Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
the imperfections being within the semiconductor body
the imperfections being within the semiconductor body · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D62/53 |
| Official title | the imperfections being within the semiconductor body |
| Display label | the imperfections being within the semiconductor body |
| Total patents | 1,635 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 123 |
| 2016 | 172 |
| 2017 | 182 |
| 2018 | 158 |
| 2019 | 154 |
| 2020 | 153 |
| 2021 | 134 |
| 2022 | 135 |
| 2023 | 113 |
| 2024 | 141 |
| 2025 | 133 |
| 2026 | 37 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device
US-12051591-B2 · Jul 30, 2024 · US
High electron mobility transistors
US-2024088242-A1 · Mar 14, 2024 · US
Semiconductor device and method for manufacturing semiconductor device
US-2024079469-A1 · Mar 7, 2024 · US
Semiconductor device
US-2015364613-A1 · Dec 17, 2015 · US
Semiconductor device and method for manufacturing the same
US-2015364551-A1 · Dec 17, 2015 · US
Stress memorization techniques for transistor devices
US-2015364570-A1 · Dec 17, 2015 · US
Reverse conducting IGBT
US-9214521-B2 · Dec 15, 2015 · US
Method of Manufacturing a Semiconductor Device Comprising Field Stop Zone
US-2015357229-A1 · Dec 10, 2015 · US
Semiconductor heterojunction device
US-2015357456-A1 · Dec 10, 2015 · US
Adjusting the charge carrier lifetime in a bipolar semiconductor device
US-9209027-B1 · Dec 8, 2015 · US
Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same
US-9209020-B2 · Dec 8, 2015 · US
Method of forming epi film in substrate trench
US-9202915-B2 · Dec 1, 2015 · US
Method of growing group III nitride crystals
US-9202872-B2 · Dec 1, 2015 · US
Group iii nitride bulk crystals and their fabrication method
US-2015337453-A1 · Nov 26, 2015 · US
Group iii nitride bulk crystals and their fabrication method
US-2015337457-A1 · Nov 26, 2015 · US
Fabrication of thin-film devices using selective area epitaxy
US-2015340223-A1 · Nov 26, 2015 · US
Method providing an epitaxial growth having a reduction in defects and resulting structure
US-2015325645-A1 · Nov 12, 2015 · US
Semiconductor device, method of manufacturing the same, and power module
US-9184231-B2 · Nov 10, 2015 · US
Silicon carbide substrate, semiconductor device, and methods for manufacturing them
US-9184246-B2 · Nov 10, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D62/53?
- CPC H10D62/53 is the Cooperative Patent Classification code for “the imperfections being within the semiconductor body.”
- How many patents are filed under CPC H10D62/53 (the imperfections being within the semiconductor body)?
- Our database includes 1,635 publications tagged with this CPC code.
- Is patent activity under CPC H10D62/53 growing?
- Publication counts under this code: 141 in 2024 vs 133 in 2025 (latest complete years).