Electrostatic chuck
US-2019013231-A1 · Jan 10, 2019 · US
US12424452B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12424452-B2 |
| Application number | US-202217683479-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 1, 2022 |
| Priority date | Oct 18, 2019 |
| Publication date | Sep 23, 2025 |
| Grant date | Sep 23, 2025 |
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A deflectable platen including a first layer formed of a material having a first coefficient of thermal expansion (CTE), and a second layer bonded to the first layer and having a second CTE, the second layer including a plurality of electrodes embedded therein for facilitating electrostatic clamping of wafers to the second layer, wherein the second CTE is different than the first CTE.
Opening claim text (preview).
The invention claimed is: 1. A method of deflecting a platen comprising: providing a first layer formed of a material having a first coefficient of thermal expansion (CTE); providing a second layer formed of a material having a second CTE bonded to, and in directed contact with, the first layer, the second layer including a plurality of electrodes embedded therein for facilitating electrostatic clamping of wafers to the second layer, wherein the second CTE is different than the first CTE; and activating a heat trace disposed between the first layer and the second layer to heat the first layer and the second layer to a temperature in a range of 200 degrees Celsius to 600 degrees Celsius, wherein the heat trace is disposed entirely between, and is in direct contact with, the first layer and the second layer. 2. The method of claim 1 , wherein the second CTE is greater than the first CTE. 3. The method of claim 2 , wherein the first CTE is between 2.0×10 −7 /° C. and 4.0×10 −7 /° C., and the second CTE is between 6.0×10 −7 /° C. and 8.0×10 −7 /° C. 4. The method of claim 2 , wherein the first layer is formed of at least one of quartz, carbon, silicon, silicon nitride, silicon carbide, aluminum nitride, INVAR, KOVAR, molybdenum, tungsten, tantalum, and titanium. 5. The method of claim 2 , wherein the second layer is formed of at least one of ceramic, aluminum, silver, and copper. 6. The method of claim 1 , wherein the heat trace comprises at least one of a wire, a cable, a plate, and a tape connected to a source of electrical power. 7. The method of claim 1 , wherein the first CTE is greater than the second CTE. 8. The method of claim 7 , wherein the second CTE is between 2.0×10 −7 /° C. and 4.0×10 −7 /° C., and the first CTE is between 6.0×10 −7 /° C. and 8.0×10 −7 /° C.
using temporarily an auxiliary support · CPC title
using bonding · CPC title
Thermal treatments, e.g. annealing or sintering · CPC title
characterised by a coating, a hardness or a material · CPC title
characterised by edge profile or support profile · CPC title
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