Parallel atomic layer deposition of target element interiors

Patent metadata

Field	Value
Publication number	US-12404584-B2
Application number	US-202318223199-A
Country	US
Kind code	B2
Filing date	Jul 18, 2023
Priority date	Jul 18, 2023
Publication date	Sep 2, 2025
Grant date	Sep 2, 2025

Abstract

A method includes performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

First claim

What is claimed is:

1. A method comprising:
performing an atomic layer deposition (ALD) process with respect to a plurality of components, each component comprising a target element, to coat interiors of the target elements of the plurality of components with a protective coating, wherein performing the ALD process comprises:
alternating delivery of a first precursor inside each of the target elements for a first duration to form an adsorption layer on the interiors of the target elements;
alternating purging of the first precursor from the target elements for a second duration, wherein the purging is performed for a first interior of a first target element while delivery of the first precursor is performed for a second interior of a second target element; and
alternating delivery of a second precursor inside each of the target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the target elements, wherein the delivery of the second precursor is performed for the first interior of the first target element while purging is performed for the second interior of the second target element or a third interior of a third target element.

2. The method of claim 1 , wherein alternating delivery of the first precursor comprises:
pulsing the first precursor inside the first interior of the first target element at a first time; and
pulsing the first precursor inside the second interior of the second target element at a later second time, wherein a first difference between the first time and the second time comprises an offset delay.

3. The method of claim 2 , wherein alternating delivery of the second precursor comprises:
pulsing the second precursor inside the first interior of the first target element at a later third time; and
pulsing the second precursor inside the second interior of the second target element at a later fourth time, wherein a second difference between the third time and the fourth time comprises the offset delay.

4. The method of claim 3 , wherein alternating purging of the first precursor comprises:
flowing a purge gas inside the first interior of the first target element subsequent to the first time until the third time; and
flowing the purge gas inside the second interior of the second target element subsequent to the second time until the fourth time.

5. The method of claim 2 , wherein the offset delay comprises a time delay between 100 milliseconds and 500 milliseconds.

6. The method of claim 1 , wherein one or more of the first duration or the third duration comprises a length of time between 10 milliseconds and 50 milliseconds.

7. The method of claim 1 , wherein the second duration comprises a length of time between 3 seconds and 9 seconds.

8. The method of claim 1 , wherein:
alternating delivery of the first precursor comprises opening one or more first valves for the first duration to cause the first precursor to flow to each of the target elements;
alternating delivery of the second precursor comprises opening one or more second valves for the third duration to cause the second precursor to flow to each of the target elements; and
alternating purging of the first precursor comprises opening one or more third valves for the second duration to cause purge gas to flow to each of the target elements.

9. The method of claim 1 , wherein the interiors of the target elements are fluidly coupled in parallel with one another to receive the first precursor, a purge gas, and the second precursor from a common distribution system.

10. The method of claim 1 , wherein the protective coating comprises an aluminum oxide coating on one or more interior surfaces of the target elements.

11. The method of claim 1 , wherein the first precursor comprises one of trimethyl aluminum (TMA) or aluminum chloride, wherein the second precursor comprises one of water (H 2 O) or ozone (O 3 ).

12. The method of claim 1 , wherein alternating purging of the first precursor comprises flowing a purge gas comprising nitrogen.

13. The method of claim 1 , wherein a target element comprises a gas delivery tube configured to deliver a process gas to a process chamber.

14. The method of claim 1 , wherein alternating delivery of the first precursor inside each of the interiors of the target elements comprises a first rastering of pulsing of the first precursor, and wherein alternating delivery of the second precursor comprises a second rastering of pulsing of the second precursor.

Assignees

• Applied Materials Inc

Inventors

• Tomar Yogesh
• Patil Nikshep
• Naina Kirubanandan Shanmugam
• Panavalappil Kumarankutty Hanish Kumar
• Natu Gayatri
• Arcot Mahesh Chelvaraj
• Nattamai Subramanian Senthil Kumar
• Rajendran Hari Venkatesh
• Rice Michael
• Beaudry Christopher Laurent

Classifications

• C23C16/4408

  by purging residual gases from the reaction chamber or gas lines · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/45529 Primary

  specially adapted for making a layer stack of alternating different compositions or gradient compositions · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title