Plasma processing with magnetic ring X point

Patent metadata

Field	Value
Publication number	US-12412748-B2
Application number	US-202217815768-A
Country	US
Kind code	B2
Filing date	Jul 28, 2022
Priority date	Jul 28, 2022
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

A plasma etching system that includes a plasma processing chamber, a substrate holder disposed in the plasma processing chamber, a RF power source configured to generate a plasma in the plasma processing chamber, a first magnet disposed above the substrate holder, the first magnet configured to apply, in the plasma processing chamber, an azimuthally symmetric magnetic field that is independent from a magnetic field generated by the RF power source, and a second magnet disposed below the substrate holder and configured to modify the azimuthally symmetric magnetic field and create a ring X point between the first magnet and the second magnet, where positions of the first magnet and the second magnet are arranged such that the ring X point is located nearer to an edge of the substrate holder than a center of the substrate holder.

First claim

What is claimed is:

1. A method of processing a substrate, the method comprising:
loading the substrate in a plasma processing chamber, the substrate comprising a patterned hard mask layer and an underlying layer, the plasma processing chamber comprising a RF power source and a set of electromagnets;
flowing a process gas into the plasma processing chamber;
providing power to the set of electromagnets to generate an azimuthally symmetric magnetic field in the plasma processing chamber, the azimuthally symmetric magnetic field comprising a ring X point where the azimuthally symmetric magnetic field is locally neutralized, the ring X point being located concentrically with the substrate;
generating a plasma from the process gas in the plasma processing chamber by powering the RF power source;
while providing the power to the set of electromagnets, exposing the substrate to the plasma and etching the underlying layer selectively to the patterned hard mask layer; and
while exposing the substrate to the plasma, changing the power to the set of electromagnets to change the azimuthally symmetric magnetic field.

2. The method of claim 1 , wherein the set of electromagnets comprising:
a first electromagnet positioned above a substrate holder supporting the substrate; and
a second electromagnet positioned below the substrate holder.

3. The method of claim 1 , wherein changing the power to the set of electromagnets moves a position of the ring X point.

4. The method of claim 1 , wherein changing the power to the set of electromagnets comprises amplitude modulation with time.

5. The method of claim 1 , further comprising providing an additional RF field to the plasma.

6. The method of claim 1 , wherein providing the power to the set of electromagnets locally increases a plasma density of the plasma near the ring X point.

7. A method of processing a substrate, the method comprising:
loading the substrate in a plasma processing chamber, the substrate comprising a patterned hard mask layer and an underlying layer, the plasma processing chamber comprising a RF power source and a set of electromagnets;
flowing a process gas into the plasma processing chamber;
positioning a first electromagnet above a substrate holder supporting the substrate and powering the first electromagnet to apply an azimuthally symmetric magnetic field in the plasma processing chamber, the azimuthally symmetric magnetic field being independent from a magnetic field generated by the RF power source;
positioning a second electromagnet below the substrate holder and powering the second electromagnet to modify the azimuthally symmetric magnetic field and create a ring X point where the azimuthally symmetric magnetic field is locally neutralized, the ring X point being between the first electromagnet and the second electromagnet, wherein positions of the first electromagnet and the second electromagnet are arranged such that the ring X point is located nearer to an edge of the substrate holder than a center of the substrate holder;
generating a plasma from the process gas in the plasma processing chamber by powering the RF power source; and
while providing the power to the first and the second electromagnets, exposing the substrate to the plasma and etching the underlying layer selectively to the patterned hard mask layer.

8. The method of claim 7 , wherein the first electromagnet is positioned outside the plasma processing chamber over an upper wall of the plasma processing chamber, and wherein the second electromagnet is positioned inside the plasma processing chamber.

9. The method of claim 7 , wherein the ring X point is located above the substrate holder.

10. The method of claim 7 , wherein the ring X point is located at a position between the substrate holder and an upper wall of the plasma processing chamber, the position being closer to the substrate holder than the upper wall.

11. The method of claim 7 , wherein the ring X point is located within ±10% of a diameter of the substrate holder.

12. A method of processing a substrate, the method comprising:
loading the substrate over a substrate holder in a plasma processing chamber, the substrate comprising a patterned hard mask layer and an underlying layer, the plasma processing chamber comprising a RF power source and a set of magnets, the substrate holder being surrounded by a concentric focus ring;
flowing a process gas into the plasma processing chamber;
positioning the set of magnets to generate an azimuthally symmetric magnetic field in the plasma processing chamber, the azimuthally symmetric magnetic field comprising a ring X point where the azimuthally symmetric magnetic field is locally neutralized, the ring X point being located concentrically with the substrate and surrounding the substrate laterally to be proximate to a major plane of the substrate;
generating a plasma from the process gas in the plasma processing chamber by powering the RF power source; and
while generating the azimuthally symmetric magnetic field, exposing the substrate to the plasma and etching the underlying layer selectively to the patterned hard mask layer.

13. The method of claim 12 , wherein positioning the set of magnets comprises positioning a first magnet above the substrate holder and a second magnet below the substrate holder.

14. The method of claim 13 , wherein positioning the set of magnets further comprises positioning a third magnet above the substrate holder.

15. The method of claim 12 , wherein a diameter of the ring X point is between 100% and 105% of an outer diameter of the focus ring.

16. The method of claim 12 , further comprising while exposing the substrate to the plasma, changing the power to the set of electromagnets to change the azimuthally symmetric magnetic field.

17. The method of claim 16 , wherein changing the power to the set of electromagnets moves a position of the ring X point or amplitude modulation with time.

18. The method of claim 12 , further comprising providing an additional RF field to the plasma.

19. The method of claim 12 , wherein providing the power to the set of electromagnets comprises locally increasing a plasma density of the plasma near the ring X point.

20. The method of claim 13 , wherein positions of the first magnet and the second magnet are arranged such that the ring X point is located nearer to an edge of the substrate holder than a center of the substrate holder.

Assignees

• Tokyo Electron Ltd

Inventors

• Lane Barton
• Ventzek Peter Lowell George

Classifications

• H10P50/242 Primary

  of Group IV materials · CPC title

• H01J37/32642

  Focus rings · CPC title

• H01J37/32669 Primary

  Particular magnets or magnet arrangements for controlling the discharge · CPC title

• H01J37/3266

  Magnetic control means · CPC title

• H01L21/3065 Primary

  Electricity · mapped topic