Gas injection system and reactor system including same

Patent metadata

Field	Value
Publication number	US-12428726-B2
Application number	US-202017060764-A
Country	US
Kind code	B2
Filing date	Oct 1, 2020
Priority date	Oct 8, 2019
Publication date	Sep 30, 2025
Grant date	Sep 30, 2025

Abstract

A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

First claim

We claim:

1. A gas injection system comprising:
a first gas manifold comprising a first gas inlet and a plurality of first gas outlets;
a second gas manifold comprising a second gas inlet and a plurality of second gas outlets;
a plurality of first gas valves, wherein each of the plurality of first gas outlets is coupled to at least one of the plurality of first gas valves;
a plurality of second gas valves, wherein each of the plurality of second gas outlets is coupled to at least one of the plurality of second gas valves;
at least one first flow controller, wherein each of the at least one first flow controller comprises a mass flow controller;
at least one first upstream gas source, wherein each of the at least one first flow controller is fluidly coupled between the first gas inlet and the at least one first upstream gas source;
at least one second flow controller, wherein each of the at least one second flow controller comprises another mass flow controller;
at least one second upstream gas source, wherein each of the at least one second flow controller is fluidly coupled between the second gas inlet and the at least one second upstream gas source,
wherein the first gas inlet receives a first gas, wherein the first gas comprises at least one first upstream gas from the at least one first upstream gas source, wherein the at least one first upstream gas source comprises a first precursor source and a dopant source, and
wherein the second gas inlet receives a second gas, wherein the second gas comprises at least one second upstream gas from the at least one second upstream gas source, wherein the at least one second upstream gas source comprises the first precursor source or a second precursor source, and an etchant source; and
a controller,
wherein the plurality of first gas outlets comprises:
five sets of first gas outlets,
wherein each set of first gas outlets comprises at least one first gas outlet, wherein the five sets of first gas outlets include a first center set positioned closest to a center of a substrate, two first outermost sets positioned closest to an edge of the substrate, and two first inner sets positioned between the first center set and the two first outermost sets;
wherein the plurality of second gas outlets comprises:
five sets of second gas outlets,
wherein each set of second gas outlets comprises at least one second gas outlet, wherein the five sets of second gas outlets include a second center set positioned closest to the center of the substrate, two second outermost sets positioned closest to the edge of the substrate, and two second inner sets positioned between the second center set and the two second outermost sets.

2. The gas injection system of claim 1 , wherein the at least one second upstream gas source comprises the first precursor source.

3. The gas injection system of claim 2 , wherein a diameter of the first gas manifold is greater than a diameter of the plurality of first gas outlets.

4. The gas injection system of claim 1 , wherein a chemical formula of the first precursor source and a chemical formula of the second precursor source comprise one or more of the same elements.

5. The gas injection system of claim 1 , wherein the first precursor source is a source of a first precursor, wherein the first precursor is selected from the group consisting of trichlorosilane, dichlorosilane, silane, disilane, trisilane, and silicon tetrachloride.

6. The gas injection system of claim 1 , wherein the dopant source is a source of a dopant, wherein the dopant is selected from the group consisting of germane, diborane, phosphine, arsine, and phosphorus trichloride.

7. The gas injection system of claim 1 , wherein the etchant source is a source of an etchant, wherein the etchant comprises hydrogen chloride.

8. A reactor system, comprising:
a gas injection system comprising: of claim 1 ,
a first gas manifold comprising a first gas inlet and a plurality of first gas outlets;
a second gas manifold comprising a second gas inlet and a plurality of second gas outlets;

a plurality of first gas valves, wherein each of the plurality of first gas outlets is coupled to at least one of the plurality of first gas valves;
a plurality of second gas valves, wherein each of the plurality of second gas outlets is coupled to at least one of the plurality of second gas valves;
at least one first flow controller, wherein each of the at least one first flow controller comprises a mass flow controller;
at least one first upstream gas source, wherein each of the at least one first flow controller is fluidly coupled between the first gas inlet and the at least one first upstream gas source;
at least one second flow controller, wherein each of the at least one second flow controller comprises another mass flow controller; and
at least one second upstream gas source, wherein each of the at least one second flow controller is fluidly coupled between the second gas inlet and the at least one second upstream gas source,
wherein the first gas inlet receives a first gas, wherein the first gas comprises at least one first upstream gas from the at least one first upstream gas source, wherein the at least one first upstream gas source comprises a first precursor source and a dopant source, and
wherein the second gas inlet receives a second gas, wherein the second gas comprises at least one second upstream gas from the at least one second upstream gas source, wherein the at least one second upstream gas source comprises the first precursor source or a second precursor source, and an etchant source; and
a susceptor, wherein the susceptor rotates at a rotational speed of about 60 to about 30, about 30 to about 15, or about 15 to about 5 rotations per minute.

9. A method of depositing material on a surface of a substrate within a reaction chamber using the gas injection system of claim 1 .

10. The gas injection system of claim 1 , wherein the controller is configured to flow a different volume of the first gas than a volume of the second gas.

11. The gas injection system of claim 1 , wherein the controller is configured to flow a different volume of the first gas through the first center set than through each of the two first outermost sets.

12. The gas injection system of claim 1 , wherein the controller is configured to flow a different volume of the second gas through the second center set than through each of the two second outermost sets.

Assignees

• Asm Ip Holding Bv

Inventors

• Acosta Tomas Hernandez
• Demos Alexandros
• Westrom Peter
• Miskin Caleb
• Kajbafvala Amir
• Moballegh Ali

Classifications

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• B01J4/008

  Feed or outlet control devices · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title