Photonics optoelectrical system

Patent metadata

Field	Value
Publication number	US-12366705-B2
Application number	US-202318151900-A
Country	US
Kind code	B2
Filing date	Jan 9, 2023
Priority date	Nov 21, 2018
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

There is set forth herein a method including building a first photonics structure using, wherein the building the first photonics structure includes fabricating one or more photonics device.

First claim

What is claimed is:

1. An optoelectrical system, comprising:
a first photonics structure having a first photonics dielectric stack;
a second photonics structure having a second photonics dielectric stack;
one or more metallization layers integrally formed in the first photonics dielectric stack;
one or more first photonics devices integrally formed in the first photonics dielectric stack;
at least one metallization layer integrally formed in the second photonics dielectric stack;
at least one second photonics device integrally formed in the second photonics dielectric stack;
one or more laser stack structures formed in the second photonics dielectric stack, each laser stack structure including a buffer structure, and each laser stack structure having a bottom contact structure thereof; and
an extended dielectric stack region of the second photonics dielectric stack including a contact extending therethrough to contact at least one bottom contact structure of a laser stack structure, and the extended dielectric stack region further including a termination in electrical communication with the contact.

2. The system of claim 1 , comprising:
a first waveguide integrally formed in the second photonics dielectric stack, the waveguide being edge coupled to an active region of a laser stack structure of the one or more laser stack structures integrally formed in the second photonics dielectric stack;
a monocrystalline waveguide integrally fabricated within the first photonics dielectric stack; and
a plurality of intermediary waveguides configured to evanescently couple light from the first waveguide to the monocrystalline waveguide.

3. The system of claim 1 , wherein the one or more first photonics devices includes at least one waveguide, and wherein the at least one second photonics device includes at least one waveguide.

4. The system of claim 1 , wherein the buffer structure is includes a layer of Ge.

5. The system of claim 4 , wherein the buffer structure includes a layer of GaAs.

6. The system of claim 5 , wherein the buffer structure is epitaxially grown.

7. The system of claim 1 , wherein each of the one or more laser stack structures includes plurality of buffer structures.

8. The system of claim 1 , wherein the buffer structure is comprised of one or more III-V material.

9. An optoelectrical system, comprising:
a first photonics structure having a first photonics dielectric stack;
a second photonics structure having a second photonics dielectric stack;
a bond layer that fusion bonds the first photonics structure to the second photonics structure;
one or more first metallization layers integrally formed in the first photonics dielectric stack;
at least one second metallization layer integrally formed in the second photonics dielectric stack;
one or more first photonics device integrally formed in the first photonics dielectric stack;
at least one second photonics device integrally formed in the second photonics dielectric stack;
one or more laser stack structures formed in the second photonics dielectric stack, each laser stack structure including a buffer structure, and each laser stack structure having a bottom contact structure thereof;
an extended dielectric stack region of the second photonics dielectric stack including a contact extending therethrough to contact at least one bottom contact structure of a laser stack structure, and the extended dielectric stack region further including a termination in electrical communication with the contact; and
a waveguide integrally formed in the second photonics dielectric stack, the waveguide being edge-coupled to one of the one or more laser stack structures.

10. The system of claim 9 , wherein the buffer structure is includes a layer of Ge.

11. The system of claim 9 , comprising:
a first waveguide integrally formed in the second photonics dielectric stack, the waveguide being edge coupled to an active region of a laser stack structure of the one or more laser stack structures integrally formed in the second photonics dielectric stack;
a monocrystalline waveguide integrally fabricated within the first photonics dielectric stack; and
a plurality of intermediary waveguides configured to evanescently couple light from the first waveguide, through the bond layer, to the monocrystalline waveguide.

12. An optoelectrical system, comprising:
a first photonics structure having a first photonics dielectric stack;
a second photonics structure having a second photonics dielectric stack;
one or more metallization layers integrally formed in the first photonics dielectric stack;
one or more first photonics devices integrally formed in the first photonics dielectric stack;
at least one metallization layer integrally formed in the second photonics dielectric stack;
at least one second photonics device integrally formed in the second photonics dielectric stack;
one or more laser stack structures formed in the second photonics dielectric stack, each laser stack structure having a bottom contact structure thereof; and
an extended dielectric stack region of the second photonics dielectric stack including a contact extending therethrough to contact at least one bottom contact structure of a laser stack structure, and the extended dielectric stack region further including a termination in electrical communication with the contact.

13. The system of claim 12 , each laser stack structure including at least one light-confining structure.

14. The system of claim 13 , wherein the light-confining structure is epitaxially grown.

15. The system of claim 13 , wherein the one or more laser stack structures further include a buffer structure, a contact structure on the buffer structure, and wherein the light-confining structure is on the contact structure.

16. The system of claim 15 , where the one or more laser stack structures further includes an active region on a first light-confining structure, a mode selection structure on the active region, and a second light-confining on the mode selection structure.

17. The system of claim 13 , wherein the light-confining structure is at least one cladding structure.

18. The system of claim 13 , wherein the light-confining structure is n-doped and comprised of AlGaAs, GaInP or a combination thereof.

19. The system of claim 12 , comprising:
a first waveguide integrally formed in the second photonics dielectric stack, the waveguide being edge coupled to an active region of a laser stack structure of the one or more laser stack structures integrally formed in the second photonics dielectric stack;
a monocrystalline waveguide integrally fabricated within the first photonics dielectric stack; and
a plurality of intermediary waveguides configured to evanescently couple light from the first waveguide to the monocrystalline waveguide.

20. The system of claim 12 , wherein the one or more laser stack structures further include a buffer structure.

Assignees

• Univ New York State Res Found
• The Res Foundation For The State Univeristy Of Newyork

Inventors

• Charles William
• Coolbaugh Douglas
• La Tulipe Douglas
• Leake Jr Gerald L

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/942

  relative to underlying supporting features, e.g. bond pads, RDLs or vias · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title