Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device
US-2018012758-A1 · Jan 11, 2018 · US
Silicon carbide single crystal
US2021102311A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021102311-A1 |
| Application number | US-202017123338-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 16, 2020 |
| Priority date | Jun 19, 2018 |
| Publication date | Apr 8, 2021 |
| Grant date | — |
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- Title
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Abstract
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A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×10 15 cm −3 or more.
First claim
Opening claim text (preview).
What is claimed is: 1 . A silicon carbide single crystal comprising: a heavy metal element having a specific gravity higher than a specific gravity of iron; and a light metal element including boron, wherein an addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is 1×10 15 cm −3 or more, and an addition density of the boron is 5.0×10 15 cm −3 or less. 2 . The silicon carbide single crystal according to claim 1 , wherein the addition density of the heavy metal element is 1×10 16 cm −3 or more. 3 . The silicon carbide single crystal according to claim 1 , wherein the addition density of the heavy metal element is 5.0×10 18 cm −3 or less. 4 . The silicon carbide single crystal according to claim 1 , wherein the heavy metal element is tantalum or niobium. 5 . The silicon carbide single crystal according to claim 1 , further comprising nitrogen, wherein an addition density of the nitrogen is 1×10 18 cm −3 or more. 6 . The silicon carbide single crystal according to claim 5 , wherein at a position where the addition density of the heavy metal element is highest, a ratio of the addition density of nitrogen to the addition density of the heavy metal element is 2.0 or more. 7 . A silicon carbide single crystal comprising: a heavy metal element having a specific gravity higher than a specific gravity of iron; and a light metal element including aluminum, wherein an addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is 1×10 15 cm −3 or more, and an addition density of the aluminum is 5.0×10 17 cm −3 or less. 8 . The silicon carbide single crystal according to claim 7 , wherein the addition density of the heavy metal element is 1×10 16 cm −3 or more. 9 . The silicon carbide single crystal according to claim 7 , wherein the addition density of the heavy metal element is 5.0×10 18 cm −3 or less. 10 . The silicon carbide single crystal according to claim 7 , wherein the heavy metal element is tantalum or niobium. 11 . The silicon carbide single crystal according to claim 7 , further comprising nitrogen, wherein an addition density of the nitrogen is 1×10 18 cm −3 or more. 12 . The silicon carbide single crystal according to claim 11 , wherein at a position where the addition density of the heavy metal element is highest, a ratio of the addition density of nitrogen to the addition density of the heavy metal element is 2.0 , or more.
Assignees
Inventors
Classifications
- C30B29/36Primary
Carbides · CPC title
Silicon carbide · CPC title
Epitaxial-layer growth · CPC title
the substrate being of the same materials as the epitaxial layer · CPC title
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Frequently asked questions
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- What does patent US2021102311A1 cover?
- A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×10 15 cm −3 or more.
- Who is the assignee on this patent?
- Denso Corp, Central Res Inst Electric Power Ind
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Apr 08 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).