Capacitor connections in dielectric layers

Patent metadata

Field	Value
Publication number	US-12426247-B2
Application number	US-202318381119-A
Country	US
Kind code	B2
Filing date	Oct 17, 2023
Priority date	Jun 28, 2019
Publication date	Sep 23, 2025
Grant date	Sep 23, 2025

Abstract

Embodiments herein describe techniques for a semiconductor device including a substrate. A first capacitor includes a first top plate and a first bottom plate above the substrate. The first top plate is coupled to a first metal electrode within an inter-level dielectric (ILD) layer to access the first capacitor. A second capacitor includes a second top plate and a second bottom plate, where the second top plate is coupled to a second metal electrode within the ILD layer to access the second capacitor. The second metal electrode is disjoint from the first metal electrode. The first capacitor is accessed through the first metal electrode without accessing the second capacitor through the second metal electrode. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate;
a capacitor including a bottom plate above the substrate, and a capacitor dielectric layer above and within the bottom plate, the capacitor dielectric layer having an uppermost surface at a same level as an uppermost surface of the bottom plate in a cross-sectional view, and the capacitor including a conductive via on the uppermost surface of the capacitor dielectric layer, wherein the conductive via has a smaller lateral dimension than the capacitor dielectric layer and the bottom plate in the cross-sectional view at a location directly above the uppermost surface of the capacitor dielectric layer; and
a metal electrode coupled to the conductive via.

2. The semiconductor device of claim 1 , wherein the metal electrode is substantially coplanar with respect to a surface of the substrate.

3. The semiconductor device of claim 1 , further comprising an interlayer dielectric (ILD) layer above the bottom plate and the capacitor dielectric layer, wherein the conductive via and the metal electrode are in the ILD layer.

4. The semiconductor device of claim 1 , further comprising an interlayer dielectric (ILD) layer below the bottom plate and the capacitor dielectric layer.

5. The semiconductor device of claim 4 , further comprising a second conductive via in the ILD layer.

6. The semiconductor device of claim 1 , further comprising a first interlayer dielectric (ILD) layer above the bottom plate and the capacitor dielectric layer, wherein the conductive via and the metal electrode are in the first ILD layer; and
a second ILD layer below the bottom plate and the capacitor dielectric layer.

7. The semiconductor device of claim 6 , further comprising a second conductive via in the second ILD layer.

8. The semiconductor device of claim 1 , wherein the capacitor is included in a bit cell of a memory array, and the metal electrode is coupled to a bit line of the memory array.

9. The semiconductor device of claim 1 , wherein the bottom plate includes a U-shaped portion.

10. The semiconductor device of claim 1 , wherein the bottom plate includes a material selected from the group consisting of titanium (Ti), molybdenum (Mo), gold (Au), platinum (Pt), aluminum (Al), nickel (Ni), copper (Cu), chromium (Cr), hafnium (Hf), indium (In), and an alloy of Ti, Mo, Au, Pt, Al, Ni, Cu, Cr, TiAIN, HfAIN, or InAIO.

11. A computing device, comprising:
a circuit board; and
a memory device coupled to the circuit board and including a memory array, wherein the memory array includes a plurality of memory cells, a memory cell of the plurality of memory cells includes a transistor coupled to a capacitor;
wherein the capacitor includes a bottom plate above a substrate, and a capacitor dielectric layer above and within the bottom plate, the capacitor dielectric layer having an uppermost surface at a same level as an uppermost surface of the bottom plate in a cross-sectional view, and the capacitor including a conductive via on the uppermost surface of the capacitor dielectric layer, wherein the conductive via has a smaller lateral dimension than the capacitor dielectric layer and the bottom plate in the cross-sectional view at a location directly above the uppermost surface of the capacitor dielectric layer.

12. The computing device of claim 11 , further comprising a metal electrode coupled to the conductive via of the capacitor.

13. The computing device of claim 12 , further comprising an interlayer dielectric (ILD) layer above the bottom plate and the capacitor dielectric layer, wherein the conductive via and the metal electrode are in the ILD layer.

14. The computing device of claim 11 , further comprising an interlayer dielectric (ILD) layer below the bottom plate and the capacitor dielectric layer.

15. The computing device of claim 14 , further comprising a second conductive via in the ILD layer.

16. The computing device of claim 11 , further comprising a battery coupled to the circuit board.

17. The computing device of claim 11 , further comprising a display coupled to the circuit board.

18. The computing device of claim 11 , further comprising a camera coupled to the circuit board.

19. The computing device of claim 11 , further comprising a GPS coupled to the circuit board.

20. The computing device of claim 11 , further comprising a sensor coupled to the circuit board.

Assignees

• Intel Corp

Inventors

• Lajoie Travis W
• Sharma Abhishek A
• Le Van H
• Ku Chieh-Jen
• Wang Pei-Hua
• Kavalieros Jack T
• Sell Bernhard
• Ghani Tahir
• George Gregory
• Garg Akash
• Gardiner Allen B
• Ogadhoh Shem
• Alzate Vinasco Juan G
• Arslan Umut
• Hamzaoglu Fatih
• Mehta Nikhil
• Stoeger Jared
• Huang Yu-Wen
• Zhou Shu

Classifications

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/421

  having a particular composition, shape or crystalline structure of the active layer · CPC title