Substrate processing apparatus, substrate processing method, and chemical liquid

Patent metadata

Field	Value
Publication number	US-12371796-B2
Application number	US-202217973799-A
Country	US
Kind code	B2
Filing date	Oct 26, 2022
Priority date	Jan 23, 2020
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

A substrate processing method includes: supplying a first processing liquid containing a chelating agent and a solvent from a first tank toward a substrate having a film of a metal formed on a surface thereof to generate a complex containing the metal and the chelating agent while rotating the substrate; and supplying a second processing liquid containing water toward the substrate to dissolve the complex in the second processing liquid while rotating the substrate, after the complex is generated.

First claim

What is claimed is:

1. A substrate processing method comprising:
supplying a first processing liquid containing a chelating agent and a solvent from a first tank toward a substrate having a film of a metal formed on a surface thereof to generate a complex containing the metal and the chelating agent while rotating the substrate; and
supplying a second processing liquid containing water and oxygen toward the substrate to dissolve the complex in the second processing liquid while rotating the substrate, after the complex is generated,
wherein a concentration of the oxygen is controlled by a controller.

2. The substrate processing method according to claim 1 , wherein the supplying the second processing liquid includes stopping the supply of the second processing liquid when a liquid film of the second processing liquid is formed on an entire surface of the substrate.

3. The substrate processing method according to claim 1 , wherein the supplying the first processing liquid and the supplying the second processing liquid are repeated.

4. The substrate processing method according to claim 1 , further comprising:
supplying a third processing liquid that is water soluble toward the substrate to remove the chelating agent remaining on the substrate after the complex is generated and before the second processing liquid is supplied.

5. The substrate processing method according to claim 1 , wherein a temperature of the second processing liquid is controlled to 25° C. or less.

6. The substrate processing method according to claim 1 , further comprising:
supplying a fourth processing liquid capable of removing a foreign substance adhering to a surface of the film of the metal toward the substrate while rotating the substrate before the first processing liquid is supplied.

7. The substrate processing method according to claim 1 , further comprising:
continuously rotating the substrate to dry the surface of the substrate after the second processing liquid is supplied.

8. The substrate processing method according to claim 1 , wherein
the first processing liquid and the second processing liquid are supplied alternately for a first number of times, respectively, while rotating the substrate,
after the alternate supplying of the first processing liquid and the second processing liquid, a first drying is performed on the surface of the substrate while continuing the rotation of the substrate, and
the alternate supplying and the first drying are repeated for a second number of times.

9. The substrate processing method according to claim 8 , wherein the first number of times of the alternate supplying is reduced as the number of the alternate supplying and the first drying increases.

10. The substrate processing method according to claim 1 , wherein the first processing liquid further includes water and a content of water is 10 mass % or less.

11. The substrate processing method according to claim 1 , wherein the metal includes one or more selected from a group consisting of Cu, Co, Ru, Mo, and TiN,
the chelating agent contains an organic acid containing at least one selected from a group consisting of a carbonyl group, a carboxyl group, and an amine group, and
the solvent contains one or more selected from a group consisting of isopropyl alcohol, acetone, N-methyl-2-pyrrolidone, and tetrahydrofuran.

Assignees

• Tokyo Electron Ltd

Inventors

• Sakazaki Tetsuya
• Kosugi Hitoshi

Classifications

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0422 Primary

  for wet etching · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P50/667

  by liquid etching only · CPC title