1 . 3 );
comparing the current fingerprint with a historical fingerprint derived only from data measured from a previous conditioning step, the previous conditioning step carried out at the at least one conditioning temperature (T), one conditioning pressure (P) and in accordance with the second control data that is stored in the invariable manner in the controller ( 10 ); and
based on results of the comparison of the current fingerprint with the historical fingerprint, determining deviations of a current state of the CVD reactor from a setpoint state, and providing information to the user for the user to plan maintenance and servicing measures for the CVD reactor.

2. The method of claim 1 , wherein the conditioning phase (PC, PC′) has first conditioning steps (C 1 . 1 , C 1 . 2 , C 1 . 3 ) and second conditioning steps (C 2 . 1 , C 2 . 2 ), wherein the current fingerprint is determined from data measured by the plurality of sensors during the first conditioning steps (C 1 . 1 , C 1 . 2 , C 1 . 3 ), and wherein third control data of the first conditioning steps (C 1 . 1 , C 1 . 2 , C 1 . 3 ) are stored in the invariable manner in the controller ( 10 ).

3. The method of claim 1 , wherein the current fingerprint comprises one or more of cooling water temperatures, temperatures of temperature control baths ( 14 ), flow rates, temperatures of pumps, gas lines or fluid lines, temperatures measured in an exhaust gas flow or control cabinet exhaust air ( 17 ), or gas concentration values.

4. The method of claim 1 , wherein one or more of the current fingerprint or the historical fingerprint are obtained by a statistical evaluation of measured data, and wherein the statistical evaluation comprises computing one or more of statistical mean values, minimum values, maximum values, and standard deviations.

5. The method of claim 1 , wherein the at least one or more conditioning step (C 1 . 1 , C 1 . 2 , C 1 . 3 ) comprises a temperature control step, in which a temperature control gas, or hydrogen, is fed into the process chamber ( 3 ) at a temperature in a range between 70° and 1200° C.

6. The method of claim 1 , further comprising performing a maintenance event (W) prior to the conditioning phase (PC, PC′), during which ambient air is introduced into the process chamber ( 3 ), wherein the current fingerprint comprises a thermal fingerprint.

7. The method of claim 1 , wherein the comparison of the current fingerprint with the historical fingerprint is carried out in accordance with a rule-based decision system.

8. The method of claim 1 , wherein at least one value of the current fingerprint is calculated from at least one of:
(i) a series of measurements obtained successively over time, and
(ii) a derivative with respect to time formed from the data measured by the sensors.

9. The method of claim 1 , wherein the conditioning phase (PC, PC′) comprises one or more of:
a plurality of conditioning steps that are performed one after another; and
a plurality of conditioning steps that are sequentially carried out at temperatures increasing or decreasing in a stepwise manner, and/or with changing cooling parameters.

10. The method of claim 1 , wherein the measured data comprise a process chamber ceiling temperature (TC), and wherein during the conditioning phase (PC, PC′), a temperature of a susceptor (TS) and thermal conductivities of gap regions are successively modified so as to control a heat flux (H 1 , H 2 , H 3 , H 4 ) from a heating device ( 6 ) to the cooling device ( 22 ).

11. The method of claim 1 , wherein the at least one conditioning step (C 1 . 1 , C 1 . 2 , C 1 . 3 ) is performed with process parameters that are held constant throughout the at least one conditioning step (C 1 . 1 , C 1 . 2 , C 1 . 3 ).

12. The method of claim 1 , wherein the at least one conditioning step (C 1 . 1 , C 1 . 2 , C 1 . 3 ) comprises a cleaning step, in which a cleaning gas is fed into the process chamber ( 3 ).

Assignees

• Aixtron Se

Inventors

• Tillmanns Pascal
• Schön Oliver
• Schmitt Thomas
• Lauffer Peter Sebald

Classifications

• C23C16/54

  Apparatus specially adapted for continuous coating · CPC title

• C23C16/466

  using thermal contact gas · CPC title

• C23C16/4586

  Elements in the interior of the support, e.g. electrodes, heating or cooling devices · CPC title

• C23C16/0236

  by etching with a reactive gas · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title