Display device and method of manufacturing the display device

Patent metadata

Field	Value
Publication number	US-12369463-B2
Application number	US-202217690129-A
Country	US
Kind code	B2
Filing date	Mar 9, 2022
Priority date	Jul 26, 2021
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

A display device includes: a substrate including a display area including a first pixel area, a component area adjacent to the display area, and a non-display area adjacent to the display area, where the component area includes a second pixel area and a transmission area, and the non-display area includes a bending area; a first inorganic layer continuously arranged in the transmission area on the substrate, where a lower opening overlapping the bending area is defined through the first inorganic layer; a blocking layer on the first inorganic layer, a blocking layer opening overlapping the transmission area and an intermediate opening overlapping the lower opening are defined through the blocking layer; and a display element layer on the blocking layer, where the display element layer includes a first display element overlapping the first pixel area and a second display element overlapping the second pixel area.

First claim

What is claimed is:

1. A display device comprising:
a substrate comprising a display area including a first pixel area, a component area adjacent to the display area, and a non-display area adjacent to the display area, wherein the component area includes a second pixel area and a transmission area, and the non-display area includes a bending area;
a first inorganic layer continuously arranged in the transmission area on the substrate, wherein a lower opening overlapping the bending area of the non-display area is defined through the first inorganic layer;
a blocking layer on the first inorganic layer, wherein the blocking layer overlaps the display area, the component area and the bending area, a blocking layer opening overlapping the transmission area, and an intermediate opening overlapping the lower opening are defined through the blocking layer; and
a display element layer on the blocking layer, wherein the display element layer comprises a first display element overlapping the first pixel area, and a second display element overlapping the second pixel area.

2. The display device of claim 1 , wherein the blocking layer comprises amorphous silicon.

3. The display device of claim 1 , wherein a thickness of the first inorganic layer overlapping the transmission area is less than a thickness of the first inorganic layer overlapping the second pixel area.

4. The display device of claim 1 , further comprising:
a pixel circuit layer between the blocking layer and the display element layer, wherein the pixel circuit layer comprises:
a first semiconductor layer on the blocking layer, wherein the first semiconductor layer comprises a silicon semiconductor;
a first inorganic insulating layer on the first semiconductor layer, wherein a first insulating layer opening overlapping the blocking layer opening is defined through the first inorganic insulating layer;
a second semiconductor layer on the first inorganic insulating layer, wherein the second semiconductor layer comprises an oxide semiconductor; and
a second inorganic insulating layer on the second semiconductor layer, wherein a second insulating layer opening overlapping the blocking layer opening is defined through the second inorganic insulating layer.

5. The display device of claim 4 , wherein
the pixel circuit layer further comprises a semiconductor pattern between the blocking layer and the first inorganic insulating layer and overlapping the transmission area, and
the semiconductor pattern and the first semiconductor layer comprise a same material as each other.

6. The display device of claim 4 , wherein
the pixel circuit layer further comprises a semiconductor pattern between the first inorganic insulating layer and the second inorganic insulating layer and overlapping the transmission area, and
the semiconductor pattern and the second semiconductor layer comprise a same material as each other.

7. The display device of claim 4 , wherein
the second insulating layer opening comprises an upper insulating layer opening and a lower insulating layer opening closer to the first inorganic layer than the upper insulating layer opening, and
a size of the upper insulating layer opening is less than a size of the lower insulating layer opening.

8. The display device of claim 1 , further comprising:
a pixel circuit layer between the blocking layer and the display element layer, wherein the pixel circuit layer comprises:
a first metal layer overlapping the first pixel area and having a first thickness;
a second metal layer overlapping the second pixel area and having a second thickness which is different from the first thickness;
a lower blocking layer under the second metal layer; and
a second inorganic layer through which an inorganic layer opening overlapping the transmission area is defined,

wherein one of the first metal layer and the second metal layer is between the blocking layer and the second inorganic layer, and
the other of the first metal layer and the second metal layer is on the second inorganic layer.

9. The display device of claim 8 , wherein
the first metal layer is on the second inorganic layer,
the second metal layer is between the blocking layer and the second inorganic layer, and
the lower blocking layer and the blocking layer are provided as a single unitary body.

10. The display device of claim 9 , wherein
the pixel circuit layer further comprises a lower inorganic layer between the lower blocking layer and the second metal layer, wherein a lower inorganic layer opening overlapping the transmission area is defined through the lower inorganic layer, and
the lower inorganic layer is between the blocking layer and the second inorganic layer in the first pixel area.

11. The display device of claim 1 , further comprising:
a component overlapping the component area.

Assignees

• Samsung Display Co Ltd

Inventors

• Bae Subin
• Jung Dawoon
• Jeong Yugwang
• Cho Sungwon
• Cha Myounggeun
• Choi Sanggun

Classifications

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K59/65

  OLEDs integrated with inorganic image sensors · CPC title

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/471

  having different architectures, e.g. having both top-gate and bottom-gate TFTs · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title