Method and apparatus for sputter deposition of target material to a substrate

Patent metadata

Field	Value
Publication number	US-12385141-B2
Application number	US-202017776588-A
Country	US
Kind code	B2
Filing date	Nov 10, 2020
Priority date	Nov 15, 2019
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

An apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate portion in which a substrate is provided and a target portion in which target material is provided, in use. The target portion and the substrate portion define between them a deposition zone. The apparatus includes an antenna arrangement for generating plasma, in use, and a confining arrangement. The confining arrangement includes a first element between the antenna arrangement and the deposition zone and a second element. The antenna arrangement is between the second element and the deposition zone. The first element confines the plasma towards the deposition zone to provide for sputter deposition of target material to the substrate, in use. The second element confines the plasma away from the second element, towards the antenna arrangement and, via the first element, towards the deposition zone, in use.

First claim

The invention claimed is:

1. An apparatus for sputter deposition of target material to a substrate, the apparatus comprising:
a substrate portion configured to provide a substrate;
a target portion spaced from the substrate portion and configured to provide a target material, the target portion and the substrate portion defining between them a deposition zone;
an antenna arrangement comprising at least one antenna configured to generate plasma when an alternating current is driven through the antenna;
a confining arrangement comprising:
at least two first elements configured to confine the plasma from the antenna arrangement towards and through the deposition zone, thereby to provide for sputter deposition of target material to the substrate, wherein the at least two first elements are a first magnetic element which is a first solenoid and a second magnetic element which is a second solenoid, wherein each of the first and second solenoids have an opening configured to confine the plasma through the opening, wherein the first solenoid is disposed between the antenna arrangement and the deposition zone and between the substrate portion and the target portion, and the second solenoid is disposed on an opposite side of the deposition zone from the first solenoid and between the substrate portion and the target portion; and
at least one second element disposed such that the antenna arrangement is between the at least one second element and the deposition zone, and configured to confine the plasma away from the second element, towards the antenna arrangement and thereby, via the first solenoid, towards the deposition zone.

2. The apparatus according to claim 1 , wherein the apparatus comprises a controller arranged to control the first confining magnetic field provided by the first solenoid.

3. The apparatus according to claim 1 , wherein the at least one antenna is elongate, and the opening of the first solenoid is elongate in a direction substantially parallel to a direction in which the at least one antenna is elongate.

4. The apparatus according to claim 1 , wherein the antenna arrangement comprises two antennas, and wherein the first solenoid is configured such that the opening of the first solenoid opens into an area defined between the two antennas.

5. The apparatus according to claim 1 , wherein the at least one second element is a second magnetic element configured to provide a second confining magnetic field to, at least in a volume intermediate of the first element and the second element, oppose the first confining magnetic field thereby to confine the plasma away from the second magnetic element, towards the antenna arrangement and thereby, via the first solenoid, towards the deposition zone.

6. The apparatus according to claim 5 , wherein the second confining magnetic field is configured to, in a volume intermediate of the first solenoid and the second element, reduce a magnetic flux of the first confining magnetic field along a direction between the first solenoid and the second element.

7. The apparatus according to claim 5 , wherein the second magnetic element is an electromagnet controllable to provide the second confining magnetic field.

8. The apparatus according to claim 7 , wherein the apparatus comprises a controller configured to control the second confining magnetic field provided by the second magnetic element.

9. The apparatus according to claim 1 , wherein the at least one second element is an electrostatic element controllable to provide an electric field to, at least in a volume intermediate of the first solenoid and the electrostatic element, repel at least a portion of the plasma from the electrostatic element, towards the antenna arrangement and thereby, via the first solenoid, towards the deposition zone.

10. The apparatus according to claim 9 , wherein the electrostatic element is configured to be positively charged thereby to repel positively charged ions of the plasma.

11. The apparatus according to claim 9 , wherein the apparatus comprises a controller configured to control the electric field provided by the electrostatic element.

12. The apparatus according to claim 1 , wherein the confining arrangement comprises a third element disposed such that the deposition zone is between the second element and the third element, the third element being configured to confine the plasma away from the third element and towards the deposition zone.

13. The apparatus according to claim 12 , wherein the third element is disposed such that the first solenoid and the second solenoid and the deposition zone are between the third element and the second element, such that the third element confines the plasma away from the third element and, via the second solenoid, towards the deposition zone.

14. The apparatus according to claim 1 , wherein the target portion is controllable to provide the target material with a negative electric charge, thereby to attract positively charged ions of the plasma.

15. The apparatus according to claim 1 , wherein the apparatus comprises a web feed assembly configured to provide a web of substrate in the substrate portion.

16. A method of sputter deposition of target material to a substrate using the apparatus according to claim 1 , wherein the deposition zone is defined between the substrate and the target material, the method comprising:
generating plasma using the antenna arrangement comprising the at least one antenna;
confining, using the at least two first elements disposed between the antenna arrangement and the deposition zone, the plasma from the antenna arrangement towards the deposition zone thereby to cause sputter deposition of the target material to the substrate; and
confining, using the at least one second element disposed such that the antenna arrangement is between the at least one second element and the deposition zone, the plasma away from the second element, towards the antenna arrangement and thereby, via the first solenoid, towards the deposition zone.

Assignees

• Dyson Technology Ltd

Inventors

• Rendall Michael Edward
• Gruar Robert Ian Joseph

Classifications

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• C23C14/562

  for coating elongated substrates · CPC title

• C23C14/54

  Controlling or regulating the coating process · CPC title

• C23C14/351 Primary

  using a magnetic field in close vicinity to the substrate · CPC title

• H01J37/34

  operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) · CPC title