Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube

US12398483B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12398483-B2
Application numberUS-202418735755-A
CountryUS
Kind codeB2
Filing dateJun 6, 2024
Priority dateJan 6, 2022
Publication dateAug 26, 2025
Grant dateAug 26, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.

First claim

Opening claim text (preview).

What is claimed is: 1. An ingot puller apparatus for manufacturing a single crystal silicon ingot, the ingot puller apparatus comprising: a crucible assembly for holding a silicon melt; a crystal puller housing that defines a growth chamber for pulling a silicon ingot from the melt, the crucible assembly being disposed within the growth chamber; a silicon feed tube for adding solid silicon to the crucible assembly, the silicon feed tube extending into the growth chamber; a funnel that at least partially extends into the silicon feed tube, the funnel and silicon feed tube being separated by a gap; and a flange that extends from the silicon feed tube, the flange extending fully across the gap to reduce backflow of gases from the silicon feed tube into the growth chamber, the flange being disposed above the silicon feed tube and contacting an upper end of the silicon feed tube, the funnel extending through the flange. 2. The ingot puller apparatus as set forth in claim 1 wherein the flange is a quartz ring. 3. The ingot puller apparatus as set forth in claim 1 wherein the silicon feed tube comprises a receiving portion and a main portion having a diameter less than the receiving portion, the funnel being at least partially disposed within the receiving portion. 4. The ingot puller apparatus as set forth in claim 1 wherein the flange and crystal puller housing are separated by a gap. 5. An ingot puller apparatus for manufacturing a single crystal silicon ingot, the ingot puller apparatus comprising: a crucible assembly for holding a silicon melt; a crystal puller housing that defines a growth chamber for pulling a silicon ingot from the melt, the crucible assembly being disposed within the growth chamber; a silicon feed tube for adding solid silicon to the crucible assembly, the silicon feed tube extending into the growth chamber; a funnel that at least partially extends into the silicon feed tube, the funnel and silicon feed tube being separated by a gap; and a flange that extends from the silicon feed tube, the flange extending fully across the gap to reduce backflow of gases from the silicon feed tube into the growth chamber, the flange being disposed within the silicon feed tube, the flange having an opening through which solid silicon passes. 6. The ingot puller apparatus as set forth in claim 5 wherein the flange is made of quartz.

Assignees

Inventors

Classifications

  • Crucibles or containers · CPC title

  • Controlling or regulating (controlling or regulating in general G05) · CPC title

  • Continuous growth · CPC title

  • Double crucible methods · CPC title

  • adding crystallising materials or reactants forming it in situ to the melt · CPC title

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Frequently asked questions

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What does patent US12398483B2 cover?
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.
Who is the assignee on this patent?
Globalwafers Co Ltd
What technology area does this patent fall under?
Primary CPC classification C30B15/10. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 26 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).