Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-12377519-B2
Application number	US-201917415756-A
Country	US
Kind code	B2
Filing date	Dec 6, 2019
Priority date	Dec 19, 2018
Publication date	Aug 5, 2025
Grant date	Aug 5, 2025

Abstract

A substrate processing apparatus includes a rotary table configured to move each of multiple substrate chucks to, in sequence, a carry-in position where a carry-in of a substrate is performed, a processing position where thinning of the substrate is performed, and a carry-out position where a carry-out of the substrate is performed; a tilt angle adjusting device configured to adjust a tilt angle of the substrate chuck with respect to the rotary table at the processing position; and a tilt angle controller configured to control the tilt angle adjusting device based on a measurement result of a plate thickness measuring device. The plate thickness measuring device measures a plate thickness of the substrate at the carry-out position.

First claim

We claim:

1. A substrate processing apparatus, comprising:
a rotary table configured to move each of multiple substrate chucks to, in sequence, a carry-in position where a carry-in of a substrate is performed, a processing position where thinning of the substrate is performed, and a carry-out position where a carry-out of the substrate is performed;
two connectors, connecting the substrate chuck and the rotary table, configured to linearly move to adjust a tilt angle of the substrate chuck with respect to the rotary table at the processing position;
a spindle shaft including a flange at an end thereof, wherein a whetstone is attached to the flange in a replaceable manner, and the whetstone is configured to thin the substrate at the processing position;
a laser displacement sensor provided at the carry-out position and configured to measure, at multiple points of the substrate in a diametrical direction thereof, a plate thickness of the substrate thinned by the whetstone; and
a controller and a storage including a program, wherein the storage and the program are configured, with the controller, to control the substrate processing apparatus,
wherein the controller is configured to:
control the laser displacement sensor to measure the plate thickness of the substrate, which has been thinned by the whetstone, at the carry-out position;
after measuring the plate thickness of the substrate and before thinning another substrate, control the two connectors to adjust the substrate chuck that holds said another substrate based on a plate thickness measurement result of the substrate; and
control the spindle shaft to thin said another substrate while said another substrate is held by the substrate chuck tilted at the adjusted angle.

2. The substrate processing apparatus of claim 1 ,
wherein the controller measures a plate thickness of said another substrate while the controller is performing the thinning of the substrate.

3. The substrate processing apparatus of claim 1 , further comprising:
a nozzle configured to clean the substrate at the carry-out position, and
wherein the controller cleans the substrate before the plate thickness of the substrate is measured by the laser displacement sensor.

4. The substrate processing apparatus of claim 1 , further comprising:
a motor configured to move the laser displacement sensor between a measurement position where the laser displacement sensor measures the plate thickness of the substrate and a measurement standby position where the laser displacement sensor stands by to avoid a cleaning liquid configured to clean the substrate.

5. The substrate processing apparatus of claim 1 ,
wherein the controller does not correct a setting of the tilt angle but maintains the setting thereof when a measurement value of the plate thickness of the substrate falls within a tolerance range.

6. The substrate processing apparatus of claim 1 ,
wherein the substrate chuck is moved to the carry-out position from an m th (m is a natural number equal to or larger than 1) processing position,
the laser displacement sensor measures, at the multiple points of the substrate in the diametrical direction thereof, the plate thickness of the substrate immediately after being thinned at the m th processing position, and
the controller corrects a setting of the tilt angle at the m th processing position based on a measurement result of the laser displacement sensor.

7. The substrate processing apparatus of claim 1 ,
wherein the substrate chuck is moved to the carry-out position from an n th (n is a natural number equal to or larger than 2) processing position,
the laser displacement sensor measures, at the multiple points of the substrate in the diametrical direction thereof, the plate thickness of the substrate thinned at the n th processing position, and
the controller corrects a setting of the tilt angle at the n th processing position based on a measurement result of the laser displacement sensor, and does not correct but maintains settings of the tilt angle at a first processing position to a (n−1) th processing position.

8. The substrate processing apparatus of claim 1 ,
wherein the substrate chuck is moved to the carry-out position from an m th (m is a natural number equal to or larger than 1) processing position,
the laser displacement sensor measures, at the multiple points of the substrate in the diametrical direction thereof, the plate thickness of the substrate immediately after the thinning at the m th processing position is ceased, and
the controller corrects a setting of the tilt angle at a time when the thinning once ceased at the m th processing position is resumed.

9. The substrate processing apparatus of claim 1 ,
wherein the carry-in position and the carry-out position are identical.

10. A substrate processing method performed by the substrate processing apparatus of claim 1 , the substrate processing method comprising:
moving, by the rotary table, each of multiple substrate chucks to, in sequence, the carry-in position where the carry-in of a substrate is performed, the processing position where thinning of the substrate is performed, and the carry-out position where a carry-out of the substrate is performed;
adjusting, by the two connectors, the tilt angle of the substrate chuck with respect to the rotary table at the processing position;
thinning, by the whetstone, the substrate at the processing position;
measuring, by the laser displacement sensor, at multiple points of the substrate in the diametrical direction thereof, the plate thickness of the substrate thinned at the processing position; and
correcting, by the controller, a setting of the tilt angle at the processing position based on the measurement result of the measuring of the plate thickness of the substrate,
wherein the measuring of the plate thickness of the substrate is performed at the carry-out position, and
wherein the substrate processing method further comprises:
after measuring the plate thickness of the substrate and before thinning another substrate, adjusting the substrate chuck that holds said another substrate based on a plate thickness measurement result of the substrate; and
thinning said another substrate while said another substrate is held by the substrate chuck tilted at the adjusted angle.

11. The substrate processing method of claim 10 ,
wherein the measuring of the plate thickness of the substrate at the carry-out position is performed while thinning another substrate at the processing position.

12. The substrate processing method of claim 10 , further comprising:
cleaning the substrate at the carry-out position before the measuring of the plate thickness of the substrate at the carry-out position.

13. The substrate processing method of claim 10 , further comprising:
moving the laser displacement sensor configured to measure the plate thickness of the substrate between a measurement position where the laser displacement sensor measures the plate thickness of the substrate and a measurement standby position where the laser displacement sensor stands by to avoid a cleaning liquid configured to clean the substrate.

14. The substrate processing method of claim 10 ,
wherein the setting of the tilt angle is maintained without being corrected when a measurement value of the plate thickness of the substrate falls within a tolerance range.

15. The substrate processing method of claim 10 ,
wherein the substrate chuck is moved to the carry-out position from an m th (m is a natural number equal to or larger than 1) processing position,
in the measuring

Assignees

• Tokyo Electron Ltd

Inventors

• Fukunaga Nobutaka
• Yarimitsu Masakazu
• Fujii Katsuhisa
• Ryu Hidejiro

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/78

  using vacuum or suction, e.g. Bernoulli chucks · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title