Tin oxide films in semiconductor device manufacturing

Patent metadata

Field	Value
Publication number	US-12417916-B2
Application number	US-202117302850-A
Country	US
Kind code	B2
Filing date	May 13, 2021
Priority date	Feb 17, 2017
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.

First claim

What is claimed is:

1. A method of processing a semiconductor substrate, the method comprising:
(a) providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer;
(b) etching a plurality of openings in the tin oxide layer using the patterned photoresist layer as a mask, wherein etching the plurality of openings comprises etching the tin oxide layer using a hydrogen-based etch chemistry to form a tin hydride,
wherein (b) comprises etching the tin oxide layer using the hydrogen-based etch chemistry, wherein the etching comprises contacting the semiconductor substrate with a plasma formed in a process gas comprising H 2 and Cl 2 , wherein H 2 concentration in the process gas is at least 50%; and
(c) removing the photoresist layer using an oxygen-based etch chemistry.

2. The method of claim 1 , wherein H 2 concentration in the process gas is at least 80%.

3. The method of claim 1 , wherein the semiconductor substrate provided in (a) comprises one or more intermediate layers between the tin oxide layer and the patterned photoresist layer, and wherein etching a plurality of openings in the tin oxide layer using the patterned photoresist layer as a mask comprises transferring a pattern of the patterned photoresist layer to the one or more intermediate layers.

4. The method of claim 1 , wherein (b) comprises etching the tin oxide layer selectively in a presence of exposed photoresist.

5. The method of claim 1 , wherein the semiconductor substrate provided in (a) comprises a silicon-containing intermediate layer between the tin oxide layer and the patterned photoresist layer, wherein etching the plurality of openings in the tin oxide layer using the patterned photoresist layer as a mask comprises transferring a pattern of the patterned photoresist layer to the silicon-containing intermediate layer prior to contacting the semiconductor substrate with the tin oxide etching chemistry.

6. The method of claim 5 , wherein the intermediate layer is a spin on glass layer.

7. The method of claim 1 , wherein the semiconductor substrate provided in (a) further comprises a carbon intermediate layer between the tin oxide layer and the patterned photoresist layer, wherein etching the plurality of openings in the tin oxide layer using the patterned photoresist layer as a mask comprises transferring a pattern of the patterned photoresist layer to the intermediate carbon layer prior to contacting the semiconductor substrate with the tin oxide etching chemistry.

8. The method of claim 7 , wherein the semiconductor substrate provided in (a) further comprises a target layer underlying the tin oxide layer, and wherein the method further comprises after (b) etching the carbon layer exposed at bottom portions of the openings in the tin oxide layer to thereby transfer the pattern of the patterned photoresist layer to the target layer.

9. The method of claim 8 , wherein the target layer is a carbon layer.

10. The method of claim 8 , wherein the carbon layer is etched selectively in a presence of tin oxide using an oxygen-based etch chemistry.

11. The method of claim 1 , the method comprising:
wherein a tin oxide in the tin oxide layer is distinct from an indium tin oxide, and wherein oxygen to tin atomic ratio in the tin oxide is between 1.5 and 2.5.

12. A method of processing a semiconductor substrate, the method comprising:
(a) providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer,

wherein the semiconductor substrate further comprises an intermediate layer between the tin oxide layer and the patterned photoresist layer, wherein etching the plurality of openings in the tin oxide layer using the patterned photoresist layer as a mask comprises transferring a pattern of the patterned photoresist layer to the intermediate layer prior to contacting the semiconductor substrate with the tin oxide etching chemistry, wherein the intermediate layer is one of a carbon-containing intermediate layer and a silicon-containing intermediate layer;
(b) etching a plurality of openings in the tin oxide layer using the patterned photoresist layer as a mask, wherein etching the plurality of openings comprises etching the tin oxide layer using a hydrogen-based etch chemistry; and
(c) removing the photoresist layer using an oxygen-based etch chemistry.

13. The method of claim 12 , wherein (b) comprises etching the tin oxide layer using the hydrogen-based etch chemistry, wherein the etching comprises contacting the semiconductor substrate with H 2 activated in a plasma and Cl 2 activated in a plasma.

14. The method of claim 12 , wherein (b) comprises etching the tin oxide layer using the hydrogen-based etch chemistry, wherein the etching comprises contacting the semiconductor substrate with a plasma formed in a process gas comprising H 2 and Cl 2 , wherein H 2 concentration in the process gas is at least 50%.

15. The method of claim 12 , wherein (b) comprises etching the tin oxide layer using the hydrogen-based etch chemistry, wherein the etching comprises contacting the semiconductor substrate with a plasma formed in a process gas comprising H 2 and Cl 2 , wherein H 2 concentration in the process gas is at least 80%.

16. The method of claim 12 , wherein (b) comprises etching the tin oxide layer using the hydrogen-based etch chemistry, wherein the etching comprises forming a plasma in a process gas comprising a hydrogen-containing gas selected from the group consisting of H 2 , HBr, NH 3 , H 2 O, a hydrocarbon, and combinations thereof.

Assignees

• Lam Res Corp

Inventors

• Yu Jengyi
• Tan Samantha S H
• Jiang Yu
• Wu Hui-Jung
• Wise Richard
• Pan Yang
• Shamma Nader
• Volosskiy Boris

Classifications

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/50

  for positioning, orientation or alignment · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title