Seed layer, a heterostructure comprising the seed layer and a method of forming a layer of material using the seed layer

Patent metadata

Field	Value
Publication number	US-12431350-B2
Application number	US-202117910180-A
Country	US
Kind code	B2
Filing date	Mar 9, 2021
Priority date	Mar 10, 2020
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

A seed layer for inducing nucleation to form a layer of material is described. In an embodiment, the seed layer comprising a layer of two-dimensional monolayer amorphous material having a disordered atomic structure adapted to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals interaction to form the layer of material, wherein each of the electric potential wells has a potential energy larger in magnitude than surrounding thermal energy to capture adatoms on the surface of the seed layer. Embodiments in relation to a method for forming the seed layer, a heterostructure comprising the seed layer, a method for forming the heterostructure comprising the seed layer, a device comprising the heterostructure and a method of enhancing vdW interaction between adatoms and a surface of the seed layer are also described.

First claim

The invention claimed is:

1. A seed layer for inducing nucleation to form a layer of material on a substrate, the seed layer comprising a layer of two-dimensional (2D) monolayer amorphous material having a disordered atomic structure, the disordered atomic structure generating a strained 2D lattice of the layer of 2D monolayer amorphous material and resulting in an atomic rearrangement of the layer of 2D monolayer amorphous material in three-dimensional (3D) space to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals (vdW) interaction, wherein the layer of 2D monolayer amorphous material comprises a homogenous 2D monolayer amorphous carbon, and wherein the seed layer further comprises one or more additional layers of 2D monolayer amorphous carbon deposited directly on the layer of 2D monolayer amorphous material to form a multilayer structure of the seed layer to tune the vdW interaction between the seed layer and the layer of material and to remotely modulate an interaction between the substrate and the adatoms for forming the layer of material during growth.

2. The seed layer of claim 1 , wherein the seed layer has an optical transparency of more than 98% at a light wavelength between 550 nm to 800 nm.

3. The seed layer of claim 1 , wherein the seed layer is thermally stable at a temperature of 700° C.

4. A heterostructure comprising:
a substrate; and
a seed layer formed on the substrate, the seed layer being adapted to induce nucleation to form a layer of material on the substrate and comprises a layer of two-dimensional (2D) monolayer amorphous material having a disordered atomic structure, the disordered atomic structure generating a strained 2D lattice of the layer of 2D monolayer amorphous material and resulting in an atomic rearrangement of the layer of 2D monolayer amorphous material in three-dimensional (3D) space to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals (vdW) interaction, wherein the layer of 2D monolayer amorphous material comprises a homogenous 2D monolayer amorphous carbon, and wherein the seed layer further comprises one or more additional layers of 2D monolayer amorphous carbon deposited directly on the layer of 2D monolayer amorphous material to form a multilayer structure of the seed layer to tune the vdW interaction between the seed layer and the layer of material and to remotely modulate an interaction between the substrate and the adatoms for forming the layer of material during growth.

5. The heterostructure of claim 4 , wherein the substrate comprises one of: a metal, a semiconductor, an insulator, glass, a polymer, silicon, silicon carbide, sapphire, a group III-V substrate, a group II-VI substrate or an oxide.

6. The heterostructure of claim 4 , wherein the substrate is a crystalline substrate, the seed layer is adapted to screen effects provided by a crystallinity of the crystalline substrate.

7. The heterostructure of claim 4 , further comprising the layer of material formed on the seed layer, the layer of material being formed by bonding the adatoms to the surface of the seed layer via the van der Waals (vdW) interaction.

8. The heterostructure of claim 7 , wherein the layer of material comprises one or more layers of a 2D material, the 2D material comprises one of: graphene, borophene, boron nitride, a perovskite, a transition metal dichalcogenide or a black phosphorene.

9. The heterostructure of claim 7 , wherein the layer of material comprises one or more layers of a group III-V semiconducting material, or the layer of material comprises one or more layers of a group II-VI semiconducting material, or the layer of material comprises one or more layers of an oxide.

10. The heterostructure of claim 9 , wherein the group III-V semiconducting material comprises one of: GaAs, GaN, AlN, InP and InN.

11. The heterostructure of claim 9 , wherein the group II-VI semiconducting material comprises one of: CdTe, CdS and ZnS.

12. The heterostructure of claim 9 , wherein the oxide comprises one of: hafnium oxide, aluminium oxide, manganese oxide, perovskite or spinel.

13. A device comprising the heterostructure of claim 4 .

14. A method of forming a layer of material on a substrate, the method comprising:
forming a seed layer on the substrate, the seed layer comprising a layer of two-dimensional (2D) monolayer amorphous material having a disordered atomic structure, the disordered atomic structure generating a strained 2D lattice of the layer of 2D monolayer amorphous material and resulting in an atomic rearrangement of the layer of 2D monolayer amorphous material in three-dimensional (3D) space to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals (vdW) interaction, wherein the layer of 2D monolayer amorphous material comprises a homogenous 2D monolayer amorphous carbon, and wherein the seed layer further comprises one or more additional layers of 2D monolayer amorphous carbon deposited directly on the layer of 2D monolayer amorphous material to form a multilayer structure of the seed layer to tune the vdW interaction between the seed layer and the layer of material and to remotely modulate an interaction between the substrate and the adatoms for forming the layer of material during growth; and
forming the layer of material on the seed layer by bonding the adatoms to the surface of the seed layer via the van der Waals (vdW) interaction.

15. The method of claim 14 , further comprising varying the disordered atomic structure of the layer of 2D monolayer amorphous material to modulate a strength of the vdW interaction between the adatoms and the surface of the seed layer.

16. The method of claim 14 , further comprising:
forming a handling layer on the layer of material; and
detaching the seed layer from the substrate to form a free-standing film comprising the seed layer and the layer of material.

17. The method of claim 14 , wherein forming the seed layer on the substrate comprises growing the seed layer on the substrate using laser-assisted chemical vapour deposition (LCVD).

18. The method of claim 17 , wherein the LCVD is performed at a temperature between 20° C. and 400° C.

19. The seed layer of claim 1 , wherein the disordered atomic structure of the layer of 2D monolayer amorphous material is varied to modulate a strength of the vdW interaction between the adatoms and the surface of the seed layer.

20. The seed layer of claim 1 , wherein a number of layers of 2D monolayer amorphous carbon is controlled to tune the vdW interaction between the seed layer and the layer of material and to remotely modulate an interaction between the substrate and the adatoms for forming the layer of material during growth.

Assignees

• Nat Univ Singapore

Inventors

• Oezyilmaz Barbaros
• Toh Chee Tat
• Abidi Irfan Haider

Classifications

• H10P14/3432

  Tellurides · CPC title

• H10P14/3428

  Sulfides · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3418

  Phosphides · CPC title

• H10P14/3416

  Nitrides · CPC title