Method for laser drilling process for an integrated circuit package

Patent metadata

Field	Value
Publication number	US-12368053-B2
Application number	US-202217661940-A
Country	US
Kind code	B2
Filing date	May 4, 2022
Priority date	Jan 6, 2022
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

A method includes forming an insulating layer over a package. The package has a plurality of locations where openings are subsequently formed. A first laser shot is performed, location by location, on each of the locations across the package. A first laser spot of the first laser shot overlaps with each of the locations. The first laser shot removes a first portion of the insulating layer below the first laser spot. Another laser shot is performed, location by location, on each of the locations across the package. Another laser spot of the another laser shot overlaps with each of the locations. The another laser shot removes another portion of the insulating layer below the another laser spot. Performing the another laser shot, location by location, on each of the locations across the package is repeated multiple times, until desired portions of the insulating layer are removed.

First claim

What is claimed is:

1. A method comprising:
forming an insulating layer over a package, wherein the package has a plurality of locations where openings are subsequently formed;
performing a first laser shot, location by location, on each of the locations across the package, wherein a first laser spot of the first laser shot overlaps with each of the locations, and wherein the first laser shot removes a first portion of the insulating layer below the first laser spot;
performing another laser shot, location by location, on each of the locations across the package, wherein another laser spot of the another laser shot overlaps with each of the locations, and wherein the another laser shot removes another portion of the insulating layer below the another laser spot; and
repeating performing the another laser shot, location by location, on each of the locations across the package multiple times, until desired portions of the insulating layer are removed.

2. The method of claim 1 , wherein the first laser spot fully overlaps with the another laser spot.

3. The method of claim 1 , wherein the first laser spot partially overlaps with the another laser spot.

4. The method of claim 1 , wherein the package comprises a plurality of pads in the plurality of locations.

5. The method of claim 4 , wherein the first laser spot overlaps with each of the pads.

6. The method of claim 4 , wherein the another laser spot overlaps with each of the pads.

7. The method of claim 4 , wherein each of the openings exposes a respective pad.

8. A method comprising:
forming a package, the package comprising pads and an insulating layer over the pads; and
performing laser sequences on the package to form openings in the insulating layer, each of the openings exposing a respective pad, wherein the performing the laser sequences comprises:
performing a first laser sequence on the package, wherein performing the first laser sequence comprises performing a first laser shot on the insulating layer over each of the pads consecutively, wherein a first laser spot of the first laser shot overlaps with each of the pads in a plan view, and wherein the first laser shot removes a first portion of the insulating layer below the first laser spot; and
after performing the first laser sequence, performing subsequent laser sequences on the package, wherein performing each of the subsequent laser sequences comprises performing a subsequent laser shot on the insulating layer over each of the pads consecutively, wherein a subsequent laser spot of the subsequent laser shot overlaps with each of the pads in the plan view, wherein the subsequent laser spot of the subsequent laser shot overlaps with a previous laser spot of a previous laser shot, and wherein the subsequent laser shot removes a subsequent portion of the insulating layer below the subsequent laser spot.

9. The method of claim 8 , wherein the subsequent laser spot of the subsequent laser shot fully overlaps with the previous laser spot of the previous laser shot in a plan view.

10. The method of claim 8 , wherein the subsequent laser spot of the subsequent laser shot and the previous laser spot of the previous laser shot only partially overlaps each other in a plan view.

11. The method of claim 8 , wherein an edge of the first laser spot coincides with an edge of each of the pads in the plan view.

12. The method of claim 8 , wherein an edge of the subsequent laser spot coincides with an edge of each of the pads in the plan view.

13. The method of claim 8 , wherein the openings have sloped sidewalls.

14. The method of claim 8 , wherein the first laser spot and all of the subsequent laser spots cover an area of each of the openings in the plan view.

15. A method comprising:
forming a redistribution structure, the redistribution structure comprising pads and an insulating layer over the pads; and
patterning the insulating layer to form openings in the insulating layer, each of the openings exposing a respective pad, wherein the patterning the insulating layer comprises:
performing a first laser sequence on the insulating layer, wherein performing the first laser sequence comprises performing first laser shots on first locations of the insulating layer, wherein each first location overlaps with a respective pad in a plan view, and wherein each first laser shot removes a first portion of the insulating layer from a respective first location; and
after performing the first laser sequence, performing a plurality of subsequent laser sequences on the insulating layer, wherein performing each subsequent laser sequence comprises performing subsequent laser shots on subsequent locations of the insulating layer, wherein each subsequent location overlaps with a respective pad in the plan view, wherein each subsequent laser shot removes a subsequent portion of the insulating layer from a respective subsequent location, and wherein each subsequent location partially overlaps with a respective previous location of a previous laser sequence in the plan view.

16. The method of claim 15 , wherein the first locations are same as the subsequent locations.

17. The method of claim 15 , wherein the first locations are different from the subsequent locations.

18. The method of claim 15 , wherein each of the openings has sloped sidewalls.

19. The method of claim 15 , further comprising forming conductive connectors in the openings.

20. The method of claim 19 , wherein top portions of the conductive connectors are below a top surface of the insulating layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Cheng Chia-Shen
• Chang Chia-Lun
• Pei Hao-Jan
• Lin Hsiu-Jen
• Hsieh Ching-Hua

Classifications

• H10W90/722

  between stacked chips · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W72/851

  Dispositions of multiple connectors or interconnections · CPC title