Titanium nitride film forming method and titanium nitride film forming apparatus

Patent metadata

Field	Value
Publication number	US-12392029-B2
Application number	US-202217661577-A
Country	US
Kind code	B2
Filing date	May 2, 2022
Priority date	May 10, 2021
Publication date	Aug 19, 2025
Grant date	Aug 19, 2025

Abstract

A method of forming a titanium nitride film includes: forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reacts with the titanium compound to form titanium nitride, to the substrate, wherein the forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7 kPa to 12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 micro-ohm-cm or less.

First claim

What is claimed is:

1. A method of forming a titanium nitride film, comprising:
adjusting an open degree of an APC (auto pressure controller) valve; and
forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reacts with the titanium compound to form titanium nitride, to the substrate,
wherein the forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7 kPa to 12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 micro-ohm-cm or less, and
wherein the pressure in the processing container during the forming the titanium nitride film is about twice a pressure in the processing container during the adjusting the open degree of the APC valve.

2. The method of claim 1 , wherein the titanium compound is titanium tetrachloride.

3. The method of claim 2 , wherein the nitrogen compound is ammonia.

4. The method of claim 3 , wherein the forming the titanium nitride film further includes supplying an additive gas, which contains a silicon compound that reacts with chlorine contained in the titanium compound, during a period of supplying the raw material gas to the substrate.

5. The method of claim 4 , wherein a start timing of the supply of the additive gas is after the supply of the raw material gas is started.

6. The method of claim 5 , wherein the silicon compound is silane.

7. The method of claim 4 , wherein the silicon compound is silane.

8. The method of claim 1 , wherein the nitrogen compound is ammonia.

9. The method of claim 1 , wherein the forming the titanium nitride film further includes supplying an additive gas, which contains a silicon compound that reacts with chlorine contained in the titanium compound, during a period of supplying the raw material gas to the substrate.

10. The method of claim 1 , wherein the forming the titanium nitride film is executed under a condition that the substrate is heated to a temperature within a range of 400 degrees C. to 750 degrees C.

11. The method of claim 1 , wherein the forming the titanium nitride film is executed while supplying an inert gas into the processing container.

12. The method of claim 11 , wherein hydrogen gas is supplied together with the inert gas at a timing when the supply of the raw material gas and the supply of the reaction gas are switched.

Assignees

• Tokyo Electron Ltd

Inventors

• Takahashi Tsuyoshi
• Hong Seokhyoung
• Higuchi Kensuke

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/4446

  Refractory-metal alloys · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title